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3012201112RESEARCHANDEXPLORATIONINLABORATORYVol.30No.12Dec.2011Multisim100084。N2N5486EDAMultisim。MultisimTN702A1006-7167201112-0130-04AnalysisandDesignofAmplifierofFieldEffectTransistorBasedonMultisimCHENLi-pingRENYan-pinHOUSu-fangAutomationDepartmentofTsinghuaUniversityBeijing100084ChinaAbstractFollowingtheintroductionofFieldEffectTransistorFETintheoreticalcourseexperimentsofFETandFET-basedamplifierhavebeenaddedtorelevantpraticalcourse.TakingtheN-channeljunctionFET2N5486foraninstanceamethodofdesignandsimulationforFETcharacteristiccurveandcommon-drainamplifierisintroducedinthispaper.AlltheworkisbasedonMutltisimoneoftheEDAtools.KeywordsfieldeffecttransistoramplifierMultisim2011-02-151974-。Tel.010-62771932E-mailchenlp@tsinghua.edu.cn0FieldEffectTransistor2060、、。1。。、、。。NEDAMultisim。1Multisim2N5486。。1。。iDUGS。UGS、UDSiD2。UGSoff、IDSS。。12MultisimMultisimIVIV-AnalysisDCSweepAnalysis。“”。。。IV。1VDD8V。MultisimVDDVDDVDDNID。ID0VV1V1ID。1iD=fu()DSUGS=3Simulate→Analyses→DCSweepUDSvddvddUGSvv20~10V-5~0V2V1Iv13。Simulate4。。iD=fu()GSUDS=3Simulate→Analyses→DCSweepUGSvv2-5~0V54V1Iv13。Simulate6。22345613130。N2N54867Rg1Rg2VDD3。0Rg30UA。IDQ≈2mAUGDQ<-4V。Rg1Rg2Rg1=220kΩ、Rg2=440kΩ。Rg31MΩ3。RS。Simulate→Analyses→ParameterSweepRS2~5kΩ8。VDDSimulate1。RS3.2kΩ。71RS/kΩIDQ/mA3.0-2.127143.1-2.066113.2-2.008893.3-1.955483.4-1.90398。DCOperatingPoint。Simulate→Analyses→DCOperatingPointOutputvariables11、99、1010VDD。Simulate9。Rg309A10。。893TransientAnalysis。Simulate→Analyses→TransitAnalysis。10kHz0~0.0005sOutputvariables55、44。Simulate10。Show/HideCursorsAu。。4。、、。EDA。。23112Multisim10。Multisim。5、、。EDA5。EDA。References1.C//.200979-8086.2.M.2004.3.M.2006.4.PSpiceJ.2007241091-95.5.EDAJ.2008251092-93、114.6.《》J.200515732-34.7.《》J.200414715-17.8.M.2006.9.M.2009.10.M.2006.11.MultisimJ.2009286213-214.12.Multisim10J.200928424-27.13.MultisimJ.2003748-49.14.MultisimmatlabJ.200728448-50.15.Multisim“”J.201032560-61檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿檿67.1132.《》J.2008187113-115118.3.M.1999.4.“”J.20072612370-372.5.J.2004342-44.6.J.2008278119-122.7.J.201018129-130.8.J.200716646-49.9.M.2004.10.M.2005.11.M.2005.12.J.201027836-38.13.J.2006151-5371.14.MCGSPIDJ.200814350-53.15.J.200524131-33.331
本文标题:基于Multisim的场效应管放大电路分析与设计-陈莉平
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