集成电路课件

集成电路分析与设计第1讲认识集成电路设计及其设计过程《集成电路分析与设计》课程主要介绍什么内容?CMOS数字集成电路(CMOSdigitalIC)IC的发展历史及现状(HistoryofIC)IC设计流程和方法(DesignprocessandMethodology)IC制造工艺技术(Fabricationprocess)ICEDA（CAD）工具使用(EDAtools)CMOS反相器设计(CMOSInverter)CMOS组合逻辑门设计(CombinationalLogicCircuit)CMOS时序逻辑电路设计(SequentialLogicCircuit)IC版图设计(Layout)IC仿真技术(Simulation)存储器电路设计介绍(MemoryCircuits)模拟IC设计介绍(AnalogIC)《集成电路分析与设计》课程信息课程性质：是一门专业基础课程主要介绍CMOS数字集成电路设计的基础知识共40课时（32理论课时+8实验课时）完成4个实验对准备从事IC行业的学生来讲，本课程只是一个基础，还需要继续深入学习更多关于IC设计的知识，如数字IC深入，模拟IC，RFIC等。实验内容（共8学时）实验一（2学时）反相器电路设计（SimulationandLayout）实验二（2学时）NAND电路设计（SimulationandLayout）实验三（2学时）AND电路设计（SimulationandLayout）实验四（2学时）D触发器电路设计（SimulationandLayout）Project（选作内容）完成一个44SRAM芯片的设计3人一组项目过程：A期中OralpresentationB期末OralpresentationC项目报告书一份D3人项目成绩相同GradingPolicy课堂提问和作业10%实验20%考试（开卷）70%规则：（1）1个问题和4次作业，每次/个2分，共10分；（2）每个实验完成得5分，共20分；（3）点名1次不到，10分没了；（4）抄作业，抄实验报告，相应分数没了；（5）请假规则：必须有正规请假手续和课前请假。本课程推荐书目教材中文版周润德等译，数字集成电路设计透视第二版，电子工业出版社(JanM.Rabaey,etal.DigitalIntegratedCircuits,2nde,PrenticeHall,2004)参考书Sung-Mo(Steve)Kang,YusufLeblebici,CMOSDigitalIntegratedCircuitsAnalysis&Design,3rdEdition,McGraw-Hill2003R.JacobBaker,CMOSCircuitDesign,Layout,andsimulation,3rdEdition,Wiley,2010韩雁，集成电路设计CAD/EDA工具实用教程，机械工业出版社，2010IC设计优秀书目推荐模拟集成电路Razavi，模拟CMOS集成电路设计，清华大学出版社，2005通用参考书（Bible）威斯特，CMOS超大规模集成电路设计，第三版，中国电力出版社几个常见缩略词CMOS(complementarymetaloxidesemiconductor)IC(integratedcircuit)VLSI(verylargescaleintegrated)ULSI(ultra-largescaleintegrated)MOSFET(metaloxidesemiconductorfieldeffecttransistors)SPICE(simulationprogramwithintegratedcircuitemphasis)认识集成电路和集成电路设计为什么需要集成电路？与以前的集成电路设计相比，为什么现在的集成电路设计出现了不同以及现在的集成电路设计遇到了哪些新的挑战？未来，集成电路将如何发展？为什么需要集成电路?Integrationreducesdevicesize（减小尺寸）Laptop,iPod,mp3,cellphone,...Integrationimprovesthedesign（提高性能）higherspeed;lowerpowerconsuption;morereliable.Integrationreducesmanufacturingcost（降低成本）BOM(BoardofMaterials)costreducesMassICproductionreducescostElectronicsIndustryDesign,fab,applicationEducationSoftwareCommunication/NetworkingFabcost:$2-$3billionDrivingforceofworldeconomyLargeinvestment:fab,packaging,design,EDAPentium®4“Northwood”55Mtransistors/2-2.5GHzL=0.13µmMoore’sLaw(1965)GordonMoore–IntelFounder“Thenumberoftransistorsonachipdoubledevery18to24months.”16151413121110987654321019591960196119621963196419651966196719681969197019711972197319741975LOG2OFTHENUMBEROFCOMPONENTSPERINTEGRATEDFUNCTIONElectronics,April19,1965.GordonMooreIntelCo-FounderandChairmainEmeritusImagesource:IntelCorporationElectronicsystemincars.Electronicfinancialsystem:e-banking,e-money,e-stock,RFIDlablePersonalcomputing/entertainmentMedicalelectronicsystems.Internet:routers,firewalls,servers,storagesElectroniclibrary(Google,...)DVDR/W,HDTV,InteractiveTVIngeneral,consumerelectronicsetc...ChallengesofICDesignComplexity:Multi-milliontransistorsonasinglechip(smallersize/fasterspeed)Multipleandconflictingspecificationsforhighperformance(power/speed/throughput)Competition:ShortdesigntimeDesignTools:Multipletoolsinvolved,ComplexdesignflowAnalogBasebandDigitalBaseband(DSP+MCU)PowerManagementSmallSignalRFPowerRFRelatedtoICJobsLayoutdesignersCircuitdesigners(Digital/Analog/RF)ArchitectsTest/VerificationengineersFabricationengineersSystemdesigners(SoC)CADtoolprogrammersEmbeddedSystemdevelopersSoftwareprogrammersTheTransistorRevolutionFirsttransistorBellLabs,1947J.Bardeen,W.Shockley,andW.Brattain(1956NobelprizeLaureate)1958年J.Kilby（TI）研制成功第一个集成电路1959年R.Noyce（Fairchild）第一个利用平面工艺制成集成电路TheFirstIntegratedCircuitsTheFirstIntegratedCircuitsBipolarlogic1960’sECL3-inputGateMotorola1966FirstcommercialIClogicgates–Fairchild1960TTL–1962intothe1990’sECL–1974intothe1980’sIntel4004Micro-Processor19702300transistors~1MHzoperationIntelPentium(IV)microprocessorPentium®4“Northwood”CommercialProduction:Year2001L=0.13µm6MLCuLow-kFC-PGA2MOSFETTechnologyMOSFETtransistor-Lilienfeld(Canada)in1925andHeil(England)in1935CMOS–1960’s,butplaguedwithmanufacturingproblems(usedinwatchesduetotheirpowerlimitations)PMOSin1960’s(calculators)NMOSin1970’s(4004,8080)–forspeedCMOSin1980’s–preferredMOSFETtechnologybecauseofpowerbenefitsBiCMOS,Gallium-Arsenide,Silicon-GermaniumSOI,Copper-LowK,strainedsilicon,High-kgateoxide...WorldwideSemiconductorRevenueSource:ISSCC2003G.Moore“Noexponentialisforever,but‘forever’canbedelayed”1’’Waferin1964vs.300mm(12”)Waferin2003IBMPowerPC970(130nm)20031.8Ghz58M118mm2ApplePowerG5,thefastestPCin2003,hasdualPPC970CPUTwochipsyouareseeingtodayMicroprocessorASIC(ApplicationSpecificIC)State-of-theArt:LeadMicroprocessorsState-of-theArt:LeadMicroprocessors(uptodate)Pentium4180nm(2001)1.7GHz42Mtransistors217mm2Pentium4130nm(2003)3.2GHz55MTransistors131mm2Pentium490nm(2004)3.4Hz125MTransistors112mm2Pentiumon65nm(2005/2006)250MillionPentiumon45nm(2007)400to500MillionFreq(HZ)TransistorsDiesizemm2PowerDateServerIBMPower4+1.7G180M267N/A2003Itanium21.5G410M374130W2003IBMPower52G276M389N/A2004/2PCIBMPowerPC9701.8G58M11842W2003/6Penti