集成电路工艺和版图设计参考

07.07.2020JianFang1集成电路工艺和版图设计概述JianFangICDesignCenter,UESTC07.07.2020JianFang2微电子制造工艺07.07.2020JianFang3IC常用术语园片：硅片芯片(Chip,Die)：6、8：硅（园）片直径：1＝25.4mm6150mm;8200mm;12300mm;亚微米1m的设计规范深亚微米=0.5m的设计规范0.5m、0.35m－设计规范（最小特征尺寸）布线层数：金属（掺杂多晶硅）连线的层数。集成度：每个芯片上集成的晶体管数07.07.2020JianFang4IC工艺常用术语净化级别：Class1,Class10,Class10,000每立方米空气中含灰尘的个数去离子水氧化扩散注入光刻…………….07.07.2020JianFang5生产工厂简介PSI07.07.2020JianFang6FabTwowascompletedJanuary2,1996andisaStateoftheArtfacility.This2,200squarefootfacilitywasconstructedusingallthelatestmaterialsandtechnologies.Inthissetofcleanroomswechangetheair390timesperhour,ifyoudothemathwithULPAfiltrationthisisaClassOnefacility.WehavehadittestedanditdoesmeetClassOneparameters(withoutanypeopleworkinginit).Sincewearenotmakingmicroprocessorshereandwedon'twanttowearspacesuits,werunitasaclass10fab.EventhoughitconsistentlyrunswellbelowClassTen.07.07.2020JianFang7HereintheFabTwoPhotolithographyareaweseeoneofour200mm.35micronI-LineSteppers.thissteppercanimageandalignboth6&8inchwafers.07.07.2020JianFang8AnotherviewofoneoftheFabTwoPhotolithographyareas.07.07.2020JianFang9Hereweseeatechnicianloading300mmwafersintotheSemiTool.Thewafersareina13waferTefloncassetteco-designedbyProcessSpecialtiesandSemiToolin1995.Againthesearetheworld'sfirst300mmwetprocesscassettes(thatcanbespinrinsedried).07.07.2020JianFang10AswelookinthiswindowweseetheWorld'sFirsttrue300mmproductionfurnace.Ourdevelopmentanddesignofthistoolbeganin1992,itwasinstalledinDecemberof1995andbecamefullyoperationalinJanuaryof1996.07.07.2020JianFang11Herewecanseetheloadingof300mmwafersontothePaddle.07.07.2020JianFang12ProcessSpecialtieshasdevelopedtheworld'sfirstproduction300mmNitridesystem!Webeganprocessing300mmLPCVDSiliconNitrideinMayof1997.07.07.2020JianFang132,500additionalsquarefeetofStateoftheArtClassOneCleanroomiscurrentlyprocessingwafers!Withincreased300mm&200mmprocessingcapabilitiesincludingmorePVDMetalization,300mmWetprocessing/Cleaningcapabilitiesandfullwafer300mm.35umPhotolithography,allinaClassOneenviroment.07.07.2020JianFang14CurrentlyourPS300AandPS300Bdiffusiontoolsarecapableofrunningboth200mm&300mmwafers.Wecanevenprocessthetwosizesinthesamefurnaceloadwithoutsufferinganyuniformityproblems!(ThermalOxideOnly)07.07.2020JianFang15AccuracyinmetrologyisneveranissueatProcessSpecialties.Weusethemostadvancedroboticlaserellipsometersandothercalibratedtoolsforprecisionthinfilm,resistivity,CDandstepheightmeasurement.IncludingournewNanometrics8300fullwafer300mmthinfilmmeasurementandmappingtool.WealsouseoutsidelaboratoriesandourexcellentworkingrelationshipswithourMetrologytoolcustomers,foradditionalcorrelationandcalibration.07.07.2020JianFang16OneoftwoSEMLabslocatedinourfacility.InthisoneweareusingafieldemissiontoolforeverythingfromlookingatphotoresistprofilesandmeasuringCD'stodoublecheckingmetaldepositionthicknesses.Atthehelm,anotheroneofourprocessengineersyoumayhavespokenwithMarkHinkle.07.07.2020JianFang17HerewearelookingattheIncomingmaterialdispositionracks07.07.2020JianFang18AboveyouarelookingatacoupleofviewsofthefacilitiesonthewestsideofFabOne.Hereyoucanseeoneofour18.5Meg/OhmDIwatersystemsandoneoffour10,000CFMairsystemsfeedingthisfab(leftpicture),aswellasoneofourwasteairscrubberunits(rightpicture).Bothareinsidethebuildingforeasiermaintenance,longerlifeandbettercontrol.07.07.2020JianFang19集成电路（IntegratedCircuit,IC）：半导体IC，膜IC，混合IC半导体IC：指用半导体工艺把电路中的有源器件、无源元件及互联布线等以相互不可分离的状态制作在半导体上，最后封装在一个管壳内，构成一个完整的、具有特定功能的电路。半导体IC双极ICMOSICBiCMOSPMOSICCMOSICNMOSIC07.07.2020JianFang20MOSIC及工艺MOSFET—MetalOxideSemiconductorFieldEffectTransistor.—金属氧化物半导体场效应晶体管Si金属氧化物（绝缘层、SiO2）半导体MOS(MIS)结构07.07.2020JianFang21P－衬底n+n+漏源栅栅氧化层氧化层沟道GDSVTVGSIDVDS0反型层沟道源（Source）S漏（Drain）D栅（Gate）G栅氧化层厚度：50埃－1000埃（5nm－100nm）VT－阈值电压电压控制N沟MOS（NMOS）•P型衬底，受主杂质；•栅上加正电压，表面吸引电子，反型，电子通道；•漏加正电压，电子从源区经N沟道到达漏区，器件开通。07.07.2020JianFang22N－衬底p+p+漏源栅栅氧化层场氧化层沟道P沟MOS（PMOS）GDSVTVGSID+-VDS0•N型衬底，施主杂质，电子导电；•栅上加负电压，表面吸引空穴，反型，空穴通道；•漏加负电压，空穴从源区经P沟道到达漏区，器件开通。07.07.2020JianFang23CMOS•CMOS：ComplementarySymmetryMetalOxideSemiconductor互补对称金属氧化物半导体－特点：低功耗VSSVDDVoViCMOS倒相器PMOSNMOSI/OI/OVDDVSSCCCMOS传输门07.07.2020JianFang24N-SiP+P+n+n+P-阱DDVoVGVSSSSVDDCMOS倒相器截面图CMOS倒相器版图07.07.2020JianFang25pwellactivepolyN+implantP+implantomicontactmetalANMOSExample07.07.2020JianFang26pwellPwellActivePolyN+implantP+implantOmicontactMetal07.07.2020JianFang27N－typeSiSiO2光刻胶光MASKPwell07.07.2020JianFang28N－typeSiSiO2光刻胶光刻胶MASKPwell07.07.2020JianFang29N－typeSiSiO2光刻胶光刻胶SiO207.07.2020JianFang30N－typeSiSiO2SiO2Pwell07.07.2020JianFang31pwellactivePwellActivePolyN+implantP+implantOmicontactMetal07.07.2020JianFang32N－typeSiSiO2PwellSiO2光刻胶MASKactiveMASKActiveSi3N407.07.2020JianFang33N－typeSiSiO2PwellSiO2光刻胶光刻胶MASKactiveMASKActiveSi3N407.07.2020JianFang34N－typeSiSiO2PwellSiO2光刻胶光刻胶Si3N407.07.2020JianFang35N－typeSiSiO2PwellSiO2场氧场氧场氧PwellSi3N407.07.2020JianFang36N－typeSiSiO2Pwell场氧场氧场氧Pwell07.07.2020JianFang37N－typeSiSiO2PwellSiO2场氧场氧场氧Pwellpoly07.07.2020JianFang38activepwellpolyPwellActivePolyN+implantP+implantOmicontactMetal07.07.2020JianFang39N