连接器机械特性测试基础

料IndustrialTechnologyResearchInstituteMaterialsResearchLaboratories連連連(()()())/料李Tel:[phone]E-mail:[e-mail]/料李Tel:[phone]E-mail:[e-mail]料IndustrialTechnologyResearchInstituteMaterialsResearchLaboratories連連論連論)連;連離連兩路量行)連;力;displacement;滑frettingmotion;料IndustrialTechnologyResearchInstituteMaterialsResearchLaboratories連連連AGPSolt1USBCPUSocket料IndustrialTechnologyResearchInstituteMaterialsResearchLaboratories連連連)連;連TheConnectorHousing;TheContactSpring;TheContactInterface;TheContactFinish料IndustrialTechnologyResearchInstituteMaterialsResearchLaboratories連連連)zInterfacemorphologyzContactresistancez/Friction/DurabilityInfluencedby:NormalForce,ContactGeometry,BaseMaterialSelection)zProtectthecontactspringzOptimizethecontactinterface)連zElectricallyinsulatescontactszDimensionalcontrolzMechanicalsupportzEnvironmentalshielding)zVisualappeal)zConductspowerorsignalz離力Providesseparableinterfacenormalforcez/Providespermanent/semipermanentterminationzProvideselectricalstability料IndustrialTechnologyResearchInstituteMaterialsResearchLaboratories連PCI連)連;;;SMT;;ConnectorConnectorConnector料IndustrialTechnologyResearchInstituteMaterialsResearchLaboratories連連連)連;力;力;力;;金料;力050100150200250NormalForce(gf)0.010.020.030.040.050.0LLCR(mOhm)T:0.15R:0.30Au:1Sample1Sample2Sample3Sample4Sample5力料IndustrialTechnologyResearchInstituteMaterialsResearchLaboratories連料論料論--)料;料度量力;料料IndustrialTechnologyResearchInstituteMaterialsResearchLaboratories連料論料論--料料)RecommendedPlasticEvaluation;行;:¾SolventResistance,EIATP-11¾Corrosivity)¾ResistancetoSolderHeat,forProcessInvolvedEIATP-56¾Heat,TemperatureRatingofConnector¾Humidity,Cyclic;3)5)列力度2;SupplementalEvaluation¾Moldability流¾AssemblyConsiderations:Staking,Etc.料IndustrialTechnologyResearchInstituteMaterialsResearchLaboratories連料論料論--);連例¾力NormalForce¾度DurabilityLevels¾狀ContactGeometry¾量EnvironmentalConsiderations¾ThermalConditions¾路狀CircuitConditions¾TerminationStyles¾CostFactors料IndustrialTechnologyResearchInstituteMaterialsResearchLaboratories連料論料論--)RecommendedPlasticEvaluation;composition度,,度不,;appearance;度thickness;porosity易;度hardness力;adhesion;ductilityabletobecompliant;thermal:度;力friction:力;Nobility:料IndustrialTechnologyResearchInstituteMaterialsResearchLaboratories連料論料論--)不連暴露列;Substratesurfacedefects;不Uncleanplatingsolutions;力InternallyStressedDeposits(Cracks);度Thickness;異ProcessVariables)若不不)落不)洞)滑力降Porosity()inPlatings料IndustrialTechnologyResearchInstituteMaterialsResearchLaboratories連LowLevelValueofElectricalResistanceLowLevelValueofElectricalResistance)TotalOverallContactResistance)Thestabilityofinterfaceresistance)Therearethreetypesofelectricalresistance)SignalMeasurement)ChangeInResistance(mΩ)料IndustrialTechnologyResearchInstituteMaterialsResearchLaboratories連LowLevelValueofElectricalResistance(1)LowLevelValueofElectricalResistance(1)TOTAL=RB+RF+RC+RTOverall=Rpc+RB+RCRpc=ResistanceoftwoconnectionsRB=BulkresistanceoftwospringsRC=resistanceofthecontactinterface料IndustrialTechnologyResearchInstituteMaterialsResearchLaboratories連LowLevelValueofElectricalResistance(2)LowLevelValueofElectricalResistance(2))RB=BULKRESISTANCE;BulkResistanceisthenormalbasemetalresistance.Itdoesnotchangeexceptattemperature.;BaseMaterial-ConductiveLengthofContact;Crossectionalareaforpower;Electricalconductivityeffectsbulkresistance,constrictionresistanceandcurrentcarryingcapacity.Thebulkresistanceisthepredominatefactorinresistancemeasurements.料IndustrialTechnologyResearchInstituteMaterialsResearchLaboratories連LowLevelValueofElectricalResistance(3)LowLevelValueofElectricalResistance(3))RF=FILMRESISTANCE;Filmresistance(Surface)isdisruptedbywipingcontacts.Filmresistancecharacterizedbyunstablebehavior.;FilmResistancedependson:¾FilmConductivity¾FilmComposition/Structure¾FilmThickness¾FilmBreakdown(Cracking-tensilestress,Displacement-wipingaction,Dielectricbreakdown,Fritting);Normallynotaproblemunlesscorrosionorheavyoxidationoccurs.Wipingactionwith/orpropernormal.Forcewillbreakthroughnormalfilms.料IndustrialTechnologyResearchInstituteMaterialsResearchLaboratories連LowLevelValueofElectricalResistance(4)LowLevelValueofElectricalResistance(4))RT=TERMINATIONRESISTANCE(1.0m);CrimpedConnections;IDC(InsulationDisplacementConnection)Terminations;CompliantPinTerminations;SolderedConnections)RC=CONSTRICTIONRESISTANCE(1.0m);NormalForce;ConductivityofMaterial;MaterialHardness;SurfaceRoughness料IndustrialTechnologyResearchInstituteMaterialsResearchLaboratories連LowLevelValueofElectricalResistance(5)LowLevelValueofElectricalResistance(5))Thestabilityofinterfaceresistanceiskey.Itisinterrelatedto:;NormalForce;ContactGeometry;ContactConfiguration;PlatingIntegrity;CircuitConditions;EnvironmentalConsiderations;Sheltering料IndustrialTechnologyResearchInstituteMaterialsResearchLaboratories連LowLevelValueofElectricalResistance(6)LowLevelValueofElectricalResistance(6))Therearethreetypesofelectricalresistance1.LowLevelCircuitResistance(DC)-Signal2.RatedCurrent-Power3.ACResistance-HiSpeedDataTransmission)Signal;Testparame