CVD培训资料

WuxiCSMC-HJCo.,Ltd.CVDCVDCVDCVDICCVDCSMC-HJCVDCVDCVDCVDCVDCVDCVDChemicalVaporDeposition1CVD2ICCVDSiO2SiNPolyetcWWsietcCVD1CVD1WuxiCSMC-HJCo.,Ltd.CVD2CVD34CVDCVD1234CVDCVDICICCVDPMDIMDPassivationCVDCVDARCAnti-ReflectCoatPMD12PSGphosphoro-silicateglassBPSGboro-phospho-silicateglassIMD12WuxiCSMC-HJCo.,Ltd.CVD23KaC=K**A/tb=8.85418E-12farads/meterckVacuum1.00000Air1.00054Water78Silicondioxide3.9Siliconnitride7.0Silicon12.0(d)Timedelay=R*C.Passivation12SiONUV-SiNBSGPSGICICCVDICGaAsetcIC3WuxiCSMC-HJCo.,Ltd.CVDCVDICCVDICPVDCVD1APCVDCVD2LPCVDCVD3PECVDCVD4PCVDCVD51CVD2CVD3CVDCSMC-HJCVDCVDPECVDWCVDSOGLPCVDPECVD4WuxiCSMC-HJCo.,Ltd.CVDP5000123123PESiNPETEOSBPTEOS1SiH4NH3N2ON22TEOSTMBTMPO23CF4C2F6NF3RFPlasma5WuxiCSMC-HJCo.,Ltd.CVDPESiNSiH4NH3SiH4+NH3SiH4NH3SiH4+e3.06ev-------Si*H3+H*+e0evNH3+e(4.05ev)----N*H2+H*+e0evSiH4+e(1.60ev)---------Si**H2+H2+e0evNH3+e(3.59ev)-----N**H+H2+e0evSi**H2+e(1.60ev)-----Si****+H2+e0evN**H+e(4.05ev)-----N***+H*+e0ev1Plasmaabc2PECVDaSiH4+2N2O---------------Plasmaheat------SiO2H+2N2+2H2TEOS+O2-----------plasmaheat--------SiO2H+volatilesTEOS+TMB+TMP+O2-----plasmaheat----SiO2B2O3P2O5+volatilesbSiH4+N2N2NH3------plasmaheat---------SiNxHy+volatiles3P5000aCF4CCF6NF3+SiO2SiN--------plasmaheat----------SiFvolatile+CO2volatile+othersvolatiles6WuxiCSMC-HJCo.,Ltd.CVDPlasma1CVD2RFPowerCVD3Plasma4PlasmaSOGSOGSPINONGLASSSiO2SiO2SOGSOGCVDSOGSilicateSiloxaneSiOAlcoholKetoneSOGSOGSOGSOGSi-O80C150C250C425CSOGSiO2SOG5%15%7WuxiCSMC-HJCo.,Ltd.CVDSOGCVDSiO2SOG:aCVDbSOG(c)8WuxiCSMC-HJCo.,Ltd.CVD9CVDdCVDeWCVDWuxiCSMC-HJCo.,Ltd.CVDCentura123123SiH4WF6ARN2H2C2F6MainframeFeaturesWxZCHAMBERHARDWAREANDCHAMBERFeaturesWCVD10WuxiCSMC-HJCo.,Ltd.CVDALALWCVDALCVD=1.43~1.46=2.05~2.20g/cm3SiO22CVDSiO2WERSiO2103CVDSiO24CVDSiO2aFieldoxidebcdPSG1PSGaPSGUSGbPSGNacPSGUSG12WuxiCSMC-HJCo.,Ltd.CVDdSiO22PSGaALbcUSGdUSGeUSGWERDER38wt%P50002--6wt%aPSG8%4%1PSG2AL3……b1PSGNa+2PSG……BPSGBPSGBPSGBPSGBPBPSGBP4%800^950PSG150^300PALSiN1SiNSiH4N2NH3a13WuxiCSMC-HJCo.,Ltd.CVDb20—25%cdUV2SiNnoNH3a8—10%bcde3Si-HSiNa10—15%bUV.cdSiNCVDCVD1CVD2()CVD3CVD4CVD14WuxiCSMC-HJCo.,Ltd.CVDCVD1CVDA/Min2aSidewallstepcoveragebBottomstepcoveragecConformality3/(a)externalstresses(b)thermalstress(c)intrinsicstress(thickness,deprate,deptemperature,impurities,porosityetc)4g/cm3CVD5n=speedoflightinavacuum/speedoflightinthefilm15WuxiCSMC-HJCo.,Ltd.CVDMaterialRefractiveIndexSiO21.46Si3N42.01Silicon3.42Poly4.1SOG2111.395CVDA/MinSCVDSiO21APCVD(400P=760Torr)SiO4+O2adeprate2000A/minbcoverage:50-60%2LPCVD60010TorrTEOS+O2adeprate200A/minbcoverage:50-60%3PECVD450P=5-10TorrTEOS+O2adeprate7800A/minbCoverage50-70%4SACVD400450TorrTEOS+O3adeprate1400A/minbCoverage90%CVDPETEOSUSGPROCESSTRENDS16ParameterIncreasedDepositionRateNon-UniformityStress(Absolute)RefractiveIndexTEOSFlowWuxiCSMC-HJCo.,Ltd.CVD17500~1100sccmO2Flow300~800sccmRFPower475~875WattsPressure6.2~10.2TorrSusceptorSpacing180~260milsSusceptorTemp.360~440CLUCENTNITRIDEPROCESSTRENDSParameterIncreasedDepositionRateNon-UniformityStress(Absolute)RefractiveIndexSiH4Flow110–150sccmN2Flow3400–3800sccm__NH3Flow40–85sccmRFPower365–430WattsPressure3.6–5.6TorrSusceptorSpacing380–480milsSusceptorTemp.380420C__=Up=Down=NosignificanttrendWuxiCSMC-HJCo.,Ltd.CVD18CVDWuxiCSMC-HJCo.,Ltd.CVDCVD,19WuxiCSMC-HJCo.,Ltd.CVD20WuxiCSMC-HJCo.,Ltd.CVDTEOSALBPTEOSSINCVDCVDCVDCVD1/52321WuxiCSMC-HJCo.,Ltd.CVDCVDPMDBPSGBPBPSGBP4%800^950PSG150^300PALPMDBPTEOSBPBPTEOSPETEOSTEOSTEOSTEOSSiNHHMOSVt22WuxiCSMC-HJCo.,Ltd.CVDProblemMostlikelycauseRIMFCSiH4NH3SusceptorwearHandoffsDeprateMFCSiH4NH3RFMatchRFGeneratorUniformityLampsFaceplateSpacingStressMFCSiH4NH3SusceptorwearRFMatchGeneratorHazeLeakSiH4MFCSpacingParticleLeakWetcleanFilterPump(1)(2)Interlock(3)EMOEmergencyOff4RFRadiofrequencyaP50003000V13.56MHzRFbRFInterlockRFcRF5CRT523WuxiCSMC-HJCo.,Ltd.CVDabcTLV123455%PH31ITEMSPECIFICATIONREMARKPURITYConcentration5.00±0.1%Purity99.999%Impurities(ppm)O20.5CH40.5CO21.0CO1.0OTHERSPECIFICATIONSBasicGasAr(5.5N)BasicGas5.5N24WuxiCSMC-HJCo.,Ltd.CVDPurity2(350C)3100%SIH41ITEMSPECIFICATIONREMARK1GENERALSPECIFICATIONMolecularWeight32.112Boilingpoint(1atm)-112SpecificVolumeat200Cand1atm11.92ft3/lbFirePotentialEasyascanburtexplodableLeakagethenmeetoxygen4.2PURITYPurity4NImpurities(molarpip)N210.0CO2.0O2+Ar5.0CO22.0H2O1.0H280.0THC1.0HE10.0TotalChlorides10.0Resistively1000ohm•cm23TEOS(TetraethylOrthosilicate/TetraEthylOxySaline)125WuxiCSMC-HJCo.,Ltd.CVDITEMSPECIFICATIONREMARK4.1PHYSICALCHARACTERISTICSFormulaSi(OC2H5)4MolecularWeight208.3BoilingPoint1680C(Pressure:760mmHg)FreezingPoint-820CDensity0.932g/ml(Temp:200C)VaporDensity7.2(Air=1)FlashPoint520CTLV10ppm4.2SPECIFICATIONSAssay≥99.99%Puritybasedonmetalsanalyzed≥99.999999%guaranteedWater≤20ppmColor(APHA)≤10Particles(≥0.2um)≤40perml23TMB(Trimethylborate)1ITEMSPECIFICATIONREMAR