硅基光电器件研究进展

(,071002),,,,ResearchDevelopmentofSilicon-BasedOptoelectronicDevicesGuoBaozeng(DepartmentofElectronic&InformationalHebeiUniversity,Baoding071002)AbstractSilicon2basedoptoelectronicdevicesareincreasinglyimportantininfor2mationandcommunicationtechnologies.Butattemptstointegratephotonicswithsili2con2basedmicroelectronicsarehamperedbythefactthatsiliconhasanindirectbandgap,whichpreventsefficientelectron2photonenergyconversion.Inordertosolvethisproblem,manytechnologiestomakeoptoelectronicdeviceswhichcanbecompatiblewithconventionalsilicontechnologyhavebeendeveloped.Inthisarticle,wereviewthedeve2lopmentofthesethchnologies.KeywordsPoroussiliconOptoelectronicdevicesSiliconintegratedcircuit1,,,,,,,83%,83%,,,Ë2Í,,,,,,[1],,,,,,,91199922412,,[2]11,,,,,,,,,,(,),1Lm,,,,,,,,:(1)Ë2ÍË2Í,,,(2),,,,,,[24](3)pnB,,,[5],,[6](4),,,,,,,,[7,8],31990CanhamLT(PS),,,311,,0219992241,,,,,,,,,,,,,,,,,,,,,,,,,,312,,,1991,(LED)(700nm),,45LED10-5%,,20,012%,1%,2NenadLalic,,012%,4[9]2NenadLalicPSLEDJ.P.Zhengööp2Si,,630900nm1,B.naln(UV2PS),AuönUV2PSöpSiöAln,,,,(),,12mWöcm20135%,[10],,,[16],1219992241,,K.D.Hirschman,,,(SRSO),,LEDSRSO(1000),[2]:108cmpp+,,p+(40%,),(70%80%,),015110Lm800900,(,10%)SRSO,,,(610)013Lmn+,9001000,SRSO,n+(1012cm-2),SRSO:117210eV,2V,10mAöcm2,1mWöcm2,011%LED3,,LED,3(a)(),3(b),3(c),,,LED,B100,100Acm-2(1kWcm-2),,,,,3,34öB,,,,BB2FeSi2(B2FeSi2(100),),115Lm(LED,),,2219992241,B2FeSi2B2FeSi2,B2FeSi2,D.Leongöpn,,4[5]4öLED,pnn(100),n(51018cm-3,014Lm),p(11017cm-3,110Lm)B2FeSi2pnB2FeSi2,80K,018V(EL),,EL580K1154Lm80K,,EL,011%,1154Lm55[7,8],SiöSiGeSiöSiCSiöGeSiöSiO2,,Z.H.LuSiO2öSi(100),,SiSiO2,SiO21nm,,Si,110nm,(CBM)(VBM),:$ECBM(eV)=017öd2Si(1)$EVBM(eV)=-015öd2Si(2)dSiSi,80mW,45719nm,Si3nm,,PLSi6Si3nm,3219992241PLSi,,(1),(2)6SiöSiO2PLSiSiöSiO2PL,,,,,,,,6,,,,,,,,,,,,,,pnB2FeSi2,1154Lm,,,,,,,1DavidAB,Miller.Siliconseesthelight.Nature,1995;378:2382HamilfonB.Poroussilicon,SemiconSciTechnol,1995;10:11873CullisAG,CanhamLT,CalcottPDJ.Thestructuralandluminescencepropertiesofporoussilicon.JApplPhys,1997;82(3):9094ZhengDW,HuangYP,HeZJetal.Microstructure,heattreatmentandoxidationstudyofporoussiliconformedonmoderatelydopedp2typesilicon.JApplPhys,1997;81(1):4925LeongD,HarryM,ResonKJetal.Asiliconöiron2disili2cidelightemittingdiodeoperatingatawavelengthof115Lm.Nature,1997;387:6866ZhengB,MicherJ,RenFYGetal.Room2temperaturesharplineelectroluminesenceatK=1154Lmformaner2bium2doped,siliconlight2emittingdiode.ApplPhysLett,1994;64(21):28247ForsterM,MantzU,RaminngerSetal.Electrolu2minescence,andphotocurrentstudiesofSiöSiGep2i2nheterostructures.JApplPhys,1996;80(5):30178LuZH,LockqwordDJ,BaribeauJM.Quantumconfine2mentandlightemissioninSiO2öSisuperlattices.Nature,1995;378:2589LalicN,LinnrosJ.Characterizationofaporoussilicondiodewithefficientandturnaleelectroluminescence.JAp2plPhys,1996;80(10):597110UnalB,BaylissSC.Electroluminescenceandphoto2voltaticeffectsofanodicallyfabricatedmetalöporousSiöSisandwichstructuresbasedonn2typeultraviolet2porousSi.JApplPhys,1996;80(6):3532(19980123),,1982,19901991,304219992241