LED-技术教材

ITNBPC1담당/기구设计팀LED技术教材1.LED的理解2.LED使用技术的理解1.有关主要用语介绍2.发光原理3.技术发展展望4.ValueChain别厂家现况5.Patent现况6.色再现方法7.发光效率8.发热关联特性9.Chip制造工程10.Chip效率向上技术11.LEDPackage制造工程12.POBvs.IOLPackage比较13.POBvs.IOLPackage工程比较附件1.LEDChipSize别Package区分附件2.LEDCostTrendChapter1.LED的理解1.有关主要用语介绍(1/2)Epi-WaferChip(LED)LEDPackage(LEDAssembly)LEDArray(LEDPackageAssembly)SubPCBMainPCBBLU(BacklightAssembly)Chip(LED)WirePhosphor+Silicon/EpoxyorSilicon/EpoxyonlyMoldFrameLeadFrameMainPCB(FPCB)SubPCB(FPCB)SubPCB(FPCB)SideViewLED(Package)TopViewLED(Package)PCB焊接方向:TopTopSide光出射方向MainPCB(FR4PCB)LEDValueChain别产品名称LED(Package)结构及名称LED(Package)区分(结构)*Epi:Epitaxy*SMT:SurfaceMountTechnology*FPCB:FlexiblePrintedCircuitBoard*FR4:FlameRetardantType41/401.有关主要用语介绍(2/2)LED(Package)区分(WhiteColor体现方法)3Chip(R,G,B)++400500600700400500600700BlueChip+YellowPhosphorWhiteLED(Package)UVLED(Package)UVChip+3ColorPhosphors400500600700+++WhiteLED(Package)区分(荧光体种类)SilicateLEDYAGLEDRGLEDRGBLED(Package)“主要被使用的LEDType”“Lamp用途”“高色再现型号”“Silicate系列YellowPhosphor”“YAG系列YellowPhosphor”“RGPhosphor”*YAG:YttriumAluminumGarnetWhiteLED(Package)区分(Size)[2812T0.8SideView][3014T1.2TopView][单位mm]2.80.81.2[4014T0.8TopView]3.01.21.4[3020T0.8TopView]3.00.82.0[5630T0.9/1.0TopView2in1Chip]NBPC...3.05.60.94.00.81.42/402.发光原理LEDStructureP-GaNGaNBarrierInGaNWelln-GaNepi-layerUndopedGaNepi-layerGaNBufferlayerSapphiresub.Energy散发(光:25%+热75%)(+)(-)n-GaNp-电极层n-电极层发光层(InGaN)P-GaNLED:LightEmittingDiodeLEDMaterials长处:低消费电力,长寿命,快的相应速度多样的色彩(Band-gapEngineering)把电子能量变换成光能量的半导体原件LED发光原理3/403.技术发展展望HaitzLaw每10年LED的性能成长20倍，性能对比价格下降10倍的理论预想LED厂家间激烈的技术开发及生产性向上，对此的品质向上及价格下降和低消费电力，亲环境,轻量/薄型对应Merit，LCD事业的Main光源来坐落.(cf.CRT→LCDShift现象)4/40日本/美国等领头厂家时通过源头技术的CrossLicense后发厂家的参与牵制.台湾LEDMaker时Wafer在日本进口,EpitaxyGrowth,Chip及Package加工以Main来进行.从专利关联Osram确保WhiteLEDLicense对应特许Nichia诉讼.4.ValueChain别厂家现况LEDValueChain别厂家现况EpitaxyChipLEDPackageTaiwanAETOptpTek,TyntekEverlight,Bright,Lite-on,UnityOptoHarvatek,Lighttek,LightHouseEpistar,Epitek,Forepi,ArimaOptical,TekorCitizen,Stanley,Kagoshima,ToshibaNichia,Toyoda-Gosei,RohmAlti,Luxpia,LumimicroEpiplus,Epivalley,NineXSSC,LGIT,SEMCOOptoway,ItswellJapanKoreaAvagoAXT,GelCore,UniroyalCree,Osram,LumiledsUS/EuropeLEDArrayGrowthProbingFabLappingPolishingScribingBreakingProbingSortingBondingDispensingMoldingTrim/Form(Dicing)TestingTapingPCBLoadSolderPrintMountTesting5/40•LEDPackageMaker2nd利用VendorBiz.•本社内制作化进行中•LGD关联的厂家BizFlowLEDMakerPCBSMTLGIT,SSC,我们LED우수,기주,서킷플렉스ACT,영풍,SIFlexTetra,다솔,UBMDMDFLEX,喜星LGD1996年~:TG-Nichia特许诉讼为首LEDBigMaker间纠纷严重~2002年:5厂家(Nichia-TG-Cree-Osram-Lumileds)间Cross-License签订2002年~:台湾,韩国厂家使用于市场追击的防御手段.LicensingCross-LicensingDisputingofintellectualpropertyrightsOptoTekAsahOsramCreeAdvancedOptoelec.PhilipsSeoulSemi.TwinhillEverlightToyodaGoseiLite-onDominantBisheiRedniomAvagoSamsungElec.HarvatekCitizenElec.NichiaEpistarStanleyElec.KingbrightCotcoRohm5.Patent现况NichiaPatentIssueBriefHistory6/40出处:‘LGD内部资料参考’6.色再现方法MethodCharacteristicsColorRenderingPhosphorMaterialApplicationFairAvailableBackLightingBestUnderDevelopmentWhiteLampGoodNotRequiredDisplaysEfficiencyFairBestGoodSpectrum最近高色再现率Trend的RGLED/RGBLED需要增加NeedsWhiteColor体现方法LED和荧光体的组合或者利用R/G/BLED体现WhiteColor7/40出处:‘LGD内部资料参考’荧光体部的黄色光从InGaNChip蓝色光从荧光体RGBLight7.发光效率LEDPackage发光效率(Pout/Pin)体现能量输入对比光输出的多少的效率，从Chip上发热引起的损失最大+-N-typeEcEvEg-------Ec:conductivebandEv:valenceband:electron:hole-++++++++λ,radiation[λ=hc/Eg]P-type123412345驱动电路效率输入Power(Pin)电流注入效率内部量子效率(电子-电工再组合成功率）光抽取效率(光子的脱离效率)放射效率输入Power(Pout)ChipPackage100%25%20%Package发光效率模式图8/408.发热关联特性LED热特性LED的能量的大部分转换成热(75%)而降低特性，需要热特性的理解及放热对策9/40020406080100120020406080100120140160RelativeLightOutput[%]JunctionTemperature,TJ[oC]REDGREENBLUEWHITEAMBERCYANROYALBLUE-20246-20246-20246JunctionTemperature,TJ[oC]DominantwavelengthShift[nm]BlueRedGreen30405060708090-20246-20246-20246JunctionTemperature,TJ[oC]DominantwavelengthShift[nm]BlueRedGreen30405060708090▶LEDJcTemp.vs.辉度:温度↑,辉度↓▶LEDJctemp.vs.色变化:温度↑,色变化↑▶LEDJcTemp.vs.寿命:温度↑,寿命↓0501001502002503003504004502030405060708090100JunctionTemperature(oC)Current(mA)NaturalcoolingForcedcooling▶LEDCurrentvs.JcTemp:电流↑,JcTemp.↑出处:‘SSC内部教育资料’GrowthTimeBuffer层成长的核心因子-成长温度-厚度-成长速度内部量子效率极大化方案-MQWs(活性层)最佳化-电流扩散层/控制层最佳化(Spreading/Blocking)-p-GaN层最佳化P-GaNGaNBarrierInGaNWelln-GaNepi-layerUndopedGaNepi-layerGaNBufferlayerSapphiresub.H2cleaningGaNbufferlayerUndopedGaN,n-GaNGrowthTemp.InGaN/GaNBulk&MQWs50%0%100%P-GaN,MOCVD设备EpiWafer制造工程Epi是Epitaxy的缩写希腊语Epi(上)+taxis(排列)的合成词Sapphire基板上MOCVD利用设备排列물질을증착배열시켜是制造半导体的工程，内部量子效率极大化时核心技术.9.制造工程(Epi-Wafer)EpiWafer结构*MOCVD:MetalOrganicChemicalVaporDeposition10/40Epi.工程:通过MOCVD的Epi.薄膜成长SubstrateBufferlayern-typeSemi.Multi-QuantumWellp-typeSemi.SubstrateUndoped-GaNn-GaNMQW(Active)p-GaNSubstrateUndoped-GaNn-GaNMQW(Active)SubstrateUndoped-GaNn-GaNSubstrateUndoped-GaNSubstrateActivation(RTA)PhotoDryEtchStripPhotoMetal增贴LiftOffAnnealing(RTA)PhotoMetal增贴LiftOffAnnealing(RTA)PECVD(SiO2增贴)PhotoEtchStripSubstrateUndoped-GaNN-GaNQuantumWellP-GaNSubstrateUndoped-GaNN-GaNQuantumWellP-GaNSubstrateUndoped-G