TPC8305中文资料

TPC83052002-04-181TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U−MOSII)TPC8305LithiumIonBatteryApplicationsPortableEquipmentApplicationsNotebookPCsSmallfootprintduetosmallandthinpackageLowdrain−sourceONresistance:RDS(ON)=24mΩ(typ.)Highforwardtransferadmittance:|Yfs|=12S(typ.)Lowleakagecurrent:IDSS=−10µA(max)(VDS=−20V)Enhancement−mode:Vth=−0.5~−1.2V(VDS=−10V,ID=−1mA)MaximumRatings(Ta=25°C)CharacteristicsSymbolRatingUnitDrain-sourcevoltageVDSS−20VDrain-gatevoltage(RGS=20kΩ)VDGR−20VGate-sourcevoltageVGSS±12VDC(Note1)ID−5DraincurrenPulseIDP−20ASingle-deviceoperation(Note3a)PD(1)1.5Drainpowerdissipation(t=10s)(Note2a)Single-devicevalueatdualoperation(Note3b)PD(2)1.0WSingle-deviceoperation(Note3a)PD(1)0.75Drainpowerdissipation(t=10s)(Note2b)Single-devicevalueatdualoperation(Note3b)PD(2)0.45WSinglepulseavalancheenergy(Note4)EAS32.5mJAvalanchecurrent(Note1)IAR−5ARepetitiveavalancheenergySingle-devicevalueatoperation(Note2a,Note3b,Note5)EAR0.10mJChanneltemperatureTch150°CStoragetemperaturerangeTstg−55~150°CNote:For(Note1),(Note2a),(Note2b),(Note3a),(Note3b),(Note4)and(Note5),pleaserefertothenextpage.Thistransistorisanelectrostaticsensitivedevice.Pleasehandlewithcaution.Unit:mmJEDEC―JEITA―TOSHIBA2-6J1EWeight:0.08g(typ.)CircuitConfigurationTPC83052002-04-182ThermalCharacteristicsCharacteristicsSymbolMaxUnitSingle-deviceoperation(Note3a)Rth(ch-a)(1)83.3Thermalresistance,channeltoambient(t=10s)(Note2a)Single-devicevalueatdualoperation(Note3b)Rth(ch-a)(2)125Single-deviceoperation(Note3a)Rth(ch-a)(1)167Thermalresistance,channeltoambient(t=10s)(Note2b)Single-devicevalueatdualoperation(Note3b)Rth(ch-a)(2)278°C/WMarking(Note6)Note1:Pleaseusedevicesonconditionthatthechanneltemperatureisbelow150°C.Note2:a)Devicemountedonaglass-epoxyboard(a)b)Devicemountedonaglass-epoxyboard(b)Note3:a)Thepowerdissipationandthermalresistancevaluesareshownforasingledevice(Duringsingle-deviceoperation,powerisonlyappliedtoonedevice.)b)Thepowerdissipationandthermalresistancevaluesareshownforasingledevice(Duringdualoperation,powerisevenlyappliedtobothdevices.)Note4:VDD=−16V,Tch=25°C(initial),L=1.0mH,RG=25Ω,IAR=−5ANote5:Repetitiverating:pulsewidthlimitedbymaximumchanneltemperatureNote6:●onlowerleftofthemarkingindicatesPin1.※showslotnumber.(yearofmanufacture:lastdecimaldigitoftheyearofmanufacture,monthofmanufacture:JanuarytoDecemberaredenotedbylettersAtoLrespectively.)※TypeTPC8305FR-425.4×25.4×0.8(unit:mm)(a)FR-425.4×25.4×0.8(unit:mm)(b)TPC83052002-04-183ElectricalCharacteristics(Ta=25°C)CharacteristicsSymbolTestConditionMinTyp.MaxUnitGateleakagecurrentIGSSVGS=±10V,VDS=0V——±10µADraincut−offcurrentIDSSVDS=−20V,VGS=0V——−10µAID=−10mA,VGS=0V−20——Drain−sourcebreakdownvoltageV(BR)DSSID=−10mA,VGS=12V−8——VGatethresholdvoltageVthVDS=−10V,ID=−200µA−0.5—−1.2VRDS(ON)VGS=−2.0V,ID=−2.5A—5680mΩRDS(ON)VGS=−2.5V,ID=−2.5A—3850mΩDrain−sourceONresistanceRDS(ON)VGS=−4.5V,ID=−2.5A—2430mΩForwardtransferadmittance|Yfs|VDS=−10V,ID=−2.5A612—SInputcapacitanceCiss—2030—ReversetransfercapacitanceCrss—400—OutputcapacitanceCossVDS=−10V,VGS=0V,f=1MHz—580—pFRisetimetr—25—Turn−ONtimeton—35—Falltimetf—95—SwitchingtimeTurn−OFFtimetoff—200—nsTotalgatecharge(gate−sourceplusgate−drain)Qg—24—Gate−sourcechargeQgs—17—Gate−drain(“miller”)chargeQgdVDD≈−16V,VGS=−5V,ID=−5A—7—nCSource−DrainRatingsandCharacteristics(Ta=25°C)CharacteristicsSymbolTestConditionMinTyp.MaxUnitDrainreversecurrentPulse(Note1)IDRP———−20AForwardvoltage(diode)VDSFIDR=−5A,VGS=0V——1.2VTPC83052002-04-184TPC83052002-04-185TPC83052002-04-186TPC83052002-04-187•TOSHIBAiscontinuallyworkingtoimprovethequalityandreliabilityofitsproducts.Nevertheless,semiconductordevicesingeneralcanmalfunctionorfailduetotheirinherentelectricalsensitivityandvulnerabilitytophysicalstress.Itistheresponsibilityofthebuyer,whenutilizingTOSHIBAproducts,tocomplywiththestandardsofsafetyinmakingasafedesignfortheentiresystem,andtoavoidsituationsinwhichamalfunctionorfailureofsuchTOSHIBAproductscouldcauselossofhumanlife,bodilyinjuryordamagetoproperty.Indevelopingyourdesigns,pleaseensurethatTOSHIBAproductsareusedwithinspecifiedoperatingrangesassetforthinthemostrecentTOSHIBAproductsspecifications.Also,pleasekeepinmindtheprecautionsandconditionssetforthinthe“HandlingGuideforSemiconductorDevices,”or“TOSHIBASemiconductorReliabilityHandbook”etc..•TheTOSHIBAproductslistedinthisdocumentareintendedforusageingeneralelectronicsapplications(computer,personalequipment,officeequipment,measuringequipment,industrialrobotics,domesticappliances,etc.).TheseTOSHIBAproductsareneitherintendednorwarrantedforusageinequipmentthatrequiresextraordinarilyhighqualityand/orreliabilityoramalfunctionorfailureofwhichmaycauselossofhumanlifeorbodilyinjury(“UnintendedUsage”).UnintendedUsageincludeatomicenergycontrolinstruments,airplaneorspaceshipinstruments,transportationinstruments,trafficsignalinstruments,combustioncontrolinstruments,medicalinstruments,alltypesofsafetydevices,etc..UnintendedUsageofTOSHIBAproductslistedinthisdocumentshallbemadeatthecustomer’sownrisk.•Theinformationcontainedhere