肖特基二极管-5819

SOD-123Plastic-EncapsulateDiodes5817W-5819WSCHOTTKYBARRIERDIODEFEATURESForuseinlowvoltage,highfrequencyinvertersFreewheeling,andpolarityprotectionapplications.MARKING:5817W:SJ5818W:SK5819W:SLMaximumRatingsandElectricalCharacteristics,SingleDiode@Ta=25℃ParameterSymbol5817W5818W5819WUnitNon-RepetitivePeakReverseVoltageVRM203040VPeakRepetitivePeakReverseVoltageWorkingPeakReverseVoltageDCBlockingVoltageVRRMVRWMVR203040VRMSReverseVoltageVR(RMS)142128VAverageRectifiedOutputCurrentIO1APeakForwardSurgeCurrent@t=8.3msIFSM9ARepetitivePeakForwardCurrentIFRM1.5APowerDissipationPd500mWThermalResistanceJunctiontoAmbientRθJA250StorageTemperatureTSTG-55~+150℃ELECTRICALCHARACTERISTICS(Ta=25℃unlessotherwisespecified)ParameterSymbolTestconditionsMinMaxUnitReversebreakdownvoltageV(BR)IR=1mA5817W5818W5819W203040VReversevoltageleakagecurrentIRVR=20V5817WVR=30V5818WVR=40V5819W1mA5817WIF=1AIF=3A0.450.75V5818WIF=1AIF=3A0.550.875VForwardvoltageVF5819WIF=1AIF=3A0.60.9VDiodecapacitanceCDVR=4V,f=1MHz120pFSOD-123℃/WPage1of311/5/20110.1110101001000025507510012515001002003004005006000.00.40.81.21.62.00.11100102030401E-30.010.1110Ta=25℃f=1MHzCapacitanceCharacteristicsREVERSEVOLTAGEVR(V)CAPACITANCEBETWEENTERMINALSCT(pF)20PowerDeratingCurvePOWERDISSIPATIONPD(mW)AMBIENTTEMPERATURETa()℃ForwardCharacteristicsTa=100℃Ta=25℃FORWARDCURRENTIF(A)FORWARDVOLTAGEVF(V)TypicalCharacteristicsReverseCharacteristics5819WTa=100℃Ta=25℃REVERSECURRENTIR(mA)REVERSEVOLTAGEVR(V)1Page2of311/5/2011PACKAGEOUTLINEPlasticsurfacemountedpackage;2leadsSOD-123Page3of311/5/2011