X射线光电子能谱在薄膜材料分析中的应用

20091X100875Email:[e-mail]XXPS10nmArXPSXPSXPSXPSARXPS1nc-TiC/a-C:HXPSnc-TiC/a-C:HXPSnc-TiC/a-C:H[1]TiFIV1FXPSC1s281.8eV284.4eV1aTiCa-C:HTi2p3/2454.8eV1bTiCTiTiCC1sF40SCCMC1s2C1sCsp3sp2a-C:HCHRTEM[1]nc-TiC/a-C:HFTiCa-C:H3IT/ICTiC3XPSIVXPS20092275280285290295Intensity(cps)Bindingenergy(eV)Cina-C:H150sccm110sccm70sccm40sccmCinTiCC1sa(a)445450455460465470Intensity(cps)Bindingenergy(eV)Ti2p1/2Ti2p3/2150sccm110sccm70sccm40sccmTi2pb(b)1nc-TiC/a-C:HXPS(a)C1s(b)Ti2p276280284288292500010000150002000025000sp3-Csp2-CTi-CC1sIntensity(cps)Bindingenergy(eV)03060901201501.01.52.02.524680.20.40.6Thickness(μm)C2H2flowrate(sccm)2:Thickness2313:StressStress(GPa)IT/IC1:IT/IC2nc-TiC/a-C:HC1sXPS40sccm3Fnc-TiC/a-C:HTiCa-C:HIT/ICThicknessStress2DLCTiNi2.1DLCDLCDLCMEVVATiNiDLCDLC:TiDLC:Ni20093SEMDLC:TiDLC:Ni18DLC:TiDLC:Ni415nmXPSC1s285.3eV5DLC:TiC1sDLC:NiDLC:TiC1ssp2sp2285.0eVsp3sp3285.8eV5287eVCODLCC1sRaman6TiNiXPS7Ti2p3/2455.3eV7a453.73eVTi454.8TiCNi2p3/2852.3eV7b852.68eVNiNiXPSDLC2.2MEVVADLC:TiDLC:NiXPSArXPSDLC:Ti88Ti11atDLCDLC:Ni(a)(b)300nm300nm2822842862882900500100015002000SP2SP3C-OBindingenergy(eV)Intensity(a.u.)Ni21Ni42Ti2kTi40Ti25Ti4kC200sp3IG/IDIG/IDorISP36RamanGDIG/IDXPSSP320094XPSXPS3SiXPSARXPSSi0.2nm3nmXPS1Ar2XPSARXPSARXPS9ABIAIB[2]05101546810Etchingtime(min)at.%45045546046547047560080010001200140016001800intensity(a.u.)Bindingenergy(eV)455.3461.46.1eV(a)8508608708801500200025003000intensity(a.u.)Bindingenergy(eV)852.3eV(b)7DLC:TiTi2paDLC:NiNi2pbXPSAr200959ARXPS]sin/exp[]sin/exp(1[00θλθλBABBAAAAdIIdII-=--=BAλλλ==BAAA]1)sin/[exp(0-=θλdRR)/(),/(000BABAIIRIIR==BeerLambert[2]XPSXPS3d3d3LSiO2/SiL2.996nmMgKX3.485nmAlKX[3]10ARXPSSi2p104eV100eVSiO2SiSiO2Si1010aMgKR00.9329(AlK0.883)[4]LsiO2Lsi2.996nmd1.8nm10bSiH1.7nm1.2nmARXPSARCTick[2]Si0Si4OOHCArARXPSARXPS[5]dBA2009695100105110115120BindingEnergy/eVθ=90degIntensityθ=60θ=45θ=35θSiSiO2Si2pa1.01.21.41.61.80.81.01.2ln(1+R/R0)1/Sin(q)experimentsimulatinglined/λ=0.60b10ARXPSaARXPSb4XPSXPSXXPD[5]ARXPS[5][2]XPS[5,6]Shakeup[7][8,9]XPSSAXPS[2,10,11,12][1]YaohuiWang,XuZhang,XianyingWuetal.Superhardnanocompositenc-TiC/a-C:Hfilmfabricatedbyfiltercathodicvacuumarctechnique[J].AppliedSurfaceScience,2008,254:5085-5088[2]JohnFWatts,JohnWolstenholme.XPSAES[M],2008[3]M.P.Seah,S.J.Spencer.UltrathinSiO2onSi.VII.AngularaccuracyinXPSandanaccurateattenuationlength[J].Surf.InterfaceAnal.2005;37:731–736[4]M.P.SeahS.J.Spencer.UltrathinSiO2onSiII.Issuesinquantificationoftheoxidethickness[J].Surf.InterfaceAnal.2002;33:640–652[5].[M].:20022009782-108;109-152;402-426[6].XPS/XAES/UPS[M].19928087[7].X[M].1994[8]CDWangeretal.HandbookofX-rayphotoelectronspectroscopy[M].Perkin-ElmerCorporation.1978[9]JohnFMoulderetal.HandbookofX-rayphotoelectronspectroscopy[M],Perkin-ElmerCorporation,1992[10]GBeamsonandDBriggs.HighResolutionXPSofOrganicpolymers[M].JohnWiley&Sons,1992[11]BVincentCrist.HandbookofMonochromaticXPSSpectra[M].JohnWileyandSons,2000[12]DavidBriggsandJohnTGrant.SurfaceAnalysisbyAugerandX-rayPhotoelectronSpectroscopy[M].England:IMPublicationsandSurfaceSpectraLtd,2003