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当前位置:首页 > 商业/管理/HR > 管理学资料 > ICP等离子体刻蚀系统射频偏压的实验研究-张庆钊
29 520085 JOURNALOFSEMICONDUCTORSVol.29 No.5May,2008*(:2006AA843134)(:2007CB935302).Email:izqz@163.com 2007-10-08,2007-11-092008ICP*张庆钊 谢常青 刘 明 李 兵 朱效立 陈宝钦(, 100029):(ICP)———.,300mmICP.,(),,,、.:;;ICP;PACC:5225;5250 EEACC:2310;2315:TN405.98 :A :0253-4177(2008)05-0980-041 ,,,.[1],:[2],,;,..ICP,(Vdc)[3],,.,.(SRF/BRF),.,300mmICP,,,,.2 ICP1.300mmICP,13.56MHz,,;,[4]..,200sccm.3 、,、.,.,,,.1 Fig.1 SchematicoftheICPetcher5: ICP2 (a)10mTorr;(b)25mTorr;(c)85mTorrFig.2 RelationshipbetweentheVdcandSRF (a)Gaspres-sureis10mTorr;(b)Gaspressureis25mTorr;(c)Gaspressureis85mTorr3.1 10,2585mTorr;60,80,100,120160W,,2.2,,,,,85mTorr,.,,,.25mTorr,60W,800W,,,.,10mTorr,,60W160W,800W,.1.1 10mTorr,Table1 ValuesofSRFandBRFatturnpointswhengaspres-sureis10mTorr/W6080100120160/W500600600800800,,,,,.2(a),(b)(c),,,,,.,,,,,.[5,6]:(1),,,,,(),3.,,[7]:,(),,,.,;,,,,(),4.(2),,,,,,3 10mTorr,Fig.3 Ratioofelectrontopositiveion,underdifferentsourceRFpowerswhengaspressureis10mTorr981 294 10mTorr,Fig.4 EnergyofelectronunderdifferentsourceRFpowerswhengaspressureis10mTorr,,,.3.2 10,2585mTorr;400,500,600,8001000W,,5.5 (a)10mTorr;(b)25mTorr;(c)85mTorrFig.5 RelationshipbetweentheVdcandBRF (a)Gaspressureis10mTorr;(b)Gaspressureis25mTorr;(c)Gaspressureis85mTorr6 (a)60W;(b)100W;(c)160WFig.6 RelationshipbetweentheVdcandgaspressure (a)BRFpoweris60W;(b)BRFpoweris100W;(c)BRFpoweris160W5,,,,.,10mTorr,8001000W,.,,;,,.,,;,.,.9825: ICP3.3 60,100160W;400,500,600,8001000W,,6.6,,.,,;,,.,,,.,,.4 ———.,(),,,、.,、、.,.[1] InternationalTechnologyRoadmapforSemiconductor,2005[2] TachiS.Impactofplasmaprocessingonintegratedcircuittech-nologymigrationfrom1nmto100nmandbeyond.JVacSciTechnol,2003,A21(5):131[3] KellyPG,HallR,O'BrienJ,etal.Studiesofmid-frequencypulsedDCbiasing.JVacSciTechnol,2001,A19(6):2856[4] LeeJW,DonohueJF,MackenzieKD,etal.Mechanismofhighdensityplasmaprocessesforion-drivenetchingofmaterials.Solid-StateElectron,1999,43:1769[5] BoylePC,EllingboeAR,TurnerMM.ElectrostaticmodelingofdualfrequencyRFplasmadischarges.PlasmaSourcesSciTechn-ol,2004,13:493[6] MahonyCMO,MaguirePD,GrahamWG.Electricalcharacter-izationofradiofrequencydischarges.PlasmaSourcesSciTechn-ol,2005,14:60[7] ZhangHB,ZhangD.Plasmatechnologyinelectronicengineer-ing.Beijing:SciencePress,2002(inChinese)[,,..:,2002]RFBiasVoltageinICPEtchSystems*ZhangQingzhao,XieChangqing,LiuMing,LiBing,ZhuXiaoli,andChenBaoqin(LaboratoryofNanofabricationandNovelDevicesIntegration,InstituteofMicroelectronics,ChineseAcademyofSciences,Beijing 100029,China)Abstract:InordertounderstandtherelationshipbetweenRFbiasvoltageonbottomelectrodeandotherprocessparameters,wede-signedanexperiment.Theresultsindicatedthattherelationshipvariesdependingontheotherparameters'variation.Theupperelec-trodeRFpower,thebottomelectrodeRFpower,andgaspressurealldistinctlyaffectthisrelationship.Keywords:plasma;RFbiasvoltage;ICP;dryetchPACC:5225;5250 EEACC:2310;2315ArticleID:0253-4177(2008)05-0980-04*ProjectsupportedbytheNationalHighTechnologyResearchandDevelopmentProgramofChina(No.2006AA843134)andtheStateKeyDevelop-mentProgramforBasicResearchofChina(No.2007CB935302)Correspondingauthor.Email:izqz@163.com Received8October2007,revisedmanuscriptreceived9November20072008ChineseInstituteofElectronics983
本文标题:ICP等离子体刻蚀系统射频偏压的实验研究-张庆钊
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