掺杂半导体-金属膜系的光谱透射反射特性

/(,201800)(1999419;1999531)p,.D/M2,.PACC:7365;78651.,,..,,(T30%),,.(ITO),.(R70%),.,/.2,().,,,R,.p,,.p[1].g,,g().g,gTR.Ag,AgÜp=912eV,Üg=318eV,4812199912100023290/1999/48(12)/2349208ACTAPHYSICASINICAVol.48,No.12,December,1999n1999Chin.Phys.Soc.=2ÜcÜ=1.2367/Ü,(1)Ü,c,m.(1),Agp=01134m,g=0133m.1,AgVp,Vg01134m;,Ag.1Ag.Ag,,Agnd,ndn.(2)(/)r1(/)r2,,2.2,r2r2=-r1e-2()d,(),d,R(r1+r32)2=r21(1-e-2()d)2.(3)d()dn1,(4)(1-e-2()d)n1,R,T=(1-R).[2],.1Ag2.,In2O3,SnO2,ZnO,NaWO3,InSnO3(ITO).V,T016018.[3],33=(n-ik)2=-Ne20m3(2-i/€),(5),N,e,m3,€,nk.053248(5),,3r0,p=Ne20m3,p=2c0m3Ne2.(6)p3p.1(6),3p(3p),(3p).,3p,p3p.SnO2Ü3p=018eV,Üg=316eV.SnO2(Sb,F)N,pN,p,SnO2,g-pV.3,SnO2V=g-p.(7)ITOSn4+In2O3[4],ITO3p=11124m,g=0134m,VITOg-p.ITOŠT80%,3ITO(),ITO(SnO2(10wt%)In2O3(90wt%))(PET)ITO.ITO.Heraeus(95%)ITO,1712%,17124%,ITO.HeraeusITO5010-6,.3,ITO3ITOFTOT80%,ITOR315m65%,.ITO23153212:/.,.R(=6m)ITORsh():Rsh,..ITO,.3Rsh10/.3/,.,T30%,95%./,N/.In2O3SnO23111241149m.SnO23pIn2O3,(6),SnO2p.SnO2.SnO2,Sb,SbSn,;F,FO.FO,F,SnO2F.[1],SnO2SbATO.,P,As,In,Br,ISnO2.FSbSnO2.(6),pm3N.F,FTO(FSnO2)m3,p1.1FTOpN/1020cm-31.683.774.685.31p/m2.11.401.261.18FFTO.1,SnO2N51311020cm-3,SnO2gp0134111m.SnO2.1,AgpAgAg,0133m,Ag,Ag.Cup=0154m,g=0159m.Cu0159m,Cu.253248ÜgAgSnO2.SnO2/AgSnO2p=1118mAgp=0132m,SnO2Ag.,dAg,d5,8,10,12,15,20nm.Ag01333100m.,1012nmAg,(m=0145m)75%,90%..PET.12nmAg,Agd(N=5151020cm-3)SnO2,M/D.(N=5151020cm-3)SnO2,SnO212nmAg,AgSnO2,D/M/D.SnO2d5,10,12,15nm.4(a)(b)SnO2/AgSnO2/Ag/SnO2.4SnO2SnO2/Ag(a)SnO2/Ag/SnO2(b)4,SnO2Ag.SnO212nm,SnO2/Ag(m=0155m).SnO2/Ag/SnO2D/M.12nmSnO2.,SnO2/AgSnO2/Ag/SnO2AgSnO212nm.SnO2/Ag80%.SnO2/Ag/SnO283%.,1012nmAgITOITO/Ag,353212:/80%,,.4411,,,.(PETPE).SnO2/AgITO/Ag.Ag,FTO(ITO).,.,-100-700V,+100V,,110,40kHz,80%,(30%).IGPT,,.(),().2().SnO2Ag,SnO245mm,Ag55mm.O,Ag,Ag+,Ag.,.151000mm/min,,1%.412(10-2Pa),AgAr,SnO2O2/Ar(1%).,11nmAg;,12nmSnO2(FTO).,SnO2/Ag.ITO/AgSnO2/Ag,SnO2ITO(IT).413,SnO2,(PET)SnO2/Ag.Ag1012nm,SnO24532481214nm.SnO2,SnO2.5N(1)SnO2SnO2/Ag.5,SnO2/Ag(p)SnO2N,1,p.(=118m),N,R,T.SnO2pN,5N=51311020cm-3SnO2/Ag.(01320178m)Vm(Tµ80%).215m,R,R90%,,TiO2,In2O3,ITOSiO2/Al.5SnO2/AgSnO2/Ag,(Rsh=550/).,.ITO,In,ITOSnO2/Ag,.,SnO2/Ag.51)p,,,.SnO2ITO.2)(4),Ag12nm.AgSnO2/Ag,SnO2.SnO2Ag12nm,SnO2/Ag553212:/.3)/,.SnO2/Ag.[1]E.S.Thi,A.Banerjee,K.L.Chopra,ThinSolidFilms,88(1982),99.[2]E.Valkonen,SolarEnergy,32(1984),211.[3]B.Karlsson,SPIT,653(1986),148.[4]K.Utsumi,O.Matsunaga,T.Takahata,ThinSolidFilms,334(1998),30.[5],,19(1998),752[ZhaoJun2qing,MaJing,LiShu2ying,HongLei,ChineseJournalofSemiconductors,19(1998),752(inChinese)].SPECTRALTRANSMISSIONANDREFLECTIONOFTHEDOPINGSEMICONDUCTOR/METALFILMSSYSTEMSLIDAN2ZHI(DepartmentofPhysics,ShanghaiUniversity,Shanghai201800)(Received19April1999;revisedmanuscriptreceived31May1999)ABSTRACTThepaperpresentsthattheplasmafrequencypofsemiconductorfilmsareregulatedbythewayofchangingitsdopingconcentration,whichleadtohightransmission.Zoneofthefilmshiftvisi2blespectralrangV,thesemiconductorfilmiscombinedwiththemetalwhichthinnessinducedtransmissionfrequencyglocateintheedgeofultravioletrangetocomposetheexcellentD/Mspec2traltransmissionandreflectionfilmsystems.Besides,itisalsonecessarytoselectthemostsuitablecombinationofthethicknessbetweenthesemiconductorandthemetalfilmsforformingtheexcellenttransparentheatinsulationfilm.PACC:7365;7865653248