SS8550三极管

JIANGSUCHANGJIANGELECTRONICSTECHNOLOGYCO.,LTDTO-92Plastic-EncapsulateTransistorsSS8550TRANSISTOR(PNP)FEATURESPowerdissipationPC:1W(Ta=25)MAXIMUMRATINGS(Ta=25℃unlessotherwisenoted)SymbolParameterValueUnitVCBOCollector-BaseVoltage-40VVCEOCollector-EmitterVoltage-25VVEBOEmitter-BaseVoltage-5VICCollectorCurrent-Continuous-1.5ATjJunctionTemperature150℃TstgStorageTemperature-55-150℃ELECTRICALCHARACTERISTICS(Ta=25℃unlessotherwisespecified)ParameterSymbolTestconditionsMinTypMaxUnitCollector-basebreakdownvoltageV(BR)CBOIC=-100uA,IE=0-40VCollector-emitterbreakdownvoltageV(BR)CEOIC=-0.1mA,IB=0-25VEmitter-basebreakdownvoltageV(BR)EBOIE=-100μA,IC=0-5VCollectorcut-offcurrentICBOVCB=-40V,IE=0-0.1μAEmittercut-offcurrentICEOVCE=-20V,IE=0-0.1μAEmittercut-offcurrentIEBOVEB=-5V,IC=0-0.1uAhFE(1)VCE=-1V,IC=-100mA85400DCcurrentgainhFE(2)VCE=-1V,IC=-800mA40Collector-emittersaturationvoltageVCE(sat)IC=-800mA,IB=-80mA-0.5VBase-emittersaturationvoltageVBE(sat)IC=-800mA,IB=-80mA-1.2VBase-emittervoltageVBE(on)VCE=-1V,IC=-10mA-1VOutcapacitanceCobVCB=-10V,IE=0mA,f=1MHZ20pFTransitionfrequencyfTVCE=-10V,IC=-50mA,f=30MHZ100MHzCLASSIFICATIONOFhFE(2)RankBCDD3Range85-160120-200160-300300-400TO-921.EMITTER2.BASE3.COLLECTORB,Sep,2011℃【南京南山半导体有限公司—长电三极管选型资料】-1-10-100-1000101001000-0-1-2-3-0-50-100-150-200-250-1-10-100-1000-0.2-0.4-0.6-0.8-1.0-1.202550751001251500.00.20.40.60.81.01.2-0.2-0.4-0.6-0.8-1.0-1-10-100-1000-1-10-100-1000-1-10-100-1000-2-10-100101001000-0.1-1-10100-1500Ta=25℃-300Ta=100℃COMMONEMITTERVCE=-1VhFE——IC30030-30-3DCCURRENTGAINhFECOLLECTORCURRENTIC(mA)COMMONEMITTERTa=25℃StaticCharacteristic-1.0mA-0.7mA-0.9mA-0.6mA-0.5mA-0.8mA-0.4mA-0.3mA-0.2mAIB=-0.1mACOLLECTORCURRENTIC(mA)COLLECTOR-EMITTERVOLTAGEVCE(V)-1500-300Ta=100℃Ta=25℃β=10-30-3VBEsat——ICBASE-EMMITTERSATURATIONVOLTAGEVBEsat(V)COLLECTORCURRENTIC(mA)PC——TaCOLLECTORPOWERDISSIPATIONPC(W)AMBIENTTEMPERATURETa()℃-1500-300Ta=100℃SS8550TypicalCharacteristicsTa=25℃-30-3COMMONEMITTERVCE=-1VCOLLECTORCURRENTIC(mA)BASE-EMITTERVOLTAGEVBE(V)-1500-3-300Ta=100℃-300-30-30-3VCEsat——ICβ=10Ta=25℃COLLECTOR-EMMITTERSATURATIONVOLTAGEVCEsat(mV)COLLECTORCURRENTIC(mA)fT——IC30030-30-6COMMONEMITTERVCE=-10VTa=25℃TRANSITIONFREQUENCYfT(MHz)COLLECTORCURRENTIC(mA)VCB/VEB3010IC——VBECobCib-0.3-20-3f=1MHzIE=0/IC=0Ta=25℃Cob/Cib——CAPACITANCEC(pF)REVERSEBIASVOLTAGEV(V)B,Sep,2011Min.Max.Min.Max.A3.3003.7000.1300.146A11.1001.4000.0430.055b0.3800.5500.0150.022c0.3600.5100.0140.020D4.3004.7000.1690.185D13.4300.135E4.3004.7000.1690.185ee12.4402.6400.0960.104L14.10014.5000.5550.571Φ1.6000.063h0.0000.3800.0000.015SymbolDimensionsInMillimetersDimensionsInInches1.270TYP.0.050TYP.【南京南山半导体有限公司—长电三极管选型资料】【南京南山半导体有限公司—长电三极管选型资料】【南京南山半导体有限公司—长电三极管选型资料】【南京南山半导体有限公司—长电三极管选型资料】ItemSymbolValue&ToleranceBodywidthA14.5±0.2BodyheightA4.5±0.2BodythicknessT3.5±0.2Leadwirediameterd0.46±0.05PitchofcomponentP12.7±0.3FeedholepitchP012.7±0.2HolecentertocomponentcenterP26.35±0.3LeadtoleaddistanceF1,F22.5±0.3Componentalignment,F-R△h0±1.0TypewidthW18.0+1.0,-0.5HoledowntapewidthW06.0±0.5HolepositionW19.0±0.5HoledowntapepositionW21.0MAX.HeightofcomponentfromtapecenterH19.0±1.0LeadwireclinchheightH016.0±0.5Leadwire(tapeportion)L12.5MIN.FeedholediameterD04.0±0.2TapedLeadThicknesst10.4±0.05CarrierTapeThicknesst20.2±0.05PositionofholeP13.85±0.3Componentalignment△P0±1.0Unit:mm【南京南山半导体有限公司—长电三极管选型资料】Spongestrip2000pcsSpongestripThetopgasketLabelontheInnerBoxPlasticbagLabelontheOuterBoxInnerBox:333mm×162mm×43mmOuterBox:350mm×340mm×250mmQALabelSealtheboxwiththetapeStamp“EMPTY”ontheemptybox【南京南山半导体有限公司—长电三极管选型资料】InnerBox:240mm×165mm×mmLabelontheInnerBoxOuterBox:525mm×360mm×262mmLabelontheOuterBoxQALabelSealtheboxwiththetapeStamp“EMPTY”ontheemptybox【南京南山半导体有限公司—长电三极管选型资料】