可靠性技术的应用与发展(pdf5)(1)

:1004-7204(2003)02-0026-05(,518067)::AGREE;ESS;HALT&HASS;Arrhenius;R(t);();;;:O213.2:ATheapplicationanddevelopmentofreliabilitytechnologyRamaxelTechnologyLimited(Shenzhen518067)R&DDepartmentYANLiAbstract:Thereliabilityofelectronicproductsisassuredbymanyproceduressuchasdesigning,manufactur2ing,testingandmanagement.Keywords:AGREE;ESS;HALT&HASS;ArrheniusEquation;ReliabilityR(t);Failurerate();HeatEx2change;EMC;ScreeningStrength1AGREE(AdvisoryGrouponReliabilityofElectronicEquipment)19577,,40,,,,,,:,,,,,2,,,,,,,:2.1,,,,,:2002-12-12:,,HALT6220032©1995-2004TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.,,GJB/Z352.2,,,,,BETAFlotherm,::a.PCB,;,b.,,PCBc.,,,,d.,,,e.,,,f.,PCBPCB,PCBPCB:a.,,,b.c.PCB,,PCB,PCB2.3:(),::,,():,:,:a.:,;,,b.:PCBA,,;PCBc.:,,,2.47220032©1995-2004TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.(),,1,GJB299B-98;MIL-HD2BK-217FRELIABILITYPREDICTIONOFELECTRON2ICEQUIPMENT:SRAMDRAMROM:p=Q[C1TV+(C2+C3)E]LPROM:p=Q[C1TVPT+(C2+C3)E]LEEPROM:p=Q[C1TVCYC+(C2+C3)E]L:p,10-6/hEQLT,VPTPROMCYCEEPROM/C1C2C32,::,,:R1R2R3Rniti,Ri(ti),i=1,2,3,,n:Rs(t)=R1(t1)R2(t2)R3(t3)Rn(tn)ni=1Ri(ti),Ri=exp{-iti}:RS(t)=ni=1e-iti=exp{-ni=1iti},:t1=t2=t3==ti==tn=t,,RS(t)=exp(-tni=1i),RS(t)=exp(-ts),s:s=ni=1i:MTBF=S=1/S,4,:R1=0.96,R2=0.97,R3=0.98,R4=0.98,?::RS=R1R2R3R4=0.960.970.980.98=0.894,:(1);(2),,,;(3),,(),,,;,,33.18220032©1995-2004TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.:ArrheniusModelArrhenius:AF(t)=exp{(Ea/k)(1/Tuse-1/Tstress)}AF(t)Ea(activationenergy=0.3ev-1.2evkBoltzmann=8.61710-5ev/okTuseTstress(VoltageAccelerationFactor)AF(v)=exp{z0Vstress|-Vuse|}AF(v)z(typically,0.5z1.0)Vstress(Stressvoltage)Vuse(Operatingvoltage)Hallberg-PeckModelHallbergPeck:AF(RH)=[RHstress/RHuse]nAF(RH)RHstressRHusen23Coffin-MansonModel():AF(tc)={[Tstress(hot)-Tstress(cold)]/[Tuse(hot)-Tuse(cold)]}AF(tc)Tstress(hot/cold)Tuse(hot/cold)48AF=AF(t)AF(RH)AF(v)FailureRateEstimating=X2(,2n+2)1092AFDH(FIT)X2()x2nDH=3.2ESS(Environmentstressscreen),,:SS=1-exp{-0.0017(R+0.6)0.6[Ln(e+v)]3N}:R()V(/min)NDODD4245.7-M:10/min:Tu=60TL=-40R=100N=15,SS=1-exp{-0.0017(100+0.6)0.6[Ln(e+10)]315}=1-0.0013=99.87%,,:SS=1-exp{-0.0046(Grms)1.71t}:t(min)GrmsgDODD4245.7-M:9220032©1995-2004TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.:(PSD1)(K),(PSD2),PSD2=PSD1100.1K{Log2(f2/f1)},Kf1,f2,GrmsGrms=(A1+A2+A3)1/2:Grms=6.06gt=20min:SS=1-exp{-0.0046(6.06)1.7120}=1-exp{-0.004621.778520}=86.5%ESS,,,3.3HALT&HASSHALT(HighlyAcceleratedLifeTesting)HASS(HighlyAcceleratedStressScreening),HALT,,,,,HALT::-100+200;60/min:,36;60Grms;2Hz10KHz:ThermalStepStressTest();RapidThermalTransitionsStressTest(60/min);VibrationStepStressTest();CombinedEnvironmentStressTest()HALT,HOBBSGregg.k.Hobbs,HALT,HASS,,,,HALT,4,,,,,,,,,,,,,:[1].[M].,2001.[2]EIAENGINEERINGBULLETINDMSMSConference2000HenryLivingston.[3]MILITARYHANDBOOKMIL2HDBK2217F2December1991.0320032©1995-2004TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.