PECVD-SiN-薄膜应力的研究

203Vol.20,No.319993CHINESEJOURNALOFSEMICONDUCTORSMar.,1999,1968,,GaAs,1970,,GaAs1997211219,1998202223PECVDSiNx(13050002)(Plasma2enhancedChemicalVaperDeposition,PECVD)SiNx.,...,018110LmPECVDSiNx.PACC:6860,6855,8115H,52901SiNx,,,Na.,.SiNx,.,(CVD)SiNx.(LPCVD),SiNx300nm,300nm,.(PECVD)SiNxLPCVD,.,SiNx.,300nmSiNx.,..,.SiNx.,,.,.,.,.PECVDSiNx,,400,SiNx.,300SiNx..,PECVDSiNx.MHz,kHz.(4MHz);[1]..,,SiNx.,,;,[2],,.,PECVDSiNx:,.HSiöN,..,,SiNx.2,.SMSi23800..S=E(D)26(1-V)RTS.EVDSi,;R;TSiNx,L116C.,Alpha2step200.,5.S,;S,.1PECVD2790SiNx3.Plasma2thermPECVD2790SiNx.1..SiNxSiH4(HeAr10%)NH3.13156MHz.(1).120Pa,20W.100400.68nmömin.(2),.,,48120.SiNx,..,SiH4öNH3,.2.2SiH4öNH3NH310sccm,SiH4,.,120Pa,20W.SiH4öNH3,.,.(3),250,210,20W.4(1)3.,,.,HH[1,2].,.,.,,,,.HH,,.[4],,,,,3120Pa,20W.,,.,,,.,..,PECVDSiNxH.H.,H,2030at%[3].N-HSi-HN-SiN-NSi-Si.H,,,.N-HSi-H,HSiNx,H..,,..,PECVDSiNx,.,.,,.,,5813:PECVDSiNx,,,,,.,,.,,,,,..,SiNx,,.,.(2)4.,,,.4120Pa,20W.SiöNSi-HöN-H.Si,,.,SiH.95%HN[5]..,.:Si,Si-Si,Si(cluster)[6].Si-SiPECVDSiNx,,.(3)5.,,,.,,.,,.,5250,20W.,,,,.[1].(4)HeAr.,,HeSiNxAr.HeAr,:He(4)Ar(40),(10V),He+Ar+.,Ar+,,.,He+68120.,He+,,,.(5):.,100MPa.210,300400.350,2105,018110LmPECVDSiNx,.5,PECVDSiNxSiH4öNH3.SiH4öNH3.;.SiH4öNH3,;,;3,SiH4öNH3,SiNx.PECVDSiNx.[1]W.A.P.Claassen,W.G.J.N.Valkenburg,J.Electrochem.Soc.,1985,132:893903.[2]P.R.Scheeper,Sens.Actuators,1991,B4:7984.[3]G.M.SamuelsonandK.M.Mar,J.Electrochem.Soc.,1985,129:17731778.[4]PeterSinger,Semicond.Internationa,1992,October,5458.[5]D.W.Hess,J.Vac.Sci.Technol.,1984,A2(2):244.[6]S.V.Nguyen,S.Fridmann,J.Electrochem.Soc.,1987,134:2324.StudyonStressofPECVDSiNxFilmZhaoYongjun,WangMinjuan,YangYongjun,LiangChunguang(HebeiSemiconductorResearchInstitute,Shijiazhuang050002)Received19November1997,revisedmanuscriptreceived23February1998AbstractTheusingofPECVDSiNxfilminthefiledofmicroelectronicsandMEMShasbeenbecomingimportantmoreandmore.Thestress,oneoftheimportantcharacter,ofSiNxfilmhasalsobeenpaidmoreattention.Thispaperstudiedtherelationshipbetweenstressandsomedepositionconditions,suchastemperature,pressure,andgasflow,etc.Thecauseofthestressandthemechanismofthestressvariationwiththedepositionconditionswerediscussed.The018110Lmstress2freefilmofPECVDSiNxwasgottenbyadjustingthedepositionconditions.PACC:6860,6855,8115H,52907813:PECVDSiNx