IRF530N中文资料

PhilipsSemiconductorsProductspecificationN-channelTrenchMOS™transistorIRF530NFEATURESSYMBOLQUICKREFERENCEDATA•’Trench’technology•Lowon-stateresistanceVDSS=100V•Fastswitching•LowthermalresistanceID=17ARDS(ON)≤110mΩGENERALDESCRIPTIONPINNINGSOT78(TO220AB)N-channelenhancementmodePINDESCRIPTIONfield-effectpowertransistorinaplasticenvelopeusing’trench’1gatetechnology.2drainApplications:-•d.c.tod.c.converters3source•switchedmodepowersuppliestabdrainTheIRF530NissuppliedintheSOT78(TO220AB)conventionalleadedpackage.LIMITINGVALUESLimitingvaluesinaccordancewiththeAbsoluteMaximumSystem(IEC134)SYMBOLPARAMETERCONDITIONSMIN.MAX.UNITVDSSDrain-sourcevoltageTj=25˚Cto175˚C-100VVDGRDrain-gatevoltageTj=25˚Cto175˚C;RGS=20kΩ-100VVGSGate-sourcevoltage-±20VIDContinuousdraincurrentTmb=25˚C;VGS=10V-17ATmb=100˚C;VGS=10V-12AIDMPulseddraincurrentTmb=25˚C-68APDTotalpowerdissipationTmb=25˚C-79WTj,TstgOperatingjunctionand-55175˚CstoragetemperatureAVALANCHEENERGYLIMITINGVALUESLimitingvaluesinaccordancewiththeAbsoluteMaximumSystem(IEC134)SYMBOLPARAMETERCONDITIONSMIN.MAX.UNITEASNon-repetitiveavalancheUnclampedinductiveload,IAS=7.8A;-150mJenergytp=300μs;Tjpriortoavalanche=25˚C;VDD≤25V;RGS=50Ω;VGS=10V;refertofig:14IASPeaknon-repetitive-17Aavalanchecurrentdgs123tabgatesourcedraindrainAugust19991Rev1.100PhilipsSemiconductorsProductspecificationN-channelTrenchMOS™transistorIRF530NTHERMALRESISTANCESSYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNITRthj-mbThermalresistancejunction--1.9K/WtomountingbaseRthj-aThermalresistancejunctionSOT78package,infreeair-60-K/WtoambientELECTRICALCHARACTERISTICSTj=25˚CunlessotherwisespecifiedSYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNITV(BR)DSSDrain-sourcebreakdownVGS=0V;ID=0.25mA;100--VvoltageTj=-55˚C89--VVGS(TO)GatethresholdvoltageVDS=VGS;ID=1mA234VTj=175˚C1--VTj=-55˚C-6VRDS(ON)Drain-sourceon-stateVGS=10V;ID=9A-80110mΩresistanceTj=175˚C--275mΩgfsForwardtransconductanceVDS=25V;ID=9A6.411-SIGSSGatesourceleakagecurrentVGS=±20V;VDS=0V-10100nAIDSSZerogatevoltagedrainVDS=100V;VGS=0V-0.0510μAcurrentVDS=80V;VGS=0V;Tj=175˚C--250μAQg(tot)TotalgatechargeID=9A;VDD=80V;VGS=10V--40nCQgsGate-sourcecharge--5.6nCQgdGate-drain(Miller)charge--19nCtdonTurn-ondelaytimeVDD=50V;RD=2.7Ω;-6-nstrTurn-onrisetimeVGS=10V;RG=5.6Ω-36-nstdoffTurn-offdelaytimeResistiveload-18-nstfTurn-offfalltime-12-nsLdInternaldraininductanceMeasuredtabtocentreofdie-3.5-nHLdInternaldraininductanceMeasuredfromdrainleadtocentreofdie-4.5-nH(SOT78packageonly)LsInternalsourceinductanceMeasuredfromsourceleadtosource-7.5-nHbondpadCissInputcapacitanceVGS=0V;VDS=25V;f=1MHz-633-pFCossOutputcapacitance-103-pFCrssFeedbackcapacitance-61-pFREVERSEDIODELIMITINGVALUESANDCHARACTERISTICSTj=25˚CunlessotherwisespecifiedSYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNITISContinuoussourcecurrent--17A(bodydiode)ISMPulsedsourcecurrent(body--68Adiode)VSDDiodeforwardvoltageIF=17A;VGS=0V-0.921.2VtrrReverserecoverytimeIF=17A;-dIF/dt=100A/μs;-55-nsQrrReverserecoverychargeVGS=0V;VR=25V-135-nCAugust19992Rev1.100PhilipsSemiconductorsProductspecificationN-channelTrenchMOS™transistorIRF530NFig.1.Normalisedpowerdissipation.PD%=100⋅PD/PD25˚C=f(Tmb)Fig.2.Normalisedcontinuousdraincurrent.ID%=100⋅ID/ID25˚C=f(Tmb);conditions:VGS≥10VFig.3.Safeoperatingarea.Tmb=25˚CID&IDM=f(VDS);IDMsinglepulse;parametertpFig.4.Transientthermalimpedance.Zthj-mb=f(t);parameterD=tp/TFig.5.Typicaloutputcharacteristics,Tj=25˚C.ID=f(VDS)Fig.6.Typicalon-stateresistance,Tj=25˚C.RDS(ON)=f(ID)NormalisedPowerDerating,PD(%)01020304050607080901000255075100125150175MountingBasetemperature,Tmb(C)0.010.11101E-061E-051E-041E-031E-021E-011E+00Pulsewidth,tp(s)Transientthermalimpedance,Zthj-mb(K/W)singlepulseD=0.50.20.10.050.02tpD=tp/TDPTNormalisedCurrentDerating,ID(%)01020304050607080901000255075100125150175MountingBasetemperature,Tmb(C)0246810121416182000.20.40.60.811.21.41.61.82Drain-SourceVoltage,VDS(V)DrainCurrent,ID(A)4.6VTj=25CVGS=10V4.8V5V5.2V8V4.4V5.4V6V0.11101001101001000Drain-SourceVoltage,VDS(V)PeakPulsedDrainCurrent,IDM(A)D.C.100ms10msRDS(on)=VDS/ID1mstp=10us100us00.020.040.060.080.10.120.140.160.180.202468101214161820DrainCurrent,ID(A)Drain-SourceOnResistance,RDS(on)(Ohms)VGS=10VTj=25C6V8V5.2V5.4V5V4.8V4.6VAugust19993Rev1.100PhilipsSemiconductorsProductspecificationN-channelTrenchMOS™transistorIRF530NFig.7.Typicaltransfercharacteristics.ID=f(VGS)Fig.8.Typicaltransconductance,Tj=25˚C.gfs=f(ID)Fig.9.Normaliseddrain-sourceon-stateresistance.RDS(ON)/RDS(ON)25˚C=f(Tj)Fig.10.Gatethresholdvoltage.VGS(TO)=f(Tj);conditions:ID=1mA;VDS=VGSFig.11.Sub-thresholddraincurrent.ID=f(VGS);conditions:Tj=25˚C;VDS=VGSFig.12.Typicalcapacitances,Ciss,Coss,Crss.C=f(VDS);conditions:VGS=0V;f=1MHz02468101214161820012345678910Gate-sourcevoltage,VGS(V)Draincurrent,ID(A)VDSIDXRDS(ON)Tj=25C175CThresholdVoltage,VGS(TO)(V)00.511.522.533.544.5-60-40-20020406080100120140160180JunctionTemperature,Tj(C)typicalmaximumminimum012345678910111213141502468101214161820Draincurrent,ID(A)Transconductance,gfs(S)Tj=25C175CVDSIDXRDS(ON)Draincurrent,ID(A)1.0E-061.0E-051.0E-041.0E-031.0E-021.0E-010