电场辅助电化学法沉积ZnO纳米线

©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.(1.,730000;2.,730000):ZnO(TEM)X(XRD),ZnO,,60nm,(101):ZnO;;PL:O484:A:10002985X(2008)0120056204ZnONanowiresSynthesizedbyElectricField2assistedElectrochemicalDepositionCHANGPeng1,LIUSu1,CHENRong2bo1,TANGYing1,HANGen2liang2(1.SchoolofPhysicalScienceandTechnology,LanzhouUniversity,Lanzhou730000,China;2.InstituteofTransducerTechnology,GansuAcademyofScience,Lanzhou730000,China)(Received24April2007,accepted2July2007)Abstract:ZnOnanowiresarrayswerefabricatedinanodizedaluminumoxidetemplatesbyelectricfield2assistedelectrochemicaldepositionmethod.Theresultoftransmissionelectronmicroscopyindicatesthatthenanowiresarestraightanduniform.TheX2raydiffractionpatternsindicatethatthenanowiresarehighlyoriented.Theresultofselectedareaelectrondiffractionsuggeststhatthenanowiresaresinglecrystals.Thephotoluminescentspectrumpresentsabroad2bandluminescenceintheregionof3502650nm.TheeffectoftheassistedtransverseelectricfieldonthegrowingprocessofZnOnanowiresisalsodiscussed.Keywords:ZnOnanowires;electrochemicaldeposition;PLspectrum:2007204224;:2007207202:(3ZS0512A252034):(19752),,,E2mail:[e-mail]1ZnO,[1]ZnOII2VI,,,3.37eV,60meV,[2],ZnO,,,[3]ZnO,(CVD)[4],©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.(MOCVD)[5],(MOVPE)[6],(PLD)[7],4001150,,,[8,9],,,ZnO,(001),,(AAO),III2VII2VI2,99.999%,[10]0.3M,40VAAO[11]AAOHgCl,0.5M40H3PO450min,AAOZnOYUE[12214]AAO,,0.00166MZnCl2,Na2S,(a)0.01250M,10V50Hz,10V,,,ZnON=CQMr3(1)(1),C,Q,M,r,NX(XRD,Rigaku/Max22400);(TEM,EM2400T);X(XPS,PHI25702);(PL,FLS920T)1(a)(b)(c)(d)Fig.1ThegrowingprocessofZnOwithout(a)andwiththetransverseelectricfield(b)(c)(d)31ZnO1(a),ZnO,ZnO,ZnO,Zn2+O2+,1(b)(c)(d),,ZnO,,,2ZnOTEMZnOAAO301M24h,AAO,ZnO,10VZnO,60nm2(c)(SAED),ZnO3ZnOXRD,2=35.96,,(101)ZnOXRD©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.(002),ZnO,ZnOAAO,(101)2ZnOTEM(a)(b)SAED(c)Fig.2TEMimageoftheZnOnanowires(a)(b)andSAEDresultsoftheas2grownproducts(c)3AAOZnOXRDFig.3XRDpatternsofZnOnanowiresintheAAOtemplate4XPS4(a)Zn,O,CAl4(b)(c)Zn2p3/2O1sXPSC1s,4(d)Zn2p3/21021eV,ZnO,[15]531eVO1s,[16]410VZnOXPS(a)(b)Zn2p3/2(c)O1s(d)C1sFig.4XPSspectraofZnOnanowiredepositedat10V:(a)fullrange;(b)Zn2p3/2;(c)O1sand(d)C1s5325nmHe2CdPLPL350650nm:390nm,446nm509nm390nm[17,18]446nm(3.072.87eV)509nm,O[19221]©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.(101)TEM,60nm,SAEDZnO,XPSPL,390446509nm[1]PeartonSJ,NortonDP,IpK,HeoYW,SteinerT.RecentProgressinProcessingandPropertiesofZnO[J].Prog.Mater.Sci.,2005,50:293.[2]YangP,YanH,MaoS,RussoR,JohnsonJ.ControlledGrowthofZnONanowiresandTheirOpticalProperties[J].Adv.Funct.Mater.,2002,12:323.[3]DingSW,ZhangSY,LiuSJ,etal.SynthesisandPhotocatalyzingPropertyofNano2ZnO[J].ChineseJ.Inorg.Chem.,2002,18:1015.[4]WuJJ,LiuSC.Low2TemperatureGrowthofWell2AlignedZnONanorodsbyChemicalVaporDeposition[J].Adv.Mater.,2002,14:215.[5]ParkWI,YiGC,KimJW,etal.SchottkyNanocontactsonZnONanorodArrays[J].Appl.Phys.Lett.,2003,82:4358.[6]OgataK,MaejimaK,FujitaS,etal.GrowthModeControlofZnOTowardNanorodStructuresorHigh2QualityLayeredStructuresbyMetal2organicVaporPhaseEpitaxy[J].J.Cryst.Growth,2003,248:25.[7]ChoiJH,TabataH,KawaiT.InitialPreferredGrowthinZincOxideThinFilmsonSiandAmorphousSubstratesbyaPulsedLaserDeposition[J].J.Cryst.Growth,2001,226:493.[8]KÊnenkampR,RobertC.Word,SchlegelC.VerticalNanowireLight2EmittingDiode[J].Appl.Phys.Lett.,2004,85:6004.[9]PauportT,LincotD.HeteroepitaxialElectrodepositionofZincOxideFilmsonGalliumNitride[J].Appl.Phys.Lett.,1999,75:3817.[10]BandyopadhyayS,MillerAE,ChangHC,etal.ElectrochemicallyAssembledQuasi2PeriodicQuantumDotarrays[J].Nanotechnology,1996,7:360.[11]MatsumotoY,HanajiriT,ToyabeT,etal.SingleElectronDevicewithAsymmetricTunnelBarriers[J].Jpn.J.Appl.Phys.,Part1,1996,35:1126.[12]YueGH,YanPX,LiuJZ.,etal.Fabrication,Structure,MagneticPropertiesofHighlyOrderedCobaltDisulfideNanowireArrays[J].Appl.Phys.Lett.,2005,87:262505.[13]YueGH,YanPX,FanXY,etal.CharacterizationoftheSingleCrystallineIronSulfideNanowireArraySynthesisbyPulsedElectrodeposition[J].J.Appl.Phys.,2006,100:124313.[14]YueGH,YanPX,FanXY,etal.StructureandPropertiesofCobaltDisulfideNanowireArraysFabricatedbyElectrodeposition[J].ElectrochemicalandSolid2StateLetters,2007,10:D29.[15]LaajalehtoK,KartioI,NowakP,etal.XPSStudyofCleanMetalSulfideSurfaces[J].Appl.Surf.Sci.,1994,81:11.[16]PengWQ,CongGW,Qu,SC,etal.SynthesisofShuttle2LikeZnONanostructuresFromprecursorZnSNanoparticles[J].Nanotechnology,2005,16:1469.[17]MeiZX,ZhangXQ,YiLX,etal.PreparationandPhotoluminescentPropertiesofZnOThinFilm[J].Chin.J.Lum.,2002,23(4):3892392(inChinese).[18]XuXL,XuJ,XuCM,etal.CathodoluminescenceofZnOFilmsonSilicon[J].Chin.J.Lum.,2003,24(2):1712176(inChinese).[19]VanhensdenK,SeagerCH,WarrenWL,eta