MBR60100CT中文资料

Features•PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0•Dualrectifierconstruction,positivecentertap•Metalsiliconjunction,majoritycarrierconduction•Lowleakagecurrent,Lowpowerloss,Highefficiency•Guardringforovervoltageprotection•Foruseinhighfrequencyinverters,freewheeling,andpolarityprotectionapplicationsMechanicalDataCase:JEDECTO-220ABmoldedplasticbodyTerminals:Platedleads,solderableperMIL-STD-750,Method2026Hightemperaturesolderingguaranteed:250°C/10seconds,0.25(6.35mm)fromcase(TO-220AB)atterminalsPolarity:AsmarkedMountingPosition:AnyMountingTorque:10in-lbsmaximumWeight:0.08oz.,2.24gMBR60100CTVishaySemiconductorsformerlyGeneralSemiconductorDocumentNumber88892°CTO-220AB(MBR60100CT)0.398(10.10)0.382(8.70)0.523(13.28)0.507(12.88)0.185(4.70)0.169(4.30)0.024(0.60)0.018(0.45)0.114(2.90)0.106(2.70)0.634(16.10)0.618(15.70)0.055(1.40)0.047(1.20)0.154(3.90)0.138(3.50)0.150(3.80)0.139(3.54)0.118(3.00)Typ.0.067(1.70)Typ.0.100(2.54)Typ.0.331(8.40)Typ.0.343(8.70)Typ.0.200(5.08)Typ.0.056(1.42)0.064(1.62)0.028(0.70)0.035(0.90)0.055(1.40)0.049(1.25)0.102(2.60)0.087(2.20)1.161(29.48)1.105(28.08)0.638(16.20)0.598(15.20)Dia.0.370(9.40)0.354(9.00)123PINCASEPIN2PIN1PIN3Dimensionsininchesand(millimeters)MaximumRatingsandThermalCharacteristics(TC=25°Cunlessotherwisenoted)ParameterSymbolMBR60100CTUnitMaximumrepetitivepeakreversevoltageVRRM100VWorkingpeakreversevoltageVRWM100VMaximumDCblockingvoltageVDC100VMaximumaverageforwardrectifiedcurrentTotaldevice60PerlegIF(AV)30APeakforwardsurgecurrent8.3mssinglehalfsine-wavesuperimposedIFSM350AonratedloadperlegPeakrepetitivereversecurrentperlegattp=2µs,1KHZIRRM1.0APeaknon-repetitivereversesurgeenergyperlegERSM25mJ(8/20µswaveform)Non-repetitiveavalancheenergyperlegat25°C,IAS=1.0A,L=40mHEAS20mJVoltagerateofchange(ratedVR)dv/dt10,000V/µsOperatingjunctionandstoragetemperaturerangeTJ,TSTG–65to+175°CTypicalthermalresistanceperlegRΘJC0.5°C/WElectricalCharacteristics(TC=25°Cunlessotherwisenoted)ParameterSymbolTyp.Max.UnitMaximuminstantaneousIF=30A,TC=25°C0.780.82forwardvoltageperlegat(1):IF=30A,TC=125°C0.640.69IF=60A,TC=25°CVF0.921.0VIF=60A,TC=125°C0.780.83MaximumreversecurrentperlegTJ=25°C8.0100µAatworkingpeakreversevoltageTJ=125°CIR8.520mANotes:(1)Pulsetest:300µspulsewidth,1%dutycycleMBR60100CTVishaySemiconductorsformerlyGeneralSemiconductor–TypicalInstantaneousForwardCharacteristicsPerLegIR--InstantaneousReverseCurrent(µA)TransientThermalImpedance(°C/W)JunctionCapacitance(pF)110100100100000.1Fig.5–TypicalJunctionCapacitancePerLegVr,ReverseVoltage(V)20100406080Fig.4–TypicalReverseCharacteristicsPerLegFig.6–TypicalTransientThermalImpedanceInstantaneousForwardVoltage(V)PercentofRatedPeakReverseVoltage(%)t,PulseDuration(sec.)IF--InstantaneousForwardCurrent(A)0203040506070255075100125150175Fig.1–ForwardDeratingCurveAverageForwardCurrent(A)CaseTemperature(°C)0.10.10.0111100100200300110100Fig.2–MaximumNon-RepetitivePeakForwardSurgeCurrentPerLegNumberofCyclesat60HZAverageForwardCurrent(A)100010400100000100000001030507090100TJ=175°C150°C125°C25°CTJ=175°C125°C150°C25°C