MOSFET损耗计算

假设参数值单位说明计算参数值单位说明Fs350KHzVgs5V开通过程T19.757E-10SVds12VVgp(on)2.278E+00VD0.45占空比MOSFET参数T21.854E-10SCiss955pFT39.707E-10SCoss145pFPloss(on)1.280E-02WCrss112pFCgs843pFCiss-CossCiss开通Piss(on)1.488E-02WCgd112pFCrssCds33pFCoss-Crss关断过程Vgp(oFF)2.354E+00VQg17nCT75.030E-10SQgs3.4nCT81.557E-10SQgd4.7nCPloss(on)9.305E-03WIo5.273AON时Vgp时电流Ip6.727AOFF时Vgp时电流Coss关断Pcoss3.65E-03WId11.6AVgs时电流Vth2VCiss关断Piss(on)1.488E-02WRds17.4mΩRg0.5ΩRds直流Prds0.28188WG19S跨导驱动器参数总损耗Ploss(total)3.374E-01WRon1.5ΩRoff0.5Ω假设参数值单位说明计算参数值单位说明Fs175KHzVgs12V开通过程T15.786E-08SVds12VVgp(on)2.511E+00VD0.3占空比Ion18.9AIoff23.1AMOSFET参数T25.967E-09SCiss8800pFT32.341E-08SCoss1600pFPloss(on)6.169E-01WCrss600pFCgs8200pFCiss-CossCiss开通Piss(on)1.071E-01W驱动器损耗Cgd600pFCrssCds1000pFCoss-Crss关断过程Vgp(oFF)2.553E+00VQg102nCT71.823E-09SQgs26nCT82.201E-09SQgd8nCPloss(on)1.014E-01WIo20A谷值电流Ip24A峰值电流Coss关断Pcoss2.02E-02WId11.6AVgs时电流Vth2.3VCiss关断Piss(on)1.071E-01W驱动器损耗Rds1.6mΩRg0.9ΩRds直流Prds0.23232WG95S跨导驱动器参数总损耗Ploss(total)1.185E+00WRon30ΩRoff1.5ΩRthja典型20℃/W无散热温升Tja2.370E+01℃Rthja最大68℃/W无散热温升Tja8.058E+01℃Rthjc典型0.8℃/WRthcs估值1℃/WRthsa估值3℃/W有散热温升Tja3.413E+01℃驱动器损耗驱动器损耗假设参数值单位说明Fs175KHzVdd12VPc2.14E-01D0.3占空比Pq6.56E-05Tr10nS过程时间Tf10nSMOSFET参数Ps0.084Ciss8800pFIp10.2Coss1600pFCrss600pFCgs8200pFCiss-CossCgd600pFCrssCds1000pFCoss-CrssQg102nCQgs26nCQgd8nC驱动器参数Roh30ΩRol1.5ΩIiH18uAIil0.1uAIsource5AIsikn3ARthja典型20℃/WRthja最大68℃/WRthjc典型0.8℃/WRthcs估值1℃/WRthca估值3℃/W说明充放电功耗静态功耗驱动器交越损耗