MOSFET浅析

1MOSFETBVDSS(V)BVDSS1BVDSSMOSFETMOSFETBVDSSBVDSSBVDSSBVDSSID(A)@25:1.NBVDSS252RDS(on)PdSFP50N0660V50ARth(j-c)=1.15Tc=2.(Tj)=150Rds(on)=Tj=150IDM(A):IDM(A)250ID(A)IDM(A)VDS-IDIDM(A)Rds(on)Pd(max)2VGS(V)VGS2030Vgs(V)10VMOSFET(RDS(on))Eas(mJ)MOSFETMOSFETMOSFET(VDS)MOSEFTVDSMOSFETMOSFETEas(mJ)IAR(A)/EAR(mJ)/IARID(A)EAR(25)100(EAR)MOSFETAvalanchepeakcurrentdv/dt(V/ns)MOSFETVDSdv/dtdv/dtdv/dt(dv/dt)dv/dt34()dv/dtVDSVDSCgd()Rg()(2)(2)(2)(I1)CDS(dv/dt)RG*IlVGS(th)MOSFETMOSFET3.MOSFETdv/dt33MOSFETI2dv/dt4MOSFETPNCDSBJTCDSRBVDSI2CDSRBdv/dt(3)(3)VBE0.7dv/dtRBMOSFETBJTBVCBOMOSFET4.dv/dtdv/dtVDS5MOSFETMOSFETVDSdv/dtI2VDSIFMIrrVr6.dv/dtMOSFETdv/dtdv/dt5.dv/dt4PD(W)TC=25(Rthj-c)(4)Tj(max)PN(150175)Rthj-cMOSFET150175()MOSFETID(A)RDS(on)PackageSiliconChipLeadframeAmbient7.Rthjc2525(5)(5)Rthca()()Rthcs(MOSFET)Rthsa()TC(6)MOSFET5BV/BV80.67V/(600V/1)VGS(th)VGS(th)MOSFETID=250VGS(th)MOSFET200V900VVGS(th)2V4V100VMOSFETVGS(th)1V2V8.IGSS/IDSS/IGSSIGSSVGS(max)100IDSSIDSSVDS(max)RDS(on)RDS(on)VGS=5VVGS=10VMOSFETRDS(on)10RDS(on)(9)9.610.MOSFETRDS(ON)11RDS(ON)(7)RSOURCE=Rch=RA=RJ=JRD=RSUB=gfsorgm∆ID/∆VGSRF11.MOSFET(8)12.MOSFET7Ciss,Coss,CrssMOSFET(Cgs,Cgd,Cds)Ciss()=gd+CgsCoss()Cgd((Cgs*Cgd)/Cgd+Cgs)+CdsCrss()=Cgd1)Cgs()CgsVDSCgdCds2)Cgd()MOSFETVdsCgdMOSFET3)Cds()Cds1/√VdsVds(td(on))(tr)(td(off))(tf)VGSVGS(th)VDS10%1313.(Qg)(Qgs)(Qgd)Cisst0~t1VGSVGS(th)MOSFETt1~t2VGSCGSt2~t3CGS14.8VDSt2~t3VDSCGDCGSt3~t4CGDVGS1)Vgs=10VQG=20nC1mA202)Vgs=10VQG=20nC1A20IS()IDISM()2502%IDMVSD()trr()(di/dt=100A/)Qrr()ThermalImpedance&S.O.A1516SOA()(Rthjc)(8)15Zthjx(9)(PD)15.Pc(ID=Pc/VDS)16.9r(t)170PDM(W)1)15Zthjx0.091ms2)(9)162516.(32W,PL*2)17.dv/dt