MEMS和半导体工艺中的湿法腐蚀配方

苏州能斯达电子科技有限公司MEMS和半导体工艺材料配比苏州能斯达电子科技有限公司的工程师整理了MEMS和半导体工艺中接近50种材料的湿法腐蚀的刻蚀液及配比，趁着新年，给大家送一份豪华大礼包。1.铝-Aluminum2.砷化铝镓-AluminumGalliumArsenide1.1:1:30–H2SO4:H2O2–60Å/sec2.8:3:400–NH3:H2O2:H2O–25Å/sec3.1:1:10–HF:H2O2:H2o–80Å/sec苏州能斯达电子科技有限公司3.三氧化二铝/铝/蓝宝石-AluminumTrioxide/Alumina/Sapphire1.1:1:3–NH4OH:H2O2:H2O–80℃2.10%Br2:MeOH3.7ml:4g–H3PO:Cr2O34.锑-Antimony1.1:1:1–HCl:HNO3:H2O2.90:10:1–H2O:HNO3:HF3.3:3:1:1–H3PO4:HNO3:CH3COOH:H2O3min/1000A50℃5.铋-Bismuth1.10:1–H2O:HCl6.黄铜-Brass1.FeCl32.20%NHSO57.青铜-Bronze1.1%CrO38.碳-Carbon1.H3PO4:CrO3:NaCN2.50%KOH(orNaOH)–boiling3.HNO3concentrated4.H2SO4concentrated5.3:1–H2SO4:H2O2苏州能斯达电子科技有限公司9.铬-Chromium1.2:3:12KMnO4:NaOH:H2O2.3:1–H2O:H2O23.HClconcentratedanddilute4.3:1–HCl:H2O25.2:1–FeCl:HCl6.CyantekCR-7s(Perchloricbased)7min/micron(24A/snew)7.1:1–HCl:glycerine12min/micronafterdepassivation8.1:3–[50gNaOH+100mlH2O]:[30gK3Fe(CN)6+100mlH2O]1hr/micron10.钴-Cobalt1.1:1H2O:HNO32.3:1HCl:H2O211.铜-Copper1.30%FeCl3saturatedsolution2.20%KCN3.1:5–H2O:HNO34.HNO3concentratedanddilute5.1:1–NH4OH:H2O26.1:20–HNO3:H2O27.4:1–NH3:H2O28.1:1:1–H3PO4:HNO3:HAc苏州能斯达电子科技有限公司9.5ml:5ml:4g:1:90ml–HNO3:H2SO4:CrO3:NH4Cl:H2O10.4:1:5–HCL:FeCl3:H2O12.环氧树脂-Epoxies1.GeneralPolymerEtch2.5:1–NH4OH:H2O2–120℃3.GoldEpoxy4.3:1:10HNO3:HCl:H2O5.SilverEpoxy6.1:3–HF:HNO37.AluminumEpoxy8.H2SO4–hot9.SU8cured10.3:1–H2SO4:H2O2–hot13.砷化镓-GalliumArsenide1.1.5%-7.5%–Br2inCH3OH2.1:1–NH4OH:H2O23.20:7:973–NH4OH:H2O2:H2O4.40:1:40–H3PO4:H2O2:H2O5.3:1:50–H3PO4:H2O2:H2O6.33-66%–HNO3–redfumingetchesmorerapidlythanwhitefuming7.1:1–HF:HNO3苏州能斯达电子科技有限公司8.1:1–H2SO4:H2O29.1:1:30–H2SO4:H2O2–60Ås/sec10.8:3:400–NH3:H2O2:H2O–30Ås/sec,isotropic11.1:1:10–HF:H2O2:H2o–80Ås/sec14.锗-Germanium1.HF:HNO3:H2O2.1:1:1–HF:HNO3:HAc3.7:1:xHF:HNO3:glycerin35c75-100microns/hour,100℃775microns/hour4.KF–pH65.1:25NH3OH:H2O21000Å/min15.金-Gold1.AquaRegia3:1–HCl:HNO310-15microns/minRT,25-50microns/min35℃2.ChromeRegia3:10-20%HCl:CrO33.H2SeO4–Tempshouldbehot,etchisslow4.KCNinH20–goodforstrippinggoldfromalumina,quartz,sapphiresubstrates,semiconductorwafersandmetalparts5.4g:2g:10ml–KI:I2:H2OHot(70℃)280nm/min6.1:2:3–HF:HAc:HNO37.30:30:50:0.6–HF:HNO3:HAc:Br28.NaCN:H2O2苏州能斯达电子科技有限公司9.7g:25:g:100ml–KI:Br2:H2O10.9g:1g:50ml–KBr:Br2:H2O800nm/min11.9g:1g:50ml–NaBr:Br2:H2O400nm/min12.400g:100g:400ml–I2:KI:H2O55℃1270Ås/sec13.1:2:10–I2:KI:H2O14.Aumasketch4g:1g:40ml–KI:I2:H2O1min/micron16.铪-Hafnium1.20:1:1–H2O:HF:H2O217.铟-Indium1.AquaRegia3:1–HCl:HNO3hot2.HClboiling,fast3.IPA4.EOH5.MeOH6.RareEarthIndiumEtchants18.砷化铟镓-IndiumGalliumArsenide1.1:1:20–H2SO4:H2O2:H2O–30Ås/sec19.镓铟磷-IndiumGalliumPhosphide1.concHCl–fast20.磷化铟-IndiumPhosphide1.1:1–HCl:H3PO4–fast21.磷化铟氧化物腐蚀剂-IndiumPhosphideOxideEtchants苏州能斯达电子科技有限公司1.NH4OH22.ITO-IndiumTinOxide1.1:1–HCl:H2O8Ås/sec2.1:1:10–HF:H2O2:H2O125Ås/sec23.铱-Iridium1.AquaRegia3:1–HCl:HNO3hot24.铁-Iron1.1:1–H2O:HCL2.1:1–H2O:HNO33.1:2:10–I2:KI:H2O25.铅-Lead1.1:1–HAc:H2O226.镁-Magnesium1.10ml:1g–H2O:NaOHfollowedby5ml:1g–H2O:CrO327.钼-Molybendum1.1:1–HCl:H2O228.镍-Nickel1.1:1:1–HNO3:HAc:Acetone2.1:1–HF:HNO33.30%FeCl34.3:1:5:1–HNO3:H2SO4:HAc:H2O85C10microns/min5.3:7–HNO3:H2O苏州能斯达电子科技有限公司6.1:1–HNO3:HAc7.10%g/mlCe(NH4)2(NO3)6:H208.HF,concentrated–slowetchant9.H3PO4–slowetchants10.HNO3–rapidetchant11.HF:HNO3–etchratedeterminedbyratio,thegreatertheamountofHFtheslowerthereaction12.4:1–HCl:HNO3–increaseHNO3concentrationincreasesetchrate13.30%FeCl314.5g:1ml:150ml–2NH4NO3.Ce(NO3)3.4(H2O):HNO3:H2O–decreasingHNO3amountincreasestheetchrate15.3:3:1:1–H3PO4:HNO3:CH3COOH:H2O~15min/micron@RTwithairexposureevery15seconds29.铌-Niobium1.1:1–HF:HNO330.钯-Palladium1.AquaRegia3:1–HCl:HNO3hot31.光刻胶-Photoresist(AZtype)1.GeneralPolymer2.5:1–NH4OH:H2O2–120℃3.5:1–H2SO4:H2O2苏州能斯达电子科技有限公司4.H2SO4:(NH4)2S2O85.Acetone32.铂-Platinum1.AquaRegia3:1–HCl:HNO3Hot2.MoltenSulfur33.聚合物-Polymer1.5:1–NH4OH:H2O2–120℃2.3:1–H2SO4:H2O234.聚合物-Polymer1.1:1–HF:H2O2.1:1–HF:HNO33.SodiumCarbonateboiling4.HFconc35.铼、铑和钌-Rhenium,RhodiumandRuthenium1.AquaRegia3:1–HCl:HNO3–Hot36.硅-Silicon1.64:3:33–HNO3:NH4F:H2O100Ås/s2.61:11:28–ethylenediamine:C6H4(OH)2:H2O78Ås/s3.108ml:350g:1000ml–HF:NH4F:H2Oslow0.5Ås/min4.1:1:50–HF:HNO3:H2Oslowetch5.KCldissolvedinH2O6.KOH:H2O:Br2/I2苏州能斯达电子科技有限公司7.KOH–seesectiononKOHetchingofsilicon8.1:1:1.4:0.15%:0.24%–HF:HNO3:HAc:I2:triton9.1:6:3–HF:HNO3:HAcand0.19gNaIper100mlsolution10.1:4–IodineEtch:HAc11.0.010NNaI12.NaOH13.HF:HNO314.1:1:1–HF:HNO3:H2O37.二氧化硅/石英/玻璃-SiliconDioxide/Quartz/Glass1.BOE1:5:5HF:NH4HF:H2O20Ås/s2.HF:HNO33.3:2:60HF:HNO3:H202.5Ås/secatRT4.BHF1:10,1:100,1:20HF:NH4F(sat)5.Seccoetch2:1HF:1.5MK2Cr2O76.5:1NH4.HF:NaF/L(ingrams)7.1g:1ml:10ml:10mlNH4F.HF:HF:H2O:glycerin8.HF–hot9.1:11:15,1:100HF:H2O10.BOEHF:NH4F:H2O11.1:6BOE:H2O12.5:43,1:6HF:NH4F(40%)13.NaCO3100℃8.8mm/h苏州能斯达电子科技有限公司14.5%NaOH100℃150mm/h15.5%HCl95℃0.5mm/day16.KOHseeKOHetchingofsilicondioxideandsiliconnitride38.氮化硅-SiliconNitride1.1:60or1:20HF:H2O1000-2000Ås/min2.BHF1:2:2HF:NH4F:H2Oslowattack–butfasterforsiliconoxynitride3.1:5or1:9HF:NH4F(40%)0.01-0.02microns/second4.3:25HF:NH4F.HF(sat)5.50ml:50g:100ml:50mlHF:NH4F.HF:H2O:glyc