COG-制程原理及流程

COG制程原理及流程COG课程导览一、课程目标:1-1:使学员了解COG制程原理1-2:使学员了解COG制程动作流程1-3:使学员了解COG制程之检验规范1-4:使学员了解COG制程之DefectMode二、课程对象:2-1:LCM厂制程与设备工程师2-2:对COG制程有兴趣的同仁三、授课时数:3-1:COG制程原理及动作流程15min3-2:COG制程检验规范10min3-3:COG制程之DefectMode5minTFTLCDProcessJIJBOS/GCOGLaserCutCellKittingTestAssembleModuleCellArrayPCBPCBtestSLCCOGProcessCOG:ChipOnGlassPurpose:BondingDriverwithCellKeyComponents:•Cell•ACF•DriverIC(LSI)CellCellPadBondingareaIConTrayGoldbumpOutputside(Cell)MECICInputside(FPC/PCB)DriverICDriverICPassivationTi/WGoldbumpprofileAuAl主要组成:黏着剂导电粒子ACFIntroductionACF:AnisotropicConductiveFilm(异方向性导电膜)目的:垂直方向电气通电水平方向电气绝缘CellACFICACFIntroductionForceStep1ICACFCellEachchannelConductiveindependentlyStep2ACFIntroductionTypeAC-8601AC-8623Thickness23±3um23±3umSeparatorthickness50um50umAdhesivethickness15±2um15±2umConductivethickness8±1um8±1umWidth1.5±0.1mm1.5±0.1mmLength100m50mParticlesize3±1um3±1umConductiveParticles44,000±12,500pcs/mm244,000±12,500pcs/mm2Connectionresistance5.0Ωorless5.0ΩorlessInsulationresistance10E8Ωormore10E9ΩormoreAttachparameter80℃/1MPa/3s80℃/1MPa/3sMainbondparameter190℃/100MPa/10s150℃/100MPa/10sExpirationtime(5℃/RT)7month/30days4.5month/10daysConductiveAdhesiveSeparatorHitachiACFACFIntroductionACFIntroductionBump(ACFcleaned)Bump(afterbonding)ConductiveParticleBump(beforebonding)ACFIntroductionCOGProcessACF反应率需达80%以上为何使用AC-8623(低温)解决ToolMura问题ACFIntroduction工具：ICPrebondunti目的：将IC预压着于ACF/Cell上制程参数：AC-8601AC-8623温度压力时间80±580±51MPa1MPa3s3sCellloader目的：将cell传送至机台内工具：Loader/Tray/Cassette制程参数：无wetleanCellloader目的：清除Cell上压着区异物工具：无尘布/溶剂(丙酮)制程参数：尚未量化WetcleanCOGProcessFlowchartUVcleanUVClean目的：清除Cell上压着区有机物工具：UVunit制程参数：900mJ/cm2照射累积照度1600mJ/cm2水滴角30度ACFAttachACFAttach目的：将ACF预贴于Cell工具：ACFattachunit制程参数：AC-8601AC-8623温度压力时间80±580±51MPa1MPa3s3sICPrebondICPrebondICmainbondICmainbond目的：•将IC压着于ACF/Cell上•加热ACF,使ACF进行硬化反应工具：ICPrebondunit制程参数AC-8601AC-8623温度压力时间190±5150±5125MPa厂商建议100MPa125MPa厂商建议100MPa10s10sCellunloaderCellunloader目的：将将Cell传送至机台外工具：Unloader/Tray/Convey制程参数：无VisualInspectionVisualInspection目的:：检查IC压着是否合乎标准工具：显微镜制程参数：无外观COGProcessCriteriaACF贴附IC压痕IC压著精度•TFT/CF玻璃破损比照CellKitting规格线路刮伤比照CellKitting规格•偏光板显示区內不可有压、刺伤•ICIC背部不可有裂痕COGCriteria(外观)ACFACF上缘上限/ACFupperlimitACF上缘下限/ACFlowerlimitMARK1MARK2Case1MARK1MARK1'ACF上缘上限/ACFupperlimitACF上缘下限/ACFlowerlimitACFCase2贴附标准：ACF上缘必须位于Upper/LowerLimit之间贴附精度：±100umCOGCriteria(ACF贴附)COGCriteria(ACF贴附)Source-SideGate-SideGate-SideNolimitmakeDriveICCOGCriteria(ACF贴附)•贴覆标准ACF必须完全覆盖AUL及ALL•贴附精度：±100umABC倒角ColorFilterCellCOGCriteria(ACF贴附)电极上的导电粒子压痕至少5个两个Bump之间不能互相接触以金属显微镜观察IC的压着区不可有异物COGCriteria(压痕)压着标准：Bump不可接触到灰色区域，且两颗bump不可互相接触COGCriteria(压著精度)WLABACABL:145umW:75umA:50umB:12.5umC:20umBBModelB141XN03B141XG03Inputside(FPC/PCB)MECICOutputside(Cell)COGCriteria(压著精度)FC1IC异物FC11FC12X-IC异物Y-IC异物FC2IC压痕不良FC21FC22X-IC压痕不良Y-IC压痕不良FC3ACF贴附不良FC3COGACF贴附不良FC4IC对位偏移FC41FC42X-IC对位不良Y-IC对位不良FC5IC厚度不均FC5IC厚度不均FC6IC电遇不良FC61FC62X-IC电遇不良Y-IC电遇不良FC7IC破裂/刮伤FC7IC破裂/刮伤FC8ICBUMP不良FC81FC82X-ICBUMP不良Y-ICBUMP不良COGDefectModeFC11：X-IC异物FC12：Y-IC异物•状况描述：于IC压著区内有异物•发生原因：IC进料携带物OP吸取IC時污染环境particle污染ICFC1–IC异物FC21：X-IC压痕不良FC22：Y-IC压痕不良•狀況描述：区块性Bump无导电粒子压痕•发生原因：IC背部异物残留本压头异物残留ACF溢胶(Bump含胶不足)FC2–IC压痕不良过短无压痕FC3–COGACF贴附不良FC3：ACF贴附不良状况描述：•ACF贴附过短•ACF贴附位置异常•ACF未贴上发生原因：•铁氟龙未裝好•Roller/clamp残胶/不洁•切刀不利•Sensor位置异常•Colorfilter凸角过•ACF是否过期/异常FC4–IC对位偏移FC41：X-IC对物偏移FC42：Y-IC对物偏移状况描述：•IC压著位置未符合规范发生原因：•石英Backup位置异常/松动/高度异常•ICMark辨认不良•本压平坦度不佳•ACF贴附不良•异常使用強制对位FC5–IC厚度不均DriverICA,B厚度不均ABFC5：IC厚度不均关况描述：IC厚度左右不均，导致压痕不良发生原因：IC进料品质不良FC6–IC电测不良FC61：X-IC电测不良FC62：Y-IC电测不良狀況描述：•IC机能不良导致显示异常发生原因：•IC品质不良•IC于生产过程中遭压/刺伤FC7–IC破裂/刮伤FC7：IC破裂/刮伤状况描述：•IC外观发生原因：•IC品质不良•IC于生产过程中遭压/刺伤FC81：X-ICBump不良FC82：Y-ICBump不良状况描述：单一ICBump无导电粒子压痕，或少于五颗导电粒子压痕发生原因：单一Bump高度太高/太低FC8–ICBump不良END以上资料仅供大家学习参考!