SI2306

zAbsoluteMaximumRatings@TA=25℃unlessotherwisenotedParameterSymbolRatingsUnitDrain-SourceVoltageVDSS20Gate-SourceVoltageVGSS±12VDrainCurrent(Note1)ID2.8APowerDissipation(Note1)PD350mWOperatingandStorageTemperatureRangeTJ,TSTG-55to+150°CNote:1.MountedonFR-4PCB,1inchx0.85inchx0.062inch,foreachsingledie.20VN-ChannelEnhancementModeMOSFETSI2306PackageDimensionsVDS=20VRDS(ON),Vgs@4.5V,Ids@ΩRDS(ON),Vgs@2.5V,Ids@2.0AΩ80m3.0A70mFeaturesAdvancedtrenchprocesstechnologyHighDensityCellDesignForUltraLowOn-ResistanceHighPowerandCurrenthandingcapabilityIdealforLiionbatterypackapplications1-2012-7-8-50300080MillimeterMillimeterREF.Min.Max.REF.Min.Max.A2.3.GB2.2.H0.901.1C1.201.40K0.100.20D0.300.50J0.35E00.10L0.92F0.450.55M0°10°SOT-231.802.000.700.98DGSzElectricalCharacteristics@TA=25°CunlessotherwisespecifiedNote:2.Shortdurationtestpulseusedtominimizeself-heatingeffect.zTypicalPerformanceCharacteristicsParameterSymbolTestConditionsMinTypMaxUnitOFFCHARACTERISTICS(Note2)Drain-SourceBreakdownVoltageV(BR)DSSVGS=0V,ID=250uA2025--VZeroGateVoltageDrainCurrentIDSSVDS=20V,VGS=0V----1uAGate-BodyLeakageIGSSVGS=±12V,VDS=0V----±100nAONCHARACTERISTICS(Note2)GateThresholdVoltageVGS(TH)VDS=VGS,ID=250uA0.60.76--VStaticDrain-SourceOn-ResistanceRDS(ON)VGS=4.5V,ID=3AVGS=2.5V,ID=2A----60707080mΩForwardTransconductanceGFSVDS=10V,ID=6A--5--SDYNAMICCHARACTERISTICSInputCapacitanceCISS--562--OutputCapacitanceCOSS--106--ReverseTransferCapacitanceCRSSVDS=8V,VGS=0VF=1.0MHz--75--pFTotalGateChargeQG--4.86--Gate-SourceChargeQGS--0.92--Gate-DrainQGDVDS=10V,ID=6A,VGS=4.5V--1.4--nCSWITCHINGCHARACTERISTICSTurn-OnDelayTimeTD(ON)--18--Turn-OffDelayTimeTD(OFF)VDD=10V,ID=1Α,VGEN=4.5V,RG=6Ω--25--ns00.511.522.533.544.50246810125oC25oC-55oCID,Draincurrent(A)VGS,Gate-to-sourceVoltage(V)Figure2.TransferCharacteristics0123450246810VDS,Drain-SourceVoltage(V)VGS=2.5,3.0,3.5,4.0,4.5VVGS=2.0VVGS=1.5VVGS=1.0VFigure1.OutputCharacteristicsID,DrainCurrent(A)SI23062-2012-7-8-Figure6.BodyDiodeForwardVoltageVs.SourceCurrent0.00.30.60.91.21.510-310-210-1100101125oC25oC-55oCIS,Source-DrainCurrent(A)VSD,BodyDiodeForwardVoltage(v)0510152001002003004005006007008009001000Figure3.CapacitanceC,Capacitance(pF)VDS,Drain-to-SourceVoltage(V)-500501001502530354045505560Tj,JunctionTemperature(oC)Figure4.OnResistanceVs.TemperatureRDS(ON),NormalizedRDS(ON),OnResistance(mOhm)-500501001500.00.20.40.60.81.0Tj,JunctionTemperature(oC)Figure5.GateThersholdVs.TemperatureVTH,Gate-SourceThresholdVoltage(V)SI23063-2012-7-8-