半导体量子点及其应用

()3­(100083),,.,,,,.:;.,,,,SemiconductorquantumdotsandtheirpotentialapplicationsZHAOFeng2AiZHANGChun2LingWANGZhan2Guo­(KeyLabofSemiconductorMaterialsScience,InstituteofSemiconductors,ChineseAcademyofSciences,Beijing100083,China)AbstractQuantumdots,usuallycalledartificiallymadeatoms,areoneofthemostimportantsubjectsofnanometerscienceandtechnology.Thesuperiorpropertiesofsemiconductorquantumdotsresultingfromthethree2di2mensionalconfinementofthecarrierconstitutethebasisofquantumdevicesandcircuits.Theresearchanddevelop2mentaswellasapplicationofsemiconductorquantumdotsareexpectedtoattractmoreandmoreattentionandgreatlyinfluncenanometerelectronicsandoptoelectronics,photonandquantumcomputingandeventhelifesciences.Inthisarticlethefabricationandpropertiesofsemiconductorquantumdotsandpotentialapplicationofthedevicesbasedonquantumdotsarebrieflyreviewed.Keywordsquantumdot,preparation,character,detection,application3(:90101004,60290081)(:G2000068303)(:2002AA311070)2003-05-15,2003-09-22­.E2mail:[e-mail]11970,[1],.,,.(x,y),(z),.,,;,.,,,,.,,,942.(),,,,,,.,..2,,.,,,..2.1,Stranski-Krastanow(S-K),;(MBE)(MOCVD)(ALE).S-K,,,,,(wettinglayer).,,tc,,.,,,.,,;,,.---,GaAs,InP,SiC,ZnSe,Al2O3SiInAs,In(Ga,Al)As,GaN,CdSe,ZnO,GeGeSi.,.1InPInAs(TEM).(),.1InPInAsTEM[2],,,;,,.,.,(2),,,,,.()().2,,.,GaAsInGaAsInPIn(Ga)As(),,(),,052,,,InAs/GaAsInAs/InGaAs()(3).InAlAsInPInAs,InAl,InAlAsInAl,()In(),[11-0],,,(4).2(311)BGaAsInAlGaAs()()InGaAsAFM[3]3InAs/InGaAs/InP()TEM[4]4InAs/InAlAs/InPTEM[5](),(),,().(100)GaAsInAlGaAs,In2GaAs[011-],InGaAs;(511)B,InAlGaAs,InGaAs,;InAlGaAs,In2GaAs[011-]45[3].2.2,,,,.,.,:(1)[6].MBEMOCVD,GaAs/AlGaAs,,,().,10nm,,,;,,.,.,,.GaAs-AlGaAs,,,.5[7],GaAs-AlGaAs.AlGaAs,,.,-,,.,15233(2004)45[7]..,,,.(2).,,,.,VT,,,()[811](6);SiO2,,,,[12,13];,,,[14,15],,,.6110SiGeAFM[11],,,,.,,Ge[16];SiNx[17][18,19],[20][21],().()(7);,,,,().7SiSEM[19]2.3,.sf+i,s,f,i,,;sf+i,.(),As,SbSn,,.,MOCVDAlxGa1-xN(x=00.2)GaN,;,GaN,,,GaN,8.,Ge/Si,,.2.4--(VLS)2528AlGaN,GaN[22]VLS:,(),,,.,GaN/AlGaN/SiC,GaN/6H-SiC(0001)[23],Si/SiO2,ZnO,SnO2,InAs/InPInAs/GaAs().2.52030,,,,.,,.,SiSiO2,100kVSi.SiSiO2SiO,SiO2SiO,SiOx(x2).N2,Si[24],Si.,.,MOCVD,(a-Al2O3)GaN,,5108cm-26109cm-2,40nmGaN.GaN,.GaN?,,,GaN,[25].,.[2629].GaN,ZnO,TiO2,SiC,Cu2O,CdSCdSe,.:210nm,5%10%,,,,,.,,.33.1(),,,.3.1.1,.,.,,,,,.,,.,,,,,,.Asaoka[30]PLAlGaAsInAs,60eV35233(2004)4PL,.3.1.2,.,[31],,,.,.,[32]A1+A22=A21+A22+A1A2cos(1-2),(6),,;,,,.,,.,,,I-V.,.,,,.3.1.3(10-18F),,kBT,,(Coulombblockade).,.,.,,1.210-5e/Hz1/2,10-4.3.1.4,(In(Ga)As/GaAs),,,.,,,,,,,.,650,InAs/GaAs,,(In)()(Ga);,InGa,.InxGa1-xAs/GaAs,Inx,In,,InGa;,In,.InAs/GaAs[33],,,,.,,,,.,,,,.,.3.2[6],,.()().(1):.(STM)(AFM)(SEM).,STM,;,AFM4520.01nm0.1nm,AFM,(AFM2060nm),,[5].(),(RHEED)X[34,35].,(HRTEM)0.1nm,.(RDS),,.(2):(),,;,.,GaAsInAs,InGaAs,,.,XSTMTEM.(3):(PL)(CL).PL,,,,.,1,,,PL.,PLEL,,.,().Toda[35]InAsPL,10T,.(4):,.,.,STMAFM,;(DLTS);[37];/,,.[1]EsakiL,TsuR.IBMJResDev.,1970,14:467[2]LiF,WangJZ,YeXLetal.J.App.Phys.,2001,89:4186[3].B9780136.01.:,2000.50[JiangWH.Doctorthesis,B9780136.01.Beijing:InstituteofSemiconductors,ChineseAcademyofSci2ences,2000.50(inChinese)][4].,B9880136.17.:,2001.72[LiYF.Doctorthesis,B9880136.05.Beijing:InstituteofSemiconductors,ChineseAcademyofSciences,2001.72(inChinese)][5].,B9780136.05.:,2000.51[SunZZ.Doctorthesis,B9780136105.Beijing:InstituteofSemiconductors,ChineseAcademyofSci2ences,2000.51(inChinese)][6]..2002,1:9[WangZG.Micronano2electronicTechnology,2000,1:9(inChinese)][7]..,2003.217[ZhuJetal.NanomaterialsandNano2device.Beijing:PublishingCom2panyofQinghuaUniverstity,2003.217(inChinese)][8]JÊrgFricke,RichardNÊtzel,UweJahnetal.J.Appl.Phys.,1999,85:3576[9].,B9580136-14.:,1999.47[JiangC.Doctorthesis,B9580136-14.Beijing:InstituteofSemiconductors,ChineseAcademyofSci2ences,1999.47(inChinese)][10]KonkarA,MadhukarA,ChenP.Appl.Phys.Lett.,1998,72:220[11]JinG,LiuJL,ThomasSGetal,Appl.Phys.Lett.,1999,75:2752[12]KumarShiralagi,RuthZhang,RaymondTsui.J.Cryst.Growth,1999,201/202:1209[13]CheolKooHahn,YoungJuPark,EunKyuKimetal.Appl.Phys.Lett.,1998,73:2479[14]ShigeruKohmoto,HitoshiNakamura,TomonoriIshikawaetal.Appl.Phys.Lett.,1999,75:3488[15]HyonCK,ChoiSC,SongSH.Appl.Phys.Lett.,2000,77:2607[16].,2001,22:1116[WangYD.ChineseJournalofSemicondutors,2001,22:1116(inChinese)]55233(2004)4[17]UmedaT,KumakuraK,MotohisaJetal.PhysicaE,1998,2(14):714[18]MeiX,KimD,RudaHE.Appl.Phys.Lett.,2002,81:361[19]LiangJY,ChikH,YinAJetal.J.Appl.Phys.,2002,91:2544[20]JiwoongPark,PaulLMcEuen.Appl.Phys.Lett.,2001,79:1363[21]ChenW,WangZG,LinZJetal.Appl.Phys.Lett.,1996,68:1990[22]SatoruTanaka,SohachiIwai,YoshinobuAoyagi.Appl.Phys.Lett.,1996,69:4096[23]HuCW,BellA,PonceFAetal.Appl.Phys.Lett.,2002,81:3236[24],,.,1999,11:231[WangZP,DingK,HanHXetal.JournalofLightScattering,1999,11:231(inChinese)][25],,.,1998,8:5[ChenP,ShenB,WangMetal.HighTechnologyCommunication,1998,8:5(inChinese)][26]DuanXL,YuanDR,SunZHetal.J.Cryst.Growth,2003,252:311[27]ZhangBL,ChenBS,ShiKYetal.Appl.CatalysisB:Environ2mental,2003,40:253[28]LiJG,KouXL,QinYetal.J.Appl.Phys.,2002,92:7504[29]HauptM,Miller