AMS-2N7002

N-CHANNELENHANCEMENTMODEDESCRIPTIONTheAMS2N7002hasbeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage,lowcurrentapplicationssuchassmallservomotorcontrol,powerMOSFETgatedrivers,andotherswitchingapplicationsFEATURES*HighDensityCellDesignforLowRDS(ON).*VoltageControlledSmallSignalSwitch*RuggedandReliable*HighSaturationCurrentCapabilitySYMBOLORDERINGINFORMATIONPinAssignmentOrderingNumberPackage123456Packing2N7002G-AE2-RSOT-23-3SGD---TapeReelMARKINGSOT-23-3SOT-23-3ABSOLUTEMAXIMUMRATINGS(Ta=25°Cunlessotherwisenoted.)PARAMETERSYMBOLRATINGSUNITDrain-SourceVoltageVDSS60VDrain-GateVoltage(RGS≤1MΩ)VDGR60VContinuous±20GateSourceVoltageNonRepetitive(tp50μs)VGSS±40VContinuous300DrainCurrentPulsedID800mAPowerDissipationDeratedAbove25°CPD2001.6mWmW/°CJunctionTemperatureTJ+150°CStorageTemperatureTSTG-55~+150°CNote:Absolutemaximumratingsarethosevaluesbeyondwhichthedevicecouldbepermanentlydamaged.Absolutemaximumratingsarestressratingsonlyandfunctionaldeviceoperationisnotimplied.THERMALCHARACTERISTICSPARAMETERSYMBOLRATINGSUNITJunctiontoAmbientθJA625°C/WELECTRICALCHARACTERISTICS(TA=25°C,unlessotherwisespecified)PARAMETERSYMBOLTESTCONDITIONSMINTYPMAXUNITOFFCHARACTERISTICSDrain-SourceBreakdownVoltageBVDSSVGS=0V,ID=10μA60VDrain-SourceLeakageCurrentIDSSVDS=60V,VGS=0V1μAIGSSFVGS=20V,VDS=0V100nAGate-SourceLeakageCurrentIGSSRVGS=-20V,VDS=0V-100nAONCHARACTERISTICS(Note)GateThresholdVoltageVGS(TH)VGS=VDS,ID=250μA12.12.5VVGS=10V,ID=500mA0.63.75Drain-SourceOn-VoltageVDS(ON)VGS=5.0V,ID=50mA0.091.5VOn-StateDrainCurrentID(ON)VGS=10V,VDS≥2VDS(ON)5002700mAVGS=10V,ID=500mA1.23.5ΩStaticDrain-SourceOn-ResistanceRDS(ON)VGS=5.0V,ID=50mA1.77.5ΩDYNAMICCHARACTERISTICSInputCapacitanceCISSVDS=25V,VGS=0V,f=1.0MHz2050pFOutputCapacitanceCOSS1125pFReverseTransferCapacitanceCRSS45pFTurn-OnTimetONVDD=30V,RL=150ΩID=200mA,VGS=10VRGEN=25Ω20nSTurn-OffTimetOFFVDD=30V,RL=25ΩID=200mA,VGS=10VRGEN=25Ω20nSDRAIN-SOURCEDIODECHARACTERISTICSANDMAXIMUMRATINGSDrain-SourceDiodeForwardVoltageVSDVGS=0V,Is=115mA(Note)0.881.5VMaximumPulsedDrain-SourceDiodeForwardCurrentISM0.8AMaximumContinuousDrain-SourceDiodeForwardCurrentIs115mANote:PulseTest:PulseWidth≤300μs,DutyCycle≤2.0%TESTCIRCUITANDWAVEFORMFigure1VGSRGENVDDVINRLVOUTDUTGDSPulseWidthInput,VinOutput,Vouttontofftd(off)trtd(on)tfInverted10%10%10%50%50%90%90%90%Figure2.SwitchingWaveformsTYPICALCHARACTERISTICS0543211.510.5023.0V21.61.20.80.4VGS=4.0V32.521.5100.5Drain-SourceCurrent,ID(A)Drain-SourceVoltage,VDS(V)VGS=10V4.0V5.0V6.0V7.0V8.0V9.0VOn-ResistanceCharacteristicsNormalizedDrain-SourceON-Resistance,RDS(ON)DrainCurrent,ID(A)On-ResistanceVarisationwithGateVoltageandDrainCurrent4.5V5.0V6.0V7.0V8.0V9.0V10V100750-2521.51-500.51.61.20.80.4VGS=10V32.521.5100.525501501250.751.251.7520TJ=125℃25℃NormalizedDrain-SourceON-Resistance,RDS(ON)JunctionTemperature,TJ(°C)On-ResistanceVarisationwithTemperatureVGS=10VID=500mANormalizedDrain-SourceON-Resistance,RDS(ON)DrainCurrent,ID(A)On-ResistanceVarisationwithDrainCurrentandTemperature0108642100750-25-5025501251.61.21.80.4201501.11.0510.950.90.850.8DrainCurrent,ID(A)GatetoSourceVoltage,VGS(V)TransferCharacteristicsVDS=10V25℃125℃NormalizedGate-SourceThresholdVoltage,VGS(TH)JunctionTemperature,TJ(°C)GateThresholdVarisationwithTemperatureVGS=VDSID=1mATYPICALCHARACTERICS(Cont.)100750-251.11.051-500.92511.20.80.410.50.10.050.010.20.00525501501250.951.0251.0751.40.0010.9750.62NormalizedDrain-SourceBreakdownVoltage,BVDSSJunctionTemperature,TJ(°C)BreakdownVoltageVarisationwithTemperatureID=250μABodyDiodeForwardVoltage,VSD(V)BodyDiodeForwardVoltageVarisationwithTemperatureReverseDrainCurrent,IS(A)VGS=0VTJ=125℃25℃Capacitance(pF)Gate-SourceVoltage,VGS(V)DrainCurrent,ID(A)NormalizedEffectiveTransientThermalResistance,r(t)Disclaimer:•AMSreservestherighttomakechangestotheinformationhereinfortheimprovementofthedesignandperformancewithoutfurthernotice!Customersshouldobtainthelatestrelevantinformationbeforeplacingordersandshouldverifythatsuchinformationiscompleteandcurrent.•Allsemiconductorproductsmalfunctionorfailwithsomeprobabilityunderspecialconditions.WhenusingAMSproductsinsystemdesignorcompletemachinemanufacturing,itistheresponsibilityofthebuyertocomplywiththesafetystandardsstrictlyandtakeessentialmeasurestoavoidsituationsinwhichamalfunctionorfailureofsuchAMSproductscouldcauselossofbodyinjuryordamagetoproperty.•AMSwillsupplythebestpossibleproductforcustomers!