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July2007Rev21/1717STP40NF20-STF40NF20STB40NF20-STW40NF20N-channel200V-0.038Ω-40A-D2PAK/TO-220/TO-220FP/TO-247LowgatechargeSTripFET™PowerMOSFETFeatures■Gatechargeminimized■Verylowintrinsiccapacitances■Verygoodmanufacturingrepeatability■Excellentfigureofmerit(RDS*Qg)■100%avalanchetestedDescriptionThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhigh-efficiencyisolatedDC-DCconverters.Applications■SwitchingapplicationFigure1.InternalschematicdiagramTypeVDSSRDS(on)IDPWSTB40NF20200V0.045Ω40A160WSTP40NF20200V0.045Ω40A160WSTF40NF20200V0.045Ω40A40WSTW40NF20200V0.045Ω40A160WD2PAK12313TO-247TO-220123TO-220FP(curves)............................63Testcircuit................................................94Packagemechanicaldata....................................105Packagingmechanicaldata.................................156Revisionhistory...........................................16STB40NF20-STF40NF20-STP40NF20-STW40NF20Electricalratings3/171ElectricalratingsTable1.AbsolutemaximumratingsSymbolParameterValueUnitTO-220D2PAKTO-247TO-220FPVDSDrain-sourcevoltage(VGS=0)200VVGSGate-sourcevoltage±20VID(1)1.ValuelimitedbywirebondingDraincurrent(continuous)atTC=25°C40AID(1)Draincurrent(continuous)atTC=100°C25AIDM(2)2.Pulsewidthlimitedbysafeoperatingarea.Draincurrent(pulsed)160APtotTotaldissipationatTC=25°C16040WDeratingFactor1.280.32W/°Cdv/dt(3)3.ISD≤40A,di/dt≤200A/µs,VDD≤V(BR)DSS,Tj≤TJMAXPeakdioderecoveryvoltageslope12V/nsVISOInsulationwithstandvoltage(RMS)fromallthreeleadstoexternalheatsink(t=1s;Tc=25°C)--2500VTstgStoragetemperature-55to150°CTjMax.operatingjunctiontemperatureTable2.ThermaldataSymbolParameterTO-220D2PAKTO-247TO-220FPUnitRthj-caseThermalresistancejunction-casemax0.783.1°C/WRthj-ambThermalresistancejunction-ambientmax62.55062.5°C/WTJMaximumleadtemperatureforsolderingpurpose(1)1.for10sec.1.6mmfromcase300°CTable3.AvalanchecharacteristicsSymbolParameterMaxvalueUnitIARAvalanchecurrent,repetitiveornot-repetitive(pulsewidthlimitedbyTjmax)40AEASSinglepulseavalancheenergy(startingTj=25°C,ID=IAR,VDD=50V)230mJElectricalcharacteristicsSTB40NF20-STF40NF20-STP40NF20-STW40NF204/172Electricalcharacteristics(TCASE=25°Cunlessotherwisespecified)Table4.On/offstatesSymbolParameterTestconditionsMin.Typ.Max.UnitV(BR)DSSDrain-sourcebreakdownvoltageID=1mA,VGS=0200VIDSSZerogatevoltagedraincurrent(VGS=0)VDS=maxratingsVDS=maxratings@125°C110µAµAIGSSGate-bodyleakagecurrent(VDS=0)VGS=±20V±100nAVGS(th)GatethresholdvoltageVDS=VGS,ID=250µA234VRDS(on)Staticdrain-sourceonresistanceVGS=10V,ID=20A0.0380.045ΩTable5.DynamicSymbolParameterTestconditionsMin.Typ.Max.Unitgfs(1)1.Pulsed:Pulseduration=300µs,dutycycle1.5%.ForwardtransconductanceVDS=15V,ID=20A30SCissCossCrssInputcapacitanceOutputcapacitanceReversetransfercapacitanceVDS=25V,f=1MHz,VGS=0250051078pFpFpFtd(on)trtd(off)tfTurn-ondelaytimeRisetimeTurn-offdelaytimeFalltimeVDD=100V,ID=20ARG=4.7ΩVGS=10V(seeFigure17)20447422nsnsnsnsQgQgsQgdTotalgatechargeGate-sourcechargeGate-drainchargeVDD=160V,ID=40A,VGS=10V(seeFigure18)7513.235.5nCnCnCSTB40NF20-STF40NF20-STP40NF20-STW40NF20Electricalcharacteristics5/17Table6.SourcedraindiodeSymbolParameterTestconditionsMin.Typ.Max.UnitISDISDM(1)1.Pulsewidthlimitedbysafeoperatingarea.Source-draincurrentSource-draincurrent(pulsed)40160AAVSD(2)2.Pulsed:Pulseduration=300µs,dutycycle1.5%ForwardonvoltageISD=20A,VGS=01.5VtrrQrrIRRMReverserecoverytimeReverserecoverychargeReverserecoverycurrentISD=20A,di/dt=100A/µs,VDD=25V(seeFigure19)1929229.6nsnCAtrrQrrIRRMReverserecoverytimeReverserecoverychargeReverserecoverycurrentISD=20A,di/dt=100A/µs,VDD=25V,Tj=150°C(seeFigure19)242144011.9nsnCAElectricalcharacteristicsSTB40NF20-STF40NF20-STP40NF20-STW40NF206/172.1Electricalcharacteristics(curves)Figure2.SafeoperatingareaforTO-220/D2PAKFigure3.ThermalimpedanceareaforTO-220/D2PAKFigure4.SafeoperatingareaforTO-247Figure5.ThermalimpedanceforTO-247Figure6.SafeoperatingareaforTO-220FPFigure7.ThermalimpedanceforTO-220FPSTB40NF20-STF40NF20-STP40NF20-STW40NF20Electricalcharacteristics7/17Figure8.OutputcharacteristicsFigure9.TransfercharacteristicsFigure10.TransconductanceFigure11.Staticdrain-sourceonresistanceFigure12.Gatechargevsgate-sourcevoltageFigure13.CapacitancevariationsElectricalcharacteristicsSTB40NF20-STF40NF20-STP40NF20-STW40NF208/17Figure14.NormalizedgatethresholdvoltagevstemperatureFigure15.NormalizedonresistancevstemperatureFigure16.Source-draindiodeforwardcharacteristicsSTB40NF20-STF40NF20-STP40NF20-STW40NF20Testcircuit9/173TestcircuitFigure17.Switchingtimestestcirc
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