HDL6V5583sp-1-0

P.1/27HIGHVOLTAGEMONOLITHICICHDL6V5583ProductSpecificationHDL6V5583Octal±100V1.8A3-levelUltrasoundPulserMDD-5583-1.0Copyright(c)2010,HitachiLtd.,MicroDeviceDivisionAllrightsreserved.TheHITACHIHDL6V5583isanoctal,high-voltage,high-speedfully-integratedpulserformedicalultrasoundimagingapplications.TheHDL6V5583consistsoflogicinterface,leveltranslators,MOSFETgatedrivebufferswithembedded/external-selectablefloatingvoltageregulators,andhigh-voltage,high-currentMOSFETsforpulsingandactivegroundclampingforeachchannel.TheHDL6V5583ispin-compatiblewithHDL6V5582/83E.Functions•8-channel,3-levelpulserwithactivegroundclampingwith2-inputperchannelFeatures•0to±100Voutputvoltage•±1.8Asourceandsinkpeakcurrentforpulsingwithoutoutputblockinghigh-voltage(HV)diodes•±1.0AsourceandsinkpeakcurrentforactivegroundclampingwithoutputblockingHVdiodes•500Ω(±0.05A)activeoutputterminationworkingwithactivegroundclamping•Embedded/external-selectablefloatingvoltageregulatorstothegatedrivebuffers•Inputdatasynchronizationwithaclocksignal(user-selectable)•Integratednoise-cutlow-voltage(LV)diodes•Upto20MHzoperationfrequency(@±60Voutput,220pFload)•1.8Vto5VCMOSlogicinterface•4-modeoutputdrivecurrentcontrolforpowersaving•Thermalprotection•Powersupplysequencefree•Latch-upfree,lowercrosstalkbetweenchannelsbySOICMOStechnology•52-lead8mmx8mmQFNpackage(RoHScompliant)•Pin-compatiblewithHDL6V5582/83EFig.1BlockdiagramP.2/27HDL6V5583HDL6V5583ProductSpecificationMDD-5583-1.0Copyright(c)2010,HitachiLtd.,MicroDeviceDivisionAllrightsreserved.1.AbsoluteMaximumRatingsTA=25°Cunlessotherwisenoted.Table1AbsoluteMaximumRatingsNo.ItemsSymbolValueUnitsCondition1PositivelogicsupplyVLL-0.4to+7V2PositivelogicandleveltranslatorsupplyVDD-0.4to+7V3NegativelogicandleveltranslatorsupplyVSS-7to+0.4V4PositivehighvoltagesupplyVPP-0.5to+105V5NegativehighvoltagesupplyVNN-105to+0.5V6DifferentialhighvoltagesupplyVPP-VNN+210V7Highvoltageoutputs(x=1~8)*HVOUTx-105to+105V8Gatedrivebuffervoltages(VPP-VFP),(VFN-VNN)-0.4to+7VFVSEL=09THP(THermalProtection)outputTHP-0.4to+7V10Alllogicinputvoltages(x=1~8)PINx,NINx,EN,CLK,CLKEN,CC1,CC0,ATHP,FVSEL-0.4to+7V11OperatingjunctiontemperatureTJop-20to+150oC12StoragetemperatureTSTG-55to+150oC13MaximumpowerdissipationPDmax4WNote:Stressesbeyondtheabsolutemaximumratingsmaycausepermanentdamagetotheproduct.2.OperatingSupplyVoltages,Conditions,andCircuits(Recommended)2.1OperatingSupplyVoltagesandConditionsTable2RecommendedOperatingSupplyVoltagesandConditionsNoItemsSymbolMinTypMaxUnitsCondition1LogicvoltagesupplyVLL2.42.5to5VDDVClockmode(≤80MHz)2.62.7to5VDDVClockmode(≤100MHz)1.71.8to5VDDVTransparentmode2PositivelowvoltagesupplyVDD4.7555.25V3NegativelowvoltagesupplyVSS-5.25-5-4.75V4PositivehighvoltagesupplyVPP0-100V5NegativehighvoltagesupplyVNN-100-0V6DifferentialhighvoltagesupplyVPP-VNN0-200V7P-chfloatinggatedrivevoltagesupplyVFPVPP-5.25VPP-5VPP-4.75VFVSEL=08N-chfloatinggatedrivevoltagesupplyVFNVNN+4.75VNN+5VNN+5.25VFVSEL=09High-levellogicinputvoltageVIH0.8VLL-VLLV10Low-levellogicinputvoltageVIL0-0.2VLLV11ICsubstratevoltage*VSUB-0-V12SlewratelimitofVPP,VNNSRMAX--25V/ms13Operatingfree-airtemperatureTA02575oCNote:*Substratebottomisinternallyconnectedtothecentralthermalpadonthebottomofthepackage.Itmustbesolderedtotheground.P.3/27HDL6V5583HDL6V5583ProductSpecificationMDD-5583-1.0Copyright(c)2010,HitachiLtd.,MicroDeviceDivisionAllrightsreserved.2.2Power-Up/DownSequencePower-SupplySequenceisnotrequired.2.3ApplicationCircuits(a)EMBEDDEDfloatingvoltagesupplies(FVSEL=1)Fig.2-(a)TypicalApplicationCircuit-1Note:1.High-voltagepowersupplypins,VPP/VNN,candrawfasttransientcurrentsupto±1.8A.Therefore,ceramiccapacitorsofover200V0.1μFto1μF(C1~8)shouldbeconnectedasclosetothepinsaspossibleforbypassingpurpose.Ceramiccapacitorsofover15V0.1μFto1μF(C13~15)shouldalsobeconnectedclosetothelow-voltagepowersupplypins,VLL/VDD/VSS.2.Ceramiccapacitorsofover15V1μFto2.2μF(C9~12)shouldbeconnectedbetweeneachfloatingvoltagepin(VFP/VFN)andhigh-voltagepowersupplypinforbypassingpurpose.Connectthoseasclosetothepinsaspossible.3.Itisalsoimportanttominimizethetracelengthandtohaveenoughtracewidthofthosehighvoltageandfloatingvoltagelines.4.ThethermaltabonthebottomofthepackagemustbesolderedtotheGND.5.[PRECAUTION]Externalhigh-voltageclampdiodesbetweenHVOUTxandVPP/VNNasshowninFig.2-(a)arestronglyrecommendedtomitigateexcessivevoltageovershootcausedbyareflectionfromaprobe.P.4/27HDL6V5583HDL6V5583ProductSpecificationMDD-5583-1.0Copyright(c)2010,HitachiLtd.,MicroDeviceDivisionAllrightsreserved.2.3ApplicationCircuits(Cont.)(b)EXTERNALfloatingvoltagesupplies(FVSEL=0)Fig.2-(b)TypicalApplicationCircuit-2Note:1.High-voltagepowersupplypins,VPP/VNN,candrawfasttransientcurrentsupto±1.8A.Therefore,ceramiccapacitorsofover200V0.1μFto1μF(C1~8)shouldbeconnectedasclosetothepinsaspossibleforbypassingpurpose.Ceramiccapacitorsofover15V0.1μFto1μF(C13~15)shouldalsobeconnectedclosetothelow-voltagepowersupplypins,VLL/VDD/VSS.2.Ceramiccapacitorsofover15V1μFto2.2μF(C9~12)shouldbeconnectedbetweeneachfloatingvoltagepin(VFP/VFN)andhi