TLP291-4-datasheet-en

TLP291-41PhotocouplersGaAsInfraredLED&PhotoTransistorTLP291-4TLP291-4TLP291-4TLP291-41.1.1.1.ApplicationsApplicationsApplicationsApplications•ProgrammableLogicControllers(PLCs)•SwitchingPowerSupplies•Simplex/MultiplexDataTransmission2.2.2.2.GeneralGeneralGeneralGeneralTheToshibaTLP291-4consistsofphototransistorsopticallycoupledtogalliumarsenideinfraredemittingdiodes.TheTLP291-4PhotocouplerishousedintheverysmallandthinSO16package.SincetheTLP291-4isguaranteedoverawideoperatingtemperaturerange(Ta=-55to110),itissuitableforhigh-densitysurfacemountapplicationssuchasprogrammablecontrollers.3.3.3.3.FeaturesFeaturesFeaturesFeatures(1)Collector-emittervoltage:80V(min)(2)Currenttransferratio:50%(min)GBRank:100%(min)(3)Isolationvoltage:2500Vrms(min)(4)Operatingtemperature:-55to110(5)SafetystandardsUL-approvedUL1577FileNo.E67349cUL-approvedCSAComponentAcceptanceServiceNo.5AFileNo.E67349VDEapprovedEN60747-5-2CertificateNo.40009347(Note)Note:WhenanEN60747-5-2approvedtypeisneeded,pleasedesignatetheOption(V4)Note:WhenanEN60747-5-2approvedtypeisneeded,pleasedesignatetheOption(V4)Note:WhenanEN60747-5-2approvedtypeisneeded,pleasedesignatetheOption(V4)Note:WhenanEN60747-5-2approvedtypeisneeded,pleasedesignatetheOption(V4).4.4.4.4.PackagingandPinConfigurationPackagingandPinConfigurationPackagingandPinConfigurationPackagingandPinConfiguration1,3,5,7:Anode2,4,6,8:Cathode9,11,13,15:Emitter10,12,14,16:Collector11-11F12012-03-22Rev.4.0TLP291-425.5.5.5.PrincipleofOperationPrincipleofOperationPrincipleofOperationPrincipleofOperation5.1.5.1.5.1.5.1.MechanicalParametersMechanicalParametersMechanicalParametersMechanicalParametersCharacteristicsCreepagedistancesClearanceInternalisolationthicknessMin5.05.00.1Unitmm6.6.6.6.AbsoluteMaximumRatings(Note)(Unlessotherwisespecified,TAbsoluteMaximumRatings(Note)(Unlessotherwisespecified,TAbsoluteMaximumRatings(Note)(Unlessotherwisespecified,TAbsoluteMaximumRatings(Note)(Unlessotherwisespecified,Taaaa=25=25=25=25))))LEDDetectorCommonCharacteristicsInputforwardcurrentInputforwardcurrentderatingInputforwardcurrent(pulsed)InputreversevoltageJunctiontemperatureCollector-emittervoltageEmitter-collectorvoltageCollectorcurrentCollectorpowerdissipationCollectorpowerdissipationderating(1circuit)JunctiontemperatureOperatingtemperatureStoragetemperatureLeadsolderingtemperatureTotalpowerdissipation(1circuit)Inputpowerdissipationderating(1circuit)Isolationvoltage(Ta≥50)(Ta≥25)(10s)(Ta≥25)AC,1min,R.H.≤60%SymbolIF∆IF/∆TaIFPVRTjVCEOVECOICPC∆PC/∆TaTjToprTstgTsolPT∆PD/∆TaBVSNote(Note1)(Note2)Rating50-0.671512580750100-1.0125-55to110-55to125260170-1.72500UnitmAmA/AVVmAmWmW/mWmW/VrmsNote:Usingcontinuouslyunderheavyloads(e.g.theapplicationofhightemperature/current/voltageandthesignificantchangeintemperature,etc.)maycausethisproducttodecreaseinthereliabilitysignificantlyeveniftheoperatingconditions(i.e.operatingtemperature/current/voltage,etc.)arewithintheabsolutemaximumratings.PleasedesigntheappropriatereliabilityuponreviewingtheToshibaSemiconductorReliabilityHandbook(HandlingPrecautions/DeratingConceptandMethods)andindividualreliabilitydata(i.e.reliabilitytestreportandestimatedfailurerate,etc).Note1:Pulsewidth(PW)≤100µs,f=100HzNote2:Thisdeviceisconsideredasatwo-terminaldevice:Pins1,2,3,4,5,6,7and8areshortedtogether,andpins9,10,11,12,13,14,15and16areshortedtogether.2012-03-22Rev.4.0TLP291-437.7.7.7.ElectricalCharacteristics(Unlessotherwisespecified,TElectricalCharacteristics(Unlessotherwisespecified,TElectricalCharacteristics(Unlessotherwisespecified,TElectricalCharacteristics(Unlessotherwisespecified,Taaaa=25=25=25=25))))LEDDetectorCharacteristicsInputforwardvoltageInputreversecurrentInputcapacitanceCollector-emitterbreakdownvoltageEmitter-collectorbreakdownvoltageDarkCurrentCollector-emittercapacitanceSymbolVFIRCtV(BR)CEOV(BR)ECOIDARKCCENoteTestConditionIF=10mAVR=5VV=0V,f=1MHzIC=0.5mAIE=0.1mAVCE=48VVCE=48V,Ta=85V=0V,f=1MHzMin1.1807Typ.1.20300.01210Max1.4100.150UnitVµApFVµApF8.8.8.8.CoupledElectricalCharacteristics(Unlessotherwisespecified,TCoupledElectricalCharacteristics(Unlessotherwisespecified,TCoupledElectricalCharacteristics(Unlessotherwisespecified,TCoupledElectricalCharacteristics(Unlessotherwisespecified,Taaaa=25=25=25=25))))CharacteristicsCurrenttransferratioSaturatedcurrenttransferratioCollector-emittersaturationvoltageOFF-statecollectorcurrentSymbolIC/IFIC/IF(sat)VCE(sat)IC(off)Note(Note1)TestConditionIF=5mA,VCE=5VIF=5mA,VCE=5V,RankGBIF=1mA,VCE=0.4VIF=1mA,VCE=0.4V,RankGBIC=2.4mA,IF=8mAIC=0.2mA,IF=1mAIC=0.2mA,IF=1mA,RankGBVF=0.7V,VCE=48VMin5010030Typ.600.2Max4004000.40.410Unit%VµANote1:SeeTable8.1forcurrenttransferratio.TableTableTableTable8.18.18.18.1Currenttransferratio(CTR)Rank(Note)(Unlessotherwisespecified,TCurrenttransferratio(CTR)Rank(Note)(Unlessotherwisespecified,TCurrenttransferratio(CTR)Rank(Note)(Unlessotherwisespecified,TCurrenttransferratio(CTR)Rank(Note)(Unlessotherwisespecified,Taaaa=25=25=25=25))))RankBlankGBTestConditionIF=5mA,VCE=5VCurre