创新的玻璃辅助二氧化碳雷射对矽的加工技术

1/17–MiNaMaterialandMachiningLab–創新的玻璃輔助二氧化碳雷射對矽的加工技術指導教授：鍾震桂副教授報告人:蕭恩柔作者：林士隆、蕭恩柔、吳孟諭國立成功大學機械學系暨研究所研究生GraduateStudent,Dep’tofMechanicalEngineering,NCKUTel:06-2757575ext.62159-10,E-mail:[e-mail]2/17SiliconhavebeenwidelyusedintheapplicationofICChip,solarenergyopto-electronics,etc…ICChipSiIndustryandProductsSolarCellSiliconWafer3/17Application:wafercodename,batchnumber,thetypeoftheproducts,trademark,madedate.SiIndustryandProducts4/17ApplicationinourLife3CProducts5/17WearTraditionalSiliconCuttingandMarkingDisadvantage:1.Fractureedgeatrandom2.Powderandchip3.Apttoinjurehands4.Noteasytocontrol6/17CommercialSiliconCuttingbyDiamondWheelDisadvantage:1.Fractureedgeatrandom2.Powderandchip3.Unabletocutspecialform4.Diamondwheelwear5.Needusingwaterandtape7/17Nd:YAGLaserExcimerLaserFemtosecondLaserDisadvantage:1.Expensive2.NeedmaskCuttingofthinsiliconwaferCommercialSiliconCuttingbyShortWavelengthLaserNoCO2laserforSietching/drilling/cutting8/17專利名稱:避免產生潑濺碎片之晶圓標號製作方法專利公告號:359885專利公告日期:2005.5.27申請人名稱:台灣積體電路製造股份有限公司PatentMethodofSiWaferMarking9/17OurNovelApproachforSiMicromachiningLaserDrillingLaserEtchingPatentpending10passes40passes10/17HeartSharpCuttingExperimentaldataPower:30WSpeed:5.715(mm/sec)Pass:20Inambientair“Heart”typecuttingSiliconwaferGlassCO2LaserSiliconwaferGlassCO2LaserSiliconwaferGlassCO2Laser(1)(2)(3)SiliconwaferGlassCO2Laser(4)11/17CuttingofSiWaferExperimentaldataPower:30WSpeed:5.715(mm/sec)Pass:20Inambientair4”SiliconwafercuttingPatentpending12/17SiMarkingbyCO2LaserExperimentdataPower:21WSpeed:5(mm/sec)Pass:1Inambientair“NCKU”marking(a)(b)Patentpending13/17創意歷程創意歷程:作者創意源起於CO2雷射對矽晶圓與玻璃的接合技術。優缺點:優點:快速、便宜、低成本、低能量功率、不需光罩輔助，就可完成矽晶圓切割、加工與刻印等目的。沒有傳統鑽石輪刀刀具磨損和晶片易破裂問題，也不需昂貴的短波長Nd:YAG或UV-laser等設備。缺點:接合的密緊度與加工的品質有很大的關係。100um左右，若要更小必須更換雷射鏡組。14/17Hightechnologyindustry：IC,Microelectronics,Package,Solarenergyopto-electronics,OptoelectronicandMEMSdevices...InterestofIndustry:台積電、日月光、力晶、茂迪、旗勝、益通、聯電、茂德、南科、華邦電、飛信、景碩等。ApplicationMarket15/171.ThewavelengthofCO2laseris10.64umandnotabsorbedbysiliconmaterial.weputasilicononthetopoftheglassmaterialormetal-coatedsubstrate,CO2lasercancutormarkthesiliconwafer.2.IncomparisonwithconventionalNd:YAGorexcimerlaserordiamondwheelforsiliconcutting,CO2lasermachinedSitechnologyisaeasy,fast,lowcost,lowpower,nopowderandchip,nonecessaryphotolithographyandmask3.Sicutting/drilling:OtherCO2LaserProcessingCuta4”Siwaferhasbeensuccessfuldemonstrated.EtchthroughSiwafertobeaholepatternandaheart-shapedhollow.4.Wecouldmarkontoporbacksideofsiliconwafer.Summary16/17LaserRelatedPatentList鍾震桂、林育全，“切割脆性材料之方法及裝置”，台灣發明第250911號，2006/03-2024/12。CKChung,andYCLin,“Methodandapparatusformachiningabrittlematerial”,TW250911,2006/03-2024/12.鍾震桂、吳孟諭、蕭恩柔，“加工硬脆材料之方法”審查中CKChung,MYWuandEJHsiao,“Methodformachiningabrittlematerial”,patentfiled.鍾震桂、吳孟諭、宋雲傑，“矽晶圓之切割和加工方法”審查中CKChung,MYWuandYCSung,“Methodofcuttingandprocessingasiliconwafer”,patentfiled.鍾震桂、吳孟諭、蕭恩柔，“表面上具有標記之矽材料及其形成方法”審查中CKChung,MYWuandEJHsiao,“Siliconmaterialhavingamarkonthesurfacethereofandthemethodformakingthesame”,patentfiled.17/17TheEndThanksforlisteningQuestion&Comment