MOCVD外延生长GaN材料的技术进展-张冠英

:(F2009000124)MOCVDGaN,,(,300130):GaN,GaN(MBE)(HVPE)(MOCVD)HVPEGaN,;MBEGaN;MOCVDMOCVDGaNMOCVDGaNMOCVDGaNGaN,,,MOCVD,:;;;;MOCVD:TN604:A:10032353X(2010)0320201204DevelopmentoftheGrowthofGaNPreparedbyMetalOrganicChemicalVaporDepositionofGaNGrowthZhangGuanying,MeiJunping,XieXinjian(HebeiUniversityofTechnology,Tianjin300130,China)Abstract:Gallium2nitride2semiconductoroffersgoodpotentialvalueforapplicationinawiderangeofopticaldisplay,opticalrecordingandilluminationduetoitsexcellentquality.Atpresent,molecularbeamepitaxity(MBE),Chloridevaporphaseepitaxy(HVPE)andmetalorganicchemicalvapordeposition(MOCVD)areusedtopreparedGaN.ThehighestgrowthrateofGaNcanbegotbyHVPE,andthistechniqueissuitabletoprepareGaNsubstrates,thegrowthrateisthelowestbyMBE,MOCVDiswidelyusedinthegrowthofGaNbecauseoftheitssuitablegrowthrate.TheprincipletheoryanddevelopmentonMOCVDofGaNgrowthisgiven.ItisessentialtodevelopthefabricationtechnologyofhighquantityGaNsubstratesinlargearea,bufferlayertechnologyandlateralepitaxytechnology.Moreover,theresearchanddevelopmentintheinternationallevelMOCVDequipmentinourcountrymustbespeedup,andthemonopolyofimportedequipmentshouldbegraduallybroken.Keywords:MOCVD;GaN;heteroepitaxy;lateralepitaxy;MOCVDequipmentEEACC:0520F0GaNSiGaAs,(3139eV),;,GaN,,;,GaN,,GaN,[1]GaN,GaN,GaN,,MOCVD,MBEOutlookandFuturedoi:1013969/j1issn110032353x120101031001March2010SemiconductorTechnologyVol.35No.3201HVPEGaNMOCVD,,MOCVD,[2]MOCVDGaN,MOCVDGaN1MOCVD111MOCVDGaNMOCVDGaN,MO,NH3NH2N2,,,,112MOCVDMOCVDGaN2060,H1M1Manasevit[3]MOCVD,MOCVD,,MOCVDMBE,MOCVD,,7080,90GaAs,InP,GaN,GaN,GaN,GaN,1971,H1M1Manasevit[4]MOCVDGaN,GaN,,,n1018cm-3,21986,H1Amano[526]AIN,MOCVDGaN(500600)GaNAIN,,1000GaN,,,,n,(PL),GaN1991,S1Nakamura[7]GaNMOCVD,,,S1Nakamura[8]MOCVDpGaN,,1997,C1R1Lee[9],GaNB1L1Liu[10]2004,,GaN,MOCVD,,GaNMOCVD,MOCVD,MOCVD,MBE,,MOCVD,,MOCVDAIXTRONEMCORE(Veeco),RiberThomasSwan(AIXTRON)1994GaNMOCVDGaNMOCVD24(AIXTRON)GaN,GaNMOCVDGaN2MOCVD,2080MOCVD,,,MOCVD2MOCVDGaNMOCVDGaNGaN,,GaN,,:MOCVDGaN20235320103(ELOG)(SOI),,GaN211GaN,,1081010cm-2,1GaN1GaNTab11ThelatticeconstantandthermalexpansioncoefficientforthegrowthofGaNsubstratematerials/nm(a/a)/%/(10K)GaNa=013189c=0151855159(a)3117(c)GaNa=01452AlNa=013112c=0149822412(a)513(c)a=014785c=11299115715(a)815(c)6H-SiCa=01308c=11512315412(a)4168(c)Sia=0154301173159(a)MgOa=0142161015(a)MgAlO2a=01808397145(a)ZnOa=013250c=0152132128125(a)4175(c)SiCSi,GaN,,,:,,;,,Si;,;,SiCGaN,SiC,,,Si,Si,Si,SiGaNSiGaN,Si,Si,GaN,,SiAlNGaN2%,,GaNGaN,GaN,(HVPE)GaNZnO,MgO,MgAlO4[11],[12],,GaN[13]212GaN,,,,GaNS1Nakamura[8],GaN,AlN,,:AlN,3C2SiC,GaAs,AlAs,ZnO,LiGaO2,g2Al2O3,Si3N4,AlN/3C2SiC,AlN/GaN/AlN[14216]AlNGaN,GaN,GaNSixNyGaNAlGaN[17218],,,AINAlGaNAlN/GaN[19222]:MOCVDGaNMarch2010SemiconductorTechnologyVol.35No.3203,,GaN106cm-2,GaN,[23]3MOCVDGaN,,GaMOCVD,GaN,GaN;,GaN,GaN;MOCVD,MOCVD,:[1].[J].,2009,1:65273.[2].MOCVDGaN[D].:,2008.[3]MANASEVITHM.Singlecrystalgalliumarsenideoninsulatingsubstrate[J].APL,1968,12(4):1562159.[4]MANASEVITHM,SIMPSONWJ.Theuseofmetal2organicsintheprewparationofsemiconductormaterials[J].JElectrochemSoc,1969,116(12):172521732.[5]AMANOH,SAWAKIN,AKASAKII,etal.MetalorganicvaporphaseepitaxialgrowthofahighqualityGaNfilmusinganAlNbufferlayer[J].APL,1986,48:3532355.[6]AMANOH,AKASKII,HIRAMATSUK,etal.EffectsofthebufferlayerinmetalorganicvapourphaseepitaxyofGaNonsapphiresubstrate[J].ThinSolidFilms,1988,163:4152420.[7]NAKAMURAS,HARADAY,SENOHM.NovelmetallorganicchemicalvapordepositionsystemforGaNgrowth[J].APL,1991,58(18):202122023.[8]NAKAMURAS,SENOHM,MUKAIT.HighlyP2typeMg2dopedGaNfilmsgrownwithGaNbufferlayers[J].JJAP,1991,30(10A):L17082L1711.[9]LEECR,SONBSJ,LEEIH,etal.High2qualityGaNepilayergrownbynewlydesignedhorizontalcounter2flowMOCVDreactor[J].JofCrystalGrowth,1997,182(122):11216.[10]LIUBL,LACHABM,JIAA,etal.MOCVDgrowthofdevice2qualityGaNonsapphireusingathree2stepapproach[J].JofCrystalGrowth,2002,234(4):6372645.[11].[J].,2004,23(2):1172126.[12],,,.SiSi2SiO22SiGaN[J].,2004,25(6):6782681.[13],,,.GaN[J].,2002,19(1):123.[14]KROSTA,DADGARA,BLASINGJ,etal.EvolutionofstressinGaNheteroepitaxyonAlN/Si(111):fromhydrostaticcompressivetobiaxialtensile[J].APL,2004,85(16):344123443.[15]XUX,ARMITAGER,SHINKAIS,etal.EpitaxialconditionandpolarityinGaNgrownonaHfN2bufferedSi(111)wafer[J].APL,2005,86(18):1821042182106.[16]PARKCI,KANGJH,KIMKC,etal.CharacterizationofGaNthinfilmgrowthon3C2SiC/Si(111)substrateusingvariousbufferlayers[J].JCrystalGrowth,2001,224(324):1902194.[17]DADGARA,POSCHENRIEDERM,REIHERA,etal.ReductionofstressattheinitialstagesofGaNgrowthonSi(111)[J].APL,2003,82(1):28230.[18]RAGHAVANS,WENGX,DICKEYE,etal.CorrelationofgrowthstressandstructuralevolutionduringmetalorganicchemicalvapordepositionofGaNon(111)Si[J].APL,2006,88(4):0419042041906.[19]ZHANGBS,WUM,LIUJP,etal.Influenceofhigh2temperatureAlNbufferthicknessonthepropertiesofGaNgrownonSi(111)[J].JCrystalGrowth,2003,258(1/2):34240.[20]LIUW,ZHUJJ,JIANGDS,etal.InfluenceofAlNtheinterlayercrystalqualityonthestrainevolutionofGaNlayergrownonSi(111)[J].APL,2007,90(1):0119142011916.[21]CHENGK,LEYSM,DE