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AdvancedSiMaterialsforHigh-PerformanceLi-ionBatteries1Outline1.Introduction2.AdvancedSiliconAnodeforLiBatteries(1)SiNanoparticle-BasedElectrodes(2)EngineeringSi-Basedelectrodes3.Conclusions2ImportanceofElectricalEnergyStorageWindOceansSolarPortableElectronicsElectricVehiclesRenewableEnergyStorage&GridWearable&ImplantableDevices3ElectricalEnergyStorageTechnologiesEnergyDensityPowerDensityCycleLife&SafetyCost4Introduction-RechargeableLithium-IonBatteriesEnergydensityHigherthanmostofotherbatteriesStillcannotmeettheEVapplicationsLiMO2/Cbattery(M=Ni,Co,Mn)OCV:3.9V180mAhg-1440Whkg-1(Practical:~150Whkg-1)5CurrentLimitationsMaterialsChallengesoLowTheoreticalSpecificCapacityoLimitedOperatingVoltageoCyclingStability/SafetyoCost/AbundanceFabricationChallengesoNanomaterialsoElectrodeStructuresoTechnologies6SiliconAnodeHighEnergyDensityPoorCyclingStability1.HighGravimetricCapacity&VolumetricCapacity2.Abundance1.LargeVolumeChange2.PulverizationB.J.Landi,*C.D.Cress,EnergyandEnvironmentalScience,2009,2,638-654.7OurSolutions1.NanostructuredSimaterials•Elevationofabsolutevolumechange•Shorteneddiffusionlength2.Designofrobustcompositematerialarchitecture•Largevoidspaceforvolumechange•Electronandiontransportationpathways•Robustness3.FabricationandengineeringofSi-basedelectrodesandtinbasedelectrodes•Improvedintegrityoftheelectrodes•Scalableproductionintheformofparticles•Compatiblewithcurrentdevice-fabricationtechnology(thickelectrode)8Solution1-EngineeringSiBasedElectrodesFlashHeatTreatmentF.Hassan,X.Xiao*,Z.Chen*,NanoLetters,2014,14(1),277-283.→Rapidthermalshockat900oC→Holdat900oCfor10min.→RapidcoolingSiSiSiSiSiSi+4PVDF6SiNP9Solution1-EngineeringSiBasedElectrodesInterfaceStructureF.Hassan,X.Xiao*,Z.Chen*,NanoLetters,2014,14(1),277-283.20406080100010002000204060801000100(b)Si(111)Cu(111)Si(220)Si(311)Cu(200)Si(331)Cu(311)Intensity(a.u.)Si(511)Cu0.83Si0.17(222,230)(a)Cu0.83Si0.17(222,230)Intensity(a.u.)2(degree)Si(111)Si(220)Si(311)Si(331)Si(511)Cu(111)Cu(200)Cu(311)FHTtreatment-CarbonizedPVDFCarbonshellaroundSi-Porositytocompensatevolumeexpansion-GrapheneandcoppersilicideattheinterfacefixtocopperWell-adheredcoatingGraphene@interface10Solution1-EngineeringSiBasedElectrodesMorphologyF.Hassan,X.Xiao*,Z.Chen*,NanoLetters,2014,14(1),277-283.SiSiSicore10nm02040608010001x1042x1043x1044x1045x104IntensityDistance(nm)CarbonOxygenEELSSi(core)→SiO2(innershell)→Carbon(outershell)Conductivelyconnecttheparticles11Solution1-EngineeringSiBasedElectrodesCyclingPerformanceF.Hassan,X.Xiao*,Z.Chen*,NanoLetters,2014,14(1),277-283.•70%1stCycleeff.•Decayrapidly•85%1stCycleeff.Above99%after•Capacityisover3000mAh/gNon-FHTtreatedFHTtreated12Solution1-EngineeringSiBasedElectrodesRatePerformanceF.Hassan,X.Xiao*,Z.Chen*,NanoLetters,2014,14(1),277-283.50010001500200025000.00.51.01.2A/gV(vsLi/Li+)SpecificCapacity(mAh/g)1st2nd3rd30th100th500th0.12A/g1235003010010020030040050001000200030004000afterFHTat1.2A/gChargeDischargeEfficiencyCyclenumberSpecificCapacity(mAh/g)0.12A/g020406080100Efficiency(%)1234515002000250001000200030000.00.20.40.60.81.01.22.5A/g1A/g0.5A/gV(vsLi+/Li)SpecificCapacity(mAh/g)0.1A/g0102030405060708090100010002000300040001A/gChargeDischargeEfficiencyCyclenumberSpecificCapacity(mAh/g)0.1A/g0.5A/g1A/g2.5A/g020406080100Efficiency(%)•1350mAhg-1afterswitchingto1.2Ag-1.99.8%cyclicefficiency13Solution2-EngineeringSiBasedElectrodesBindingSitoS-dopedGrapheneF.Hassan,X.Xiao*,Z.Chen*,NatureCommunications,UnderReview,2015.SiSiSiSiSiSi++OSSSSOOSSSOOHOHHOOOOOHOOOOHOHOOHOOHOOOHOOHOHOOHOOOOHO+SiNPPANSGGOMixingunderultrasonicirradiation→Coating→Sluggishheatingto450oC→Hold10min.→Furnacecool14Solution2-EngineeringSiBasedElectrodesMorphology•SicovalentlybondedtoSG•WrappedwithcyclizedPAN•3-Dofenhancedconductivity•RobustnessF.Hassan,X.Xiao*,Z.Chen*,NatureCommunications,UnderReview,2015.15Solution2-EngineeringSiBasedElectrodesStructureelucidation•Polyacrylonitrilecyclizeleadingtobetterconductivity•Coherentstructure•Flexible•Voidstocompensatevolumechange5001000150020002500300035004000PANafterSHTPANbeforeSHTRamanshift,cm-1Intensity,a.u.G-bandD-band5001000150020002500300035004000SG-Si-PANbeforeSHTSG-Si-PANafterSHTRamanshift,cm-1Intensity,a.u.D-bandG-bandSiF.Hassan,X.Xiao*,Z.Chen*,NatureCommunications,UnderReview,2015.16Solution2-EngineeringSiBasedElectrodesPerformance020406080100012345Aerialcapcity,mAhcm-2CycleNo.ChgDChg0.1Ag-1020406080100Efficiency,%05001000150020002500300035004000Specificcapacity,mAhg-10500100015002000250030000.00.20.40.60.81.01.21.41.61.8Voltage(V)SpecificCapacity,mAhg-1Cycle1Cycle2Cycle30.00.51.01.52.02.53.03.54.0Capacity,mAhg-10100200300400500600700800050010001500200025003000DischargeChargeSpecificcapacity,mAhg-1CycleNo.Ratecapability2Ag-10102030405060708090100Efficiency0102030400500100015002000250030002Ag-14Ag-12Ag-11Ag-10.5Ag-1mAhg-1CycleNo.0.1Ag-1Si-grapheneDecay0250500750100012501500175020002250010002000300040001033mAhg-14Ag-12Ag-1SpecificCapacity,mAhg-1CycleNo.ChargeDischarge0.1Ag-10.5Ag-11Ag-12Ag-1remain70%1470mAhg-12Ag-105101520253001000
本文标题:硅碳电池Battery-Seminar-Si
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