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36120151CHINESEJOURNALOFLUMINESCENCEVol.36No.1Jan.20151000-7032201501-0001-19*130033、。TN248.4ADOI10.3788/fgxb20153601.0001DevelopmentofHighPowerDiodeLaserWANGLi-jun*NINGYong-qiangQINLiTONGCun-zhuCHENYong-yiStateKeyLaboratoryofLuminescenceandApplicationsChangchunInstituteofOpticsFineMechanicsandPhysicsChineseAcademyofSciencesChangchun130033China*CorrespondingAuthorE-mailwanglj@ciomp.ac.cnAbstractThispaperreviewsonthehistoryandthedevelopmentstatusforsemiconductorlasersmeanwhilefocusesonthehighpowersemiconductorlaserachievementsacquiredbyChangchunIn-stituteofOpticsFineMechanicsandPhysicsCIOMPinrecentyearsespeciallyattheaspectsofhighpowersemiconductorlasersourcesverticalcavitysurfaceemittinglasersVCSELandnovellaserchips.Keywordshighpowerdiodelaseredgeemittinglaserverticalcavitysurfaceemittinglaserchip2014-10-122014-11-168632012AA0402102011YQ040077026123400461176045613060866137607061434005114043276120405520140101172JC20130206006GX20140101206JC-0220140520132JH120、、。、、、、、、。、。、、。。、、236。、。21962———GaAs1-2。5×104~1×105A/cm23。。1963KroemerAlferov。VPE、LPE1967IMBWoodallLPEGaAsAlGaAs。1968—1970PanishHayashiSμmskiAlGaAs/GaAs8.6×103A/cm2。AlferovHD-LD。p-GaAsn-AlGaAsp-AlGaAs4×103A/cm2。124-5。6-7。1978。、。2080———MBE、MOCVDCBE、、。10~20nm。、。1977KenichiIgaVertical-cavitysurface-emittinglaserVCSEL81。、、、、9。VCSEL10-11198812。VCSEL13-14、15、16、17、1819。SHEDS、ADHEL20-21BRIOLAS22、。、、、、、、、、、23-24。13边发射半导体激光器垂直腔表面发射激光器800~1000滋m120滋mSubstrate50~200滋mVCSELN-contactBottomVCSELemission(~980nm)P-contactSubmountGainregion300~600滋m8°~10°25°~35°BottommirrorTopmirrorCurrentflow1Fig.1Edgeemittinglaserandverticalcavitysurfaceemittinglaser3、25。、、。3.1800~1100nm。26。、、。bar、、、。TraditionalbeamcombiningTBC、、、。ExternalcavityfeedbackwavelengthbeamcombiningECFWBC。3.1.110W25W1。1Table1CWoutputpowerofsemiconductorsingleemitterlaser/nm/W/%7881065nLight2011278082553LPI20092888525>61nLight20112898024.654FBH20093010601674Ioffe200731436。、≤100μm。、、。2632-37。FraunhoferUSA120200μm>700W。nLight72940nm4700W。3.1.2bar。bar2000240W1000W42。2barTable2Outputpowerofsemiconductorlaserbar/W/nm/%/%2000240940CW>5072OPC382004255808CW10℃49.167HamamatsuPhotonics392000267980CW22℃52.550Fraunhofer-IAF402005325920CW16℃6250Bookham412005364790CW6℃5880nLight422005509940CW5~8℃>6050Jenoptik432007700940CW25℃6577Spectra-Physics442007928940CW10℃6577Spectra-Physics4520071005980QCW15℃7044Jenoptik462010940940CW20℃7077SRL4748。。。503000W。49-53。Limo388200μm、0.221200W。Dilas28200μm、0.22775W500μm、0.123835W。Trumf100μm、0.12100W19600μm、0.123000W。3.1.3bar。barbar1550。。。、bar0.6cm350bar30cm3。。3000W。Laserline3。15kW100mm·mrad2kW20mm·mradNd∶YAG。543800hNd∶YAG<2000h。、、。3LaserlineTable3SemiconductorlaserstacksourceparametersfromGermanLaserlinecompany/W/mm·mrad/mmf=100mm/W·cm-2200020φ0.26.37×106400030φ0.35.66×106600040φ0.44.78×1061000060φ0.63.54×10615000100φ1.01.91×1063.2。、、、54。DARPA80%SHEDS55-60。70%。4。4Table4Wallplugefficiencyofsemiconductorlaser/nm2005Ioffe108072%562005970bar73%572006nLight975-50℃85%10℃76%602007nLight790795808880bar50W70%592007JDSU940bar100W76%582008FBH808bar80W70%593.3。、。、、、60。。63661-6667-71。bar56。5Table5Reliabilityofsemiconductorlasersingleemitter/nmJDSU20069xx35℃1.5×106h72Axcel200780810W100000h73Axcel20089158W25℃>220000h74nLight2010915/97680℃10W30716barTable6Reliabilityofsemiconductorlaserbar/nmJenoptik2008940120W>15000h75Jenoptik2009940100W10000~20000h76Jenoptik2010885120W>25000h743.4、、、、。、。WavelengthbeamcombiningWBC。3.4.1RidgewaveguideRW。。MasteroscillatorpopweramplifierMOPA2。MOPA77-80MasteroscillatorMOPoweramplifierPA。。RW-sectionTaperedsectionDBR-grating2DBRFig.2TypicaltaperedlaserwithDBRgratings20。FBH81-84。808nm4.4W1.9mm·mrad3.9W1.3mm·mrad460MW·cm-2·sr-18527W9W86。979nmDBR12W44%11.4W1.1mm·mrad1100MW·cm-2·sr-187。1060nmDBR12.2W10W1.2mm·mrad17pmFWHM800MW·cm-2·sr-188。8990-92。3.4.22002Ledentsov93。17。、、、、。7。7Table7Parametersofphotoniccrystalwaveguidesemiconductorlaser/nm9802002Ledentsov6°942003Maximov5.5°~6°952005Maximov9.7°~10.7°961.8W10W2008Maximov4.5°3.5°1.3W2008Novikov<5°972010D.Bimberg6°5°982.2W74%60%0.47mm·mrad8.7×107W·cm-2·sr-1980nm8502006Karachinsky9°99270mW2006Kettler10°5°1001.4mm·mrad86%2008Posilovic11.3°9.5°10120W3×108W·cm-2·sr-12009Kettler7°1021.5W6502005Maximov8°10320W85%2005Maximov7°~8°1046W2006Novikov8°105115mW1.44mm·mrad2006Shchukin7°4°10685%150mW3.4.3TBC。。TBC。ECFWBC107。3。。ECFWBC、、、。MIT、Teradiode、Coherent、Aculight、ThalesDTUECFWBCOutputcouplerDiffractiongratingLensDiodelaserarray3Fig.3Schematicdiagramofexternalcavityfeedbackspec-trumbeamcombiningtechnology8ECFWBCTable8SemiconductorlasersourcesbasedonECFWBCtechnology/W/mm·mrad/nmTeradiode200049765003.759763703.7597620303.759763600.6976Coherent14610976MIT89.52.41915Aculight271.5800836108-1158。Teradiode20122030W。3.4.44。1998200710。200720123Nd∶YAG。10940W3.5mm·mrad2030W3.75mm·mradCO2360W0.6mm·mrad2CO2。、、。10010CWoutputpower/WBeamquality/(mm·mrad)10001010.11001100010000Lamp-pumpedNd∶YAGlaserTaperedemitter(2008)CO2lasetTeradiodeDiodelaser(2007)Diodelaser(1998)琢-DFBemitter(2003)TBCWBCLaserlineDiode-pumpedsolidestatelasers4Fig.4Researchstatusofthebeamqualityofh
本文标题:大功率半导体激光器研究进展-王立军
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