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分类号:____________密级:______________UDC:____________单位代码:______________北京科技大学硕士学位论文论文题目:指导教师:单位:指导小组成员:单位:单位:论文提交日期:2014年12月25日学位授予单位:北京科技大学北京科技大学掺杂对SrTiO3电子结构及光催化性质的理论研究公开10008O411.353北京科技大学硕士学位论文--III摘要目前,全球范围内能源短缺以及环境污染问题日益突出,寻找新型清洁且可再生的能源是解决这两大问题的有效途径。而太阳能具有廉价、清洁、可再生等优点,因此,高效快捷地利用、转化和存储太阳能是人们一直努力的目标。半导体光催化技术正是太阳能高效利用的一种重要途径,在解决能源和生态环境问题方面有着重要的前景。SrTiO3是一种传统的光催化材料,具有在紫外线照射下催化性能稳定以及良好的电子-空穴分离和输运等特性。其最主要缺点是带隙较宽(3.25eV),只能吸收太阳光的紫外部分,而紫外光在太阳光谱中不到4%,对太阳能利用率较低。正是由于这方面的劣势,使得SrTiO3不能被广泛地利用。为了提高SrTiO3光催化材料的光催化性能和太阳能的利用率,对其改性来抑制光生载流子复合、拓宽光响应范围是非常有必要的。本文主要探究了掺杂改性对SrTiO3光催化材料的影响。本文基于密度泛函理论的第一性原理方法,第一部分探究不同N掺杂浓度对SrTiO3的缺陷形成能、晶体结构、电子以及光学性质的影响。研究结果表明随着N掺杂浓度的增加,缺陷形成能越来越大,这表明实验制备高掺杂样品越来越困难。N掺杂后,N的2p电子态与O的2p电子态形成杂化轨道能级,杂化轨道能级的位置取决于掺杂N的浓度,在较低的N掺杂浓度内,掺杂量越大,杂化轨道能级越高,带隙越小,可见光效应越明显,当达到某一值时带隙很难进一步减小,这表明N掺杂浓度有一个最佳值。由于N掺杂不能使SrTiO3的光吸收边发生显著红移,故本文在第二部分主要研究了N与过渡金属元素(V、Nb)共掺杂对SrTiO3的影响,研究表明N-V(Nb)共掺杂SrTiO3能使其基本吸收带边发生明显的红移,在禁带中形成浅受主能级和浅施主能级,从而使得光生电子-空穴对能有效地分离。共掺杂体系仍然有合适的边带关系,不仅可以有效地吸收可见光,而且有较强的氧化还原性,对SrTiO3光催化活性是非常有利的。同时也比较了N-V和N-Nb共掺杂体系,结果显示N-V共掺杂体系的带隙比N-Nb共掺杂体系的带隙小,因此N-V共掺杂效果更好。关键词:SrTiO3,光催化,掺杂,第一性原理,电子结构北京科技大学硕士学位论文--VTheoreticalstudyofelectronicstructuresandphotocatalyticpropertiesofdopedSrTiO3AbstractInrecentyears,duetotheglobalenergyshortageandenvironmentpollutionproblemincreasinglyprominent,thesearchfornewcleanandrenewableenergyisaneffectivemeantosolvethetwoproblems.Solarenergyischeap,clean,renewable,therefore,efficientuse,conversionandstorageofsolarenergywillbepursuedallthetime.Semiconductorphotocatalytictechnologyisoneofthemostimportantwaystousethesolarenergyefficiently,whichplaysanimportantroleinsolvingenergyandenvironmentalproblems.SrTiO3isakindoftraditionalphotocatalyticmaterial,hasastablycatalyticperformanceunderultravioletlightandgoodelectron-holeseparationandtransportfeatures.Itsmaindrawbackiswithwiderbandgap(3.25eV)thatonlytheultravioletlightcanbeabsorbed,whichisonlyabout4%ofthesolarenergy.Becauseofthedisadvantage,SrTiO3cannotbewidelyapplied.DopingforeignelementisoneoftheprimarystrategiestoimprovethephotocatalyticperformanceandtheenergyconvertionefficiencyofSrTiO3.Inthispaper,weexploretheeffectofdopingmodificationofSrTiO3photocatalyticmaterials.Thispaperisbasedonthefirst-principlemethodofdensityfunctionaltheory,Inthefirstpart,theeffectsofdifferentN-dopedconcentrationondefectformationenergy,crystalstructureandelectronicandopticalpropertiesofSrTiO3isexplored.TheresultsshowthatthedefectformationenergybecomeshigherwiththeincreasingofNdopingconcentration;thisindicatesthedopingbecomesmoredifficult.DopedwithN,N-2pandO-2pformthehybridorbitalenergylevel,andthepositionoftheenergyleveldependsontheNconcentration.WiththelowerNconcentration,thegreaterthedopingamount,thehighertheenergylevel,thesmallerthebandgap,themorenoticeablethevisiblelighteffect.Asitreachesacertainvalue,thebandgapisdifficulttofurtherreduce,indicatingthatthereisanoptimumvalueofNconcentration.DopedNcannotcausenoticeableredshiftoftheopticalabsorptionedgeofSrTiO3.Thereforeinthesecondpartofthispaper,theeffectofco-dopedNandtransitionmetalelements(V,Nb)onSrTiO3ismainlystudied.ThefindingsshowthatSrTiO3withco-dopedN-V(Nb)cancauseobviousredshiftofthefundamentalabsorptionbandedge,whichformstheshallowacceptorlevelandtheshallowdonorlevelintheforbiddenbandandaccordinglyeffectivelyseparatesphotoelectron-holepairs.Theco-dopedsystemstillhasasuitablesidebandrelationship,whichnotonlycaneffectivelyabsorbvisiblelightbutalsohasstrongoxidationandreduction,thisishighlyadvantageoustothephotocatalyticactivityofSrTiO3.Meanwhile,wealsocomparetheN-VandN-Nbco-dopedSrTiO3,theresultshowsthatbandgapofN-Vco-dopedsystemissmallerthanN-Nbco-dopedSrTiO3,soatotalofN-Vdopingeffectisbetter.KeyWords:SrTiO3,photocatalysis,doping,first-principles,electronicstructures北京科技大学硕士学位论文--VII目录致谢.........................................................................................错误!未定义书签。摘要..........................................................................................................................IIIAbstract.........................................................................................................................V1引言............................................................................................................................12文献综述与选题背景................................................................................................32.1半导体光催化基本原理..................................................................................32.1.1半导体光催化反应过程........................................................................32.1.2影响光催化活性的主要因素................................................................42.1.3光催化材料的改进研究........................................................................62.2SrTiO3光解水进展...........................................................................................82.2.1SrTiO3的基本属性.................................................................................82.2.2SrTiO3的制备现状.................................................................................
本文标题:光催化掺杂第一性原理计算-(绝对经典)
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