HD4100-Introduction

1HDMicroSystemsConfidentialInfo.HD-4100seriesPolyimideCoatingforAdvancedPackagingHD-4100seriesPolyimideCoatingforAdvancedPackagingSep.19.’07T.MotobeHDM070919-12HDMicroSystemsConfidentialInfo.HD4100seriesFeatures-SolventdevelopableNegative-tonePhotosensitivePolyimide-Goodmaterial&processstabilityLongpot/shelflife,Wideprocesslatitude-Goodadhesiontosubstrates/metalsandmoldingcompoundsMetals(Si,SiO2,SiN,Al,Ti,TiW,Cu,Cr,Ni),Underfill,EMC-HighCucompatibilityHAST(85/85,6V)/1000hr-Goodthermal/mechanicalpropertiesStrongfilm,goodelongation,highTg,highthermalstability-GoodchemicalresistanceOrganicsolvents,Acid,Alkaline-WidethicknessrangeThickformable,3~20umaftercure3HDMicroSystemsConfidentialInfo.HD4100seriesTargetApplication1.Bumping,RDL,Flipchip(AdvancedPKG)HD4100serieshasexcellent-Adhesiontometals-PI/PIadhesion-Chemicalresistance-Thermalstability-Mechanicalproperties-Cucompatibility2.StressbufferHD4100seriesmeetstostressbufferapplicationwithgoodthermal/mechanicalpropertiesandgoodadhesion.SinglebumpingRDLPIPIPIPI4HDMicroSystemsConfidentialInfo.HD4100SeriesProductLine-upProductThicknessNameTargetExposureToolNoteHD41004-11umi-line/B.BStepperCucompatibleAlignerStandardHD41043-7umi-line/B.BStepperCucompatibleAlignerLowvisc.for12”HD41108-20umi-line/B.BStepperCucompatibleAlignerHighvisc.forthickfilm5HDMicroSystemsConfidentialInfo.HD4100seriesStandardProcessconditions60(20x2)sec40(20x2)sec40(20x2)secPuddle200-300mJ/cm2100-200mJ/cm2100-200mJ/cm2B.B.alignerSpray/streami-linestepper3000rpm/30secPrebake:20mCured:10um2400rpm/30secPrebake:10.5umCured:5um3800rpm/30secPrebake:10.5umCured:5umCoating(Pre-spin800-1000rpm/10sec)400-500mJ/cm2200-400mJ/cm2200-400mJ/cm2Exposure90C/120s+110C/120s90C/100s+100C/100s90C/100s+100C/100sPrebake(Hotplate)50sec30sec30secDevelopmentUsuallynotrequired90C/60sec(Option)NotrequiredNotrequiredPEB(PostExposureBake)(Hotplate)350-390C/60min350-390C/60min350-390C/60minFinalCure(inN2)7sec7sec7secRinse(Spray/stream)O2/CF4,O2plasmaO2/CF4,O2plasmaO2/CF4,O2plasmaDe-scumHD4110HD4104HD4100Process[Chemicals]Developer:PA401D,Rinse:PA400R6HDMicroSystemsConfidentialInfo.0510152025303540100020003000400050006000SpinSpeed(min-1/30sec)Thickness(um)PrebakeCured051015202530354010203040506070SpinTime(sec,3800min-1)Thickness(um)PrebakeSpin-speedvsThicknessSpin-timevsThicknessHD4100SpinSpeedCurveHD4100HD41007HDMicroSystemsConfidentialInfo.051015202530100020003000400050006000SpinSpeed(min-1/30sec)Thickness(um)PrebakeCuredSpin-speedvsThicknessHD4104&HD4110SpinSpeedCurve01020304050100020003000400050006000SpinSpeed(min-1/30sec)Thickness(um)PrebakeCuredHD4104HD41108HDMicroSystemsConfidentialInfo.HD4100Thicknessuniformityon8”waferACS300Plus/SussMicrotec9.09.510.010.511.011.512.005101520253035404550PointssiteofwaferThickness(um)Max10.4246Min10.2761AVERAGE10.3574STDEV0.0399Range:0.15um9HDMicroSystemsConfidentialInfo.HD4100/HD4104Photo-speedData50607080901000100200300400500600Exposuredose(mJ/cm2)Filmretention(%)i-linestepperAligner(PLA)[Note]*Filmretention:Development/PrebakeX100(%)(Thickness:10umafterprebake5umaftercure)10HDMicroSystemsConfidentialInfo.HD4100/HD4104Patternprofile5umLine&SpaceAfterDeveAfterCureAfterCure100umviaholeAlAfterCureCu11HDMicroSystemsConfidentialInfo.HD4110PatternProfileAfterdevelop(Thickness30um)10umL&S15umL&S12HDMicroSystemsConfidentialInfo.HD4100Stability60708090100110120051015202530Holdtime(Day)%afterholding(Initial=100)ViscosityThickness60708090100110120051015202530Holdtime(Month)%afterholding(Initial=100)ViscosityThickness60708090100110120051015202530Holdtime(Day)%afterholding(Initial=100)JustetchingtimeFilmretention60708090100110120051015202530Holdtime(Month)%afterholding(Initial=100)JustetchingtimeFilmretentionViscosity&ThicknessEtchingrate&Filmretention@RT@-20C@[e-mail]4100seriesFilmPropertiesItemUnitCureTemp./Time℃/min400/60375/30375/60375/120350/60320/60TensileStrengthMpa200180200200190165ELongation%355045455030ModulusGpa3.63.43.53.53.43.0ResidualStressMpa353234353229Weightloss(1%)℃440410430440365305Weightloss(3%)℃465440460460390320Weightloss(5%)℃490465480485410330Tg℃350315325330290260CTEppm304035355060CureconditionStandard14HDMicroSystemsConfidentialInfo.ItemPropertyDielectricConstant3.2(1MHz)SurfaceResistivity3.3×E16ohm*cm(50V)VolumeResistivity2.4×E16ohm*cm(50V)DissipationFactor0.001(1MHz)DielectricStrength250kV/mmFilmthickness:Cured8umHD4100seriesElectricProperties15HDMicroSystemsConfidentialInfo.HD4100seriesChemicalResistance1Nochange80C,30minNH4OH/H2O2/H2O(1:1:5)3NochangeRT,30minNH4F/HF(~6:1)1NochangeRT,3hrMethanesulfomicacid(10%)1NochangeRT,10minHF(49%):Water(1:180)1NochangeRT,30min,H2SO4(57%)/H2O/H2O2(31%)(100:100:3)2NochangeRT,3hrH2SO4(10%)1Nochange85C,60minS-106(TOK)1Nochange100C,30minKOH(2%)/DMSO1NochangeRT,30minPGMEA1NochangeRT,30minPGME1NochangeRT,30minNMP1NochangeRT,10minIPA(liquid)1NochangeRT,30minEthyleneglycol1NochangeRT,30minEthylLactateFilmLoss(%)FilmappearanceConditionChemical16HDMicroSystemsConfidentialInfo.HD4100seriesAdhesio