IRF640中文资料

PhilipsSemiconductorsProductspecificationN-channelTrenchMOS™transistorIRF640,IRF640SFEATURESSYMBOLQUICKREFERENCEDATA•’Trench’technology•Lowon-stateresistanceVDSS=200V•Fastswitching•LowthermalresistanceID=16ARDS(ON)≤180mΩGENERALDESCRIPTIONN-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications.TheIRF640issuppliedintheSOT78(TO220AB)conventionalleadedpackage.TheIRF640SissuppliedintheSOT404(D2PAK)surfacemountingpackage.PINNINGSOT78(TO220AB)SOT404(D2PAK)PINDESCRIPTION1gate2drain13sourcetabdrainLIMITINGVALUESLimitingvaluesinaccordancewiththeAbsoluteMaximumSystem(IEC134)SYMBOLPARAMETERCONDITIONSMIN.MAX.UNITVDSSDrain-sourcevoltageTj=25˚Cto175˚C-200VVDGRDrain-gatevoltageTj=25˚Cto175˚C;RGS=20kΩ-200VVGSGate-sourcevoltage-±20VIDContinuousdraincurrentTmb=25˚C;VGS=10V-16ATmb=100˚C;VGS=10V-11AIDMPulseddraincurrentTmb=25˚C-64APDTotalpowerdissipationTmb=25˚C-136WTj,TstgOperatingjunctionand-55175˚Cstoragetemperaturedgs13tab2123tab1Itisnotpossibletomakeconnectiontopin:2oftheSOT404packageAugust19991Rev1.100PhilipsSemiconductorsProductspecificationN-channelTrenchMOS™transistorIRF640,IRF640SAVALANCHEENERGYLIMITINGVALUESLimitingvaluesinaccordancewiththeAbsoluteMaximumSystem(IEC134)SYMBOLPARAMETERCONDITIONSMIN.MAX.UNITEASNon-repetitiveavalancheUnclampedinductiveload,IAS=6.2A;-580mJenergytp=720μs;Tjpriortoavalanche=25˚C;VDD≤25V;RGS=50Ω;VGS=10V;refertofig;14IASPeaknon-repetitive-16AavalanchecurrentTHERMALRESISTANCESSYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNITRthj-mbThermalresistancejunction--1.1K/WtomountingbaseRthj-aThermalresistancejunctionSOT78package,infreeair-60-K/WtoambientSOT404package,pcbmounted,minimum-50-K/WfootprintELECTRICALCHARACTERISTICSTj=25˚CunlessotherwisespecifiedSYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNITV(BR)DSSDrain-sourcebreakdownVGS=0V;ID=0.25mA;200--VvoltageTj=-55˚C178--VVGS(TO)GatethresholdvoltageVDS=VGS;ID=1mA234VTj=175˚C1--VTj=-55˚C-6VRDS(ON)Drain-sourceon-stateVGS=10V;ID=8A-130180mΩresistanceTj=175˚C--522mΩIGSSGatesourceleakagecurrentVGS=±20V;VDS=0V-10100nAIDSSZerogatevoltagedrainVDS=200V;VGS=0V;-0.0510μAcurrentVDS=160V;VGS=0V;Tj=175˚C--250μAQg(tot)TotalgatechargeID=18A;VDD=160V;VGS=10V--63nCQgsGate-sourcecharge--12nCQgdGate-drain(Miller)charge--35nCtdonTurn-ondelaytimeVDD=100V;RD=5.6Ω;-12-nstrTurn-onrisetimeVGS=10V;RG=5.6Ω-45-nstdoffTurn-offdelaytimeResistiveload-54-nstfTurn-offfalltime-38-nsLdInternaldraininductanceMeasuredtabtocentreofdie-3.5-nHLdInternaldraininductanceMeasuredfromdrainleadtocentreofdie-4.5-nH(SOT78packageonly)LsInternalsourceinductanceMeasuredfromsourceleadtosource-7.5-nHbondpadCissInputcapacitanceVGS=0V;VDS=25V;f=1MHz-1850-pFCossOutputcapacitance-170-pFCrssFeedbackcapacitance-91-pFAugust19992Rev1.100PhilipsSemiconductorsProductspecificationN-channelTrenchMOS™transistorIRF640,IRF640SREVERSEDIODELIMITINGVALUESANDCHARACTERISTICSTj=25˚CunlessotherwisespecifiedSYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNITISContinuoussourcecurrent--16A(bodydiode)ISMPulsedsourcecurrent(body--64Adiode)VSDDiodeforwardvoltageIF=18A;VGS=0V-1.01.5VtrrReverserecoverytimeIF=18A;-dIF/dt=100A/μs;-130-nsQrrReverserecoverychargeVGS=0V;VR=25V-0.8-μCAugust19993Rev1.100PhilipsSemiconductorsProductspecificationN-channelTrenchMOS™transistorIRF640,IRF640SFig.1.Normalisedpowerdissipation.PD%=100⋅PD/PD25˚C=f(Tmb)Fig.2.Normalisedcontinuousdraincurrent.ID%=100⋅ID/ID25˚C=f(Tmb);VGS≥10VFig.3.SafeoperatingareaID&IDM=f(VDS);IDMsinglepulse;parametertpFig.4.Transientthermalimpedance.Zthj-mb=f(t);parameterD=tp/TFig.5.Typicaloutputcharacteristics,Tj=25˚C.ID=f(VDS)Fig.6.Typicalon-stateresistance,Tj=25˚C.RDS(ON)=f(ID)NormalisedPowerDerating,PD(%)01020304050607080901000255075100125150175MountingBasetemperature,Tmb(C)0.0010.010.11101E-061E-051E-041E-031E-021E-011E+00Pulsewidth,tp(s)Transientthermalimpedance,Zthj-mb(K/W)singlepulseD=0.50.20.10.050.02tpD=tp/TDPTNormalisedCurrentDerating,ID(%)01020304050607080901000255075100125150175MountingBasetemperature,Tmb(C)0246810121416182000.20.40.60.811.21.41.61.82Drain-SourceVoltage,VDS(V)DrainCurrent,ID(A)Tj=25CVGS=10V5V5.5V8V4.5V6V0.11101001101001000Drain-SourceVoltage,VDS(V)PeakPulsedDrainCurrent,IDM(A)D.C.100ms10msRDS(on)=VDS/ID1mstp=10us100us00.050.10.150.20.250.302468101214161820DrainCurrent,ID(A)Drain-SourceOnResistance,RDS(on)(Ohms)VGS=10VTj=25C6V8V5.5V5V4.5VAugust19994Rev1.100PhilipsSemiconductorsProductspecificationN-channelTrenchMOS™transistorIRF640,IRF640SFig.7.Typicaltransfercharacteristics.ID=f(VGS)Fig.8.Typicaltransconductance,Tj=25˚C.gfs=f(ID)Fig.9.Normaliseddrain-sourceon-stateresistance.RDS(ON)/RDS(ON)25˚C=f(Tj)Fig.10.Gatethresholdvoltage.VGS(TO)=f(Tj);conditions:ID=1mA;VDS=VGSFig.11.Sub-thresholddraincurrent.ID=f(VGS);conditions:Tj=25˚CFig.12.Typicalcapacitances,Ciss,Coss,Crss.C=f(VDS);conditions:VGS=0V;f=1MHz024681012141618200123456Gate-sourcevoltage,VGS(V)Draincurrent,ID(A)VDSIDXRDS(ON)Tj=25C175CThresholdVo