高脉冲功率能量PLD法制备MgZnO薄膜中的沉积机理

30320096CHINESEJOURNALOFLUMINESCENCEVol30No3Jun.,2009:10007032(2009)03034407高脉冲功率能量PLD法制备MgZnO薄膜中的沉积机理汪壮兵1,李祥1,于永强1,梁齐1,揭建胜1*,许小亮2(1.,230009;2,230026):PLDMgZnO:XRD;AFM,;PL,,,XRD,MgZnOPLD:MgZnO;;X;;:O482.31PACS:78.55.EtPACC:7855D:A:20090213;:20090309:(50872129,60806028);:(1974-),,,,,Emai:[e-mail]*:;Emai:[e-mail]1引言MgZnOZnOMgZnO,ZnO,,ZnO,MgZnOZnO,ZnO[1~4]PLD()MgZnO,PLDMgZnO,,,:,400[5],500[6],550[7],650[8],700[9],[10],Zn,100PaZnOZnO,MgZnO,,,X(XRD)(PL)(AFM),,,,[11]PLDMgZnO,PLDMgZnO,2实验99.99%ZnOMgO91,8h,,6002h,8h,,12005h,3,:PLDMgZnO3451.0!10-3Pa,MgZnO1160,220mJ;PLD,,,∀RT#,1160/220mJPLDTable1PLDgrowthparametersofMgZnOfilmswithlaserpulseenergyof160mJand220mJ,respectively.(mJ)()(Pa)(min)(Hz)(mm)/(min)160RT3006501530548-20/20220RT3006501530548-20/20XRDAFM/:X(D/MaxrB),CSPM4000()COMPexPro102KrF(248nm,400mJ,20Hz,25ns)PLDJOBINYVONFLUOROLOG3TAU/3结果与讨论1160mJ((a))220mJ((b))MgZnOXRD(002),c,c[12],ZnO(002)[6](a)160mJ,650,(002),,,(a),,Zn2SiO4(042)(240)[13](b)XRD(a):650,300(002),,;,(002)650,1160mJ(a)220mJ(b)MgZnOXRDFig.1TemperaturedependenceofXRDspectraofMgZnOfilmsdepositedwithlaserpulseenergyof160mJ(a)and220mJ(b),MgZnO,;,,(PL),234630ZnOPL380nm420~650nm(UV),UV,,ZnO,,(DL)(U/D),,[14],PL2(a)160mJ,PL,T=6501/4:650U/D28,UV150meV,PLDMgZnO;,UVDL,PL1(a)XRD2(b)2(a)2160mJ(a)220mJ(b),MgZnOPLFig.2TemperaturedependenceofPLspectraofMgZnOfilmsdepositedwithlaserpulseenergyof160mJ(a)and220mJ(b):650UVDL;300,UV,DL;,UV,DL,650,U/D,650220mJPL1(b)XRD,MgZnO3AFM,2160mJa~cAFM:,,1(a)XRD;XRD,,[15],,650RMS,,,220mJ(d~f):,,;,,,;AFM1(b)XRD,MgZnO:,2AFMTable2AFMparametersofMgZnOfilmsdepositedatdifferentsubstratetemperaturewithlaserpulseenergyof160mJand220mJ,respectively.160mJ220mJ(a)(b)(c)(d)(e)(f)(nm)15512410593.978.2131Ra23.24.344.162.853.8511.3RMS31.35.775.383.654.914.33,:PLDMgZnO3473AFM(a)160mJ,650;(b)160mJ,300;(c)160mJ,;(d)220mJ,650;(e)220mJ,300;(f)220mJ,Fig.3AFMimagesofMgZnOfilmsdepositedwithpulseenergyof(a)160mJat650,(b)160mJat300,(c)160mJatroomtemperature,(d)220mJat650,(e)220mJat300and(f)220mJatroomtemperature.,MgZnO,,[12,13],,ZnO,XRD(002),,,;,;,,AFM(c),,,,;,,,Ed,EPEd,,,,,(∀#),,AFM,,300,,;650,34830,,300(,),,,15Pa30,45Pa,,,415,30,45Pa4160mJ(a)220mJ(b),MgZnOXRDFig.4XRDpatternsofMgZnOfilmsdepositedwithpulseenergyof(a)160mJand(b)220mJinoxygenpressureof15Pa,30Paand45Pa,respectively.MgZnOXRD,,160mJ220mJ(4(a))15Pa30,45Pa,(002)0.290∃0.303∃,0.312∃,;(4(b))(002)0.329∃0.291∃,0.285∃,,,,4结论MgZnO160mJ650,;220mJXRDPLAFM:MgZnO,c,,,,;,,,,;,,:[1]DongXin,ZhaoWang,ZhangBaolin,etal.StudyonopticalpropertiesofptypeMgZnOfabricatedbyMOCVD[J].Chin.J.Lumin.(发光学报),2008,29(1):129132(inChinese).[2]DongLipu,LiuYuxue,Xuchangshan,etal.HighqualityMgxZn1-xOfilmsfabricatedbyelectronbeamevaporationcombinedwithheattreatment[J].Chin.J.Lumin.(发光学报),2008,29(2):313317(inChinese).[3]LiuYing,YangShenghong,ZhangYuel,ietal.StructuralandopticalpropertiesofMgxZn1-xOthinfilmspreparedbysolgelmethod[J].Chin.J.Lumin.(发光学报),2008,29(4):718722(inChinese).3,:PLDMgZnO349[4]JiangDayong,ZhangJiying,ShanChongxin,etal.SolarbrindphotodetectorbasedonMgZnOthinfilms[J].Chin.J.Lumin.(发光学报),2008,29(4):743746(inChinese).[5]LiuM,WeiXQ,ZhangZG,etal.EffectoftemperatureonpulsedlaserdepositionofZnOfilms[J].Appl.Surf.Sci.,2006,252(12):43214326.[6]FanXM,LianJS,GuoZX,etal.MicrostructureandphotoluminescencepropertiesofZnOthinfilmsgrownbyPLDonSi(111)substrates[J].Appl.Surf.Sci.,2005,239(2):176181.[7]ZouJun,ZhouShengming,XiaChangta,ietal.Structure,opticalandelectricalpropertiesofZnOfilmsgrownoncplanesapphireand(100)LiAlO2bypulselaserdeposition[J].J.CrystalGrowth,2005,280(12):185190.[8]WangZhaoyang,HuLizhong,ZhaoJie,etal.EffectofthevariationoftemperatureonthestructureandopticalpropertiesofZnOthinfilmspreparedonSi(111)substrateusingPLD[J].Vacuum,2005,78(1):5357.[9]BianJiming,DuGuotong,HuLizhong,etal.GrowthandphotoluminescencecharacteristicsofhighqualityZnOfilmsbypulsedlaserdeposition(PLD)method[J].Chin.J.Lumin.(发光学报),2006,27(6):958962(inChinese).[10]ZhuBL,ZhaoXZ,SuFH,etal.StructuralandopticalpropertiesofZnOthinfilmsonglasssubstrategrownbylaserablatingZntargetinoxygenatmosphere[J].Phys.B,2007,396(12):95101.[11]DongLin,MaYing,Lihao,etal.PreparationofCu/Cu2OthinfilmsonflexibleITOsubstratesviaelectrochemicaldeposition[J].Chin.J.Lumin.(发光学报),2007,28(5):798801(inChinese).[12]ChoopumS,VisputeRD,ZochW,OxygenpressuretunedepitaxyandoptoelectronicpropertiesoflaserdepositedZnOfilmsonsapphire[J].Appl.Phys.Lett.,1999,75(25):39473949.[13]XuXiaoliang,GuoChangxin,QiZemin,etal.AnnealingeffectforsurfacemorphologyandluminescenceofZnOfilmonsilicon[J].Chem.Phys.Lett.,2002,364(12):5763.[14]FanXM,LianJS,JiangQing,etal.EffectofoxygenpressureonthephotoluminescencepropertiesofZnOthinfilmsbyPLD[J].J.Mater.Sci.,2007,42(8):26782683.[15]ZhangLide.NanomaterialandNanostructure[M].Beijing:AcademicPress,2001,148.TheDepositionMechanismofMgZnOFilmsbyPLDwithHighPulseEnergyWANGZhuangbing1,LIXiang1,YUYongqiang1,LIANGQi1,JIEJiansheng1,XUXiaoliang2(1.DepartmentofAppliedPhysics,HefeiUniversityofTechnology,Hefei230009,China;2.DepartmentofPhysics,Univer