2L贴片三极管

JIANGSUCHANGJIANGELECTRONICSTECHNOLOGYCO.,LTDSOT-23Plastic-EncapsulateTransistorsMMBT5401TRANSISTOR(PNP)FEATURESComplementarytoMMBT5551IdealforMediumPowerAmplificationandSwitchingMARKING:2LMAXIMUMRATINGS(Ta=25℃unlessotherwisenoted)SymbolParameterValueUnitVCBOCollector-BaseVoltage-160VVCEOCollector-EmitterVoltage-150VVEBOEmitter-BaseVoltage-5VICCollectorCurrent-0.6APCCollectorPowerDissipation0.3WRΘJAThermalResistancefromJunctiontoAmbient416℃/WTjJunctionTemperature150℃TstgStorageTemperature-55～+150℃ELECTRICALCHARACTERISTICS(Ta=25℃unlessotherwisespecified)ParameterSymbolTestconditionsMinTypMaxUnitCollector-basebreakdownvoltageV(BR)CBOIC=-100µA,IE=0-160VCollector-emitterbreakdownvoltageV(BR)CEO*IC=-1mA,IB=0-150VEmitter-basebreakdownvoltageV(BR)EBOIE=-10µA,IC=0-5VCollectorcut-offcurrentICBOVCB=-120V,IE=0-0.1μAEmittercut-offcurrentIEBOVEB=-4V,IC=0-0.1μAhFE(1)*VCE=-5V,IC=-1mA80hFE(2)*VCE=-5V,IC=-10mA100300DCcurrentgainhFE(3)*VCE=-5V,IC=-50mA50VCE(sat)1*IC=-10mA,IB=-1mA-0.2VCollector-emittersaturationvoltageVCE(sat)2*IC=-50mA,IB=-5mA-0.5VVBE(sat)1*IC=-10mA,IB=-1mA-1VBase-emittersaturationvoltageVBE(sat)2*IC=-50mA,IB=-5mA-1VTransitionfrequencyfTVCE=-5V,IC=-10mA,f=30MHz100MHz*Pulsetest:pulsewidth≤300μs,dutycycle≤2.0%.CLASSIFICATIONOFhFE(2)RANKLHRANGE100-200200-300SOT–231.BASE2.EMITTER3.COLLECTORC,Nov,2012【南京南山半导体有限公司—长电贴片三极管选型资料】-0.1-1-10-100-0.0-0.2-0.4-0.6-0.8-1.0-0.0-0.2-0.4-0.6-0.8-1.0-0.1-1-10-100-1-10110100-1-10-10005010015020025030002550751001251500.00.10.20.30.4-0-3-6-9-0-2-4-6-8-10-12-14-16-18-20-0.1-1-10-100-0.01-0.1-1-0-5-10-15-20-25-30050100150200250300-600COLLECTORCURRENTIC(mA)BASE-EMITTERSATURATIONVOLTAGEVBEsat(V)Ta=25℃Ta=100℃β=10ICVBEsat——-600VCE=-5VTa=25℃Ta=100oCBASE-EMITTERVOLTAGEVBE(V)COLLECTORCURRENTIC(mA)VBE——IC-0.5f=1MHzIE=0/IC=0Ta=25oCCobCibVCB/VEBCob/Cib——REVERSEVOLTAGEV(V)CAPACITANCEC(pF)DCCURRENTGAINhFECOLLECTORCURRENTIC(mA)Ta=25oCTa=100oCVCE=-5VIChFE——-600COLLECTORPOWERDISSIPATIONPc(W)AMBIENTTEMPERATURETa()℃Pc——TaCOMMONEMITTERTa=25℃COLLECTORCURRENTIC(mA)COLLECTOR-EMITTERVOLTAGEVCE(V)-20uA-30uA-40uA-90uA-80uA-50uA-100uA-70uA-60uAIB=-10uAStaticCharacteristicMMBT5401TypicalCharacteristicsTa=25℃Ta=100℃β=10COLLECTORCURRENTIC(mA)COLLECTOR-EMITTERSATURATIONVOLTAGEVCEsat(V)VCEsat——ICVCE=-5VTa=25oCCOLLECTORCURRENTIC(mA)TRANSITIONFREQUENCYfT(MHz)ICfT——C,Nov,2012Min.Max.Min.Max.A0.9001.1500.0350.045A10.0000.1000.0000.004A20.9001.0500.0350.041b0.3000.5000.0120.020c0.0800.1500.0030.006D2.8003.0000.1100.118E1.2001.4000.0470.055E12.2502.5500.0890.100ee11.8002.0000.0710.079LL10.3000.5000.0120.020θ0°8°0°8°0.550REF.0.022REF.SymbolDimensionsInInchesDimensionsInMillimeters0.950TYP.0.037TYP.【南京南山半导体有限公司—长电三极管选型资料】ThebottomgasketThetopgasket3000×1PCS3000×15PCSLabelontheReelLabelontheInnerBoxLabelontheOuterBoxQALabelSealtheboxwiththetapeSealtheboxwiththetapeStamp“EMPTY”ontheemptyboxInnerBox:210mm×208mm×203mmOuterBox:440mm×440mm×230mm