基于CMOS工艺SPAD的单光子探测技术研究

基于CMOS工艺SPAD的单光子探测技术研究重庆大学硕士学位论文(学术学位)学生姓名：闫旭亮指导教师：孟丽娅副教授专业：仪器科学与技术学科门类：工学重庆大学光电工程学院二O一五年五月1中央高校科研基本业务费资助项目(CDJZR12120001)Studyonsingle-photondetectorBasedonCMOSTechnologySingle-PhotonAvalancheDiodeAThesisSubmittedtoChongqingUniversityInPartialFulfillmentoftheRequirementfortheMaster’sDegreeofEngineeringByYanXuliangSupervisedbyAssociateProf.MengLiyaSpecialty:InstrumentScienceandTechnologyCollegeofOptoelectronicEngineeringofChongqingUniversity,Chongqing,ChinaMay,20152SupportedbyCDJZR(No.12120001)中文摘要I摘要光在极其微弱时会离散成一个个的光子，称为单光子。单光子信号由于强度微弱且粒子性显著，常规技术难以对其检测，被认为是光电探测技术的极限。同时单光子信号又是一种普遍存在的信息载体，在日常生活、工业生产、科学研究以及国防军事等各方面都有着广泛应用，因而近年来受到研究人员重视。单光子探测技术主要体现在以下几方面：有极高增益的单光子探测器件，控制单光子探测器件并对信号进行处理的快速电路，器件和电路的集成技术，大规模像元阵列的制作及拼接。目前在单光子探测方面亟待解决的问题有：单光子探测器工艺复杂、工作电压高、价格昂贵、重复性差，外围电路响应速度慢、版图面积大，对单光子探测器和相关电路的混合拼接易导致性能下降、噪声变大。为解决上述问题，本文在中央高校基本业务费资助项目(NO.12120001)支持下，对单光子探测技术进行了研究。文章选用实验室设计的带保护环结构的CMOS工艺兼容的雪崩光电二极管作为单光子探测器件，对雪崩光电二极管的工作原理和相关参数进行了介绍。用等效电路模型代替雪崩光电二极管在软件中进行仿真，分析比较了雪崩光电二极管的三种淬灭模式，选择主动淬灭电路控制雪崩光电二极管，用高速电压比较电路作为雪崩信号甄别电路，设计了数字和模拟结构的计数电路。在此基础上完成了单光子探测像元电路，包括雪崩光电二极管等效电路、淬灭复位电路、雪崩信号甄别电路、光子计数电路等。仿真结果显示电路探测速度可达5ns，淬灭电路死时间约2.690ns，从光子信号进入到计数完成整体电路传输延时约3.0572ns，计数电路在线性模式下的计数容量为55。此外，还对时间相关单光子计数的原理和基本电路结构进行介绍，用高速电压比较电路进行光子到达定时，阐述几种时间数字转化技术，设计了基于S-R锁存器的时间放大电路和基于电流偏置比例的时间放大电路。关键词：单光子探测，雪崩光电二极管，光子计数，时间相关单光子计数重庆大学硕士学位论文II英文摘要IIIABSTRACTOpticalsignalswilldisperseintophotonswhenitisextremelyweak，becalledassingle-photonsignal．Asitsweakintensityandsignificantparticles，Single-photonishardtodetectbyconventionalmeanstestingandconsideredtobethelimitofthephotoelectricdetectiontechnology．But，single-photonasakindofwidespreadinformationcarrierhasbeenhighlyregardandwidelyappliedinthedailylife，industrialproduction，scientificresearchandmilitaryareas．Single-photondetectiontechnologyismainlymanifestedinthefollowingrespects：singlephotondetectorwithaveryhighgain，extremelyfastcircuitstocontrolthesingle-photondetectorandprocessingsingle，integrationofdevicesandcircuits，accomplishinglarge-scalearray．Thereareaseriesofproblemstobesolvedinpracticalapplication．Thecharacteristicofsingle-photondetectorispoorintechnology，workingvoltage，price，repeatability．Circuitsworkslowandtakemuchlayout．Thehybirdintegrationofdevicesandcircuitseasilyleadtoperformancedegradationandnoiseenhancement．Thisarticlewithsupportofthecentralcollegesanduniversitiesscientificresearchbasicbusinessfindingresearchedsingle-photondetectiontechnologytosolvetheaboveproblems．ThepaperputforwardtouseCMOStechnologyavalanchephotodiodewithprotectionringassingle-photondetectorandintroduceditsworkingprincipleandcharacteristicparameters．Thepaperusedtheequivalentcircuitmodelinsteadofavalanchephotodiodeinthecircuitsimulation，comparedthreekindsofquenchingmodelandselectedactivequenchingcircuitcontrollingavalanchephotodiode，designedhighspeedvoltagecomparsioncircuitscreeningavalanchesignal，plannedtwocountingcircuit．Asanimportantwork，weconstructedancompletepixelcircuit，includingtheequivalentcircuitofavalanchephotodiode，thequenchingandresettingcircuit,avalanchesignaldiscriminationcircuit，photoncountingcircuit，etc．Thesimulationresultsshowthattheminimumdetectiontimeis5ns，deadtimeofquenchingcircuitisapproximately2.690ns，thetimefromphotonintodetectortoaccomplishcountinglast3.0572ns，countinginlinearmoderangefrom0to55．Inaddition，paperintroducedtheprincipleandcircuitstructureoftimecorrelatedsinglephotoncounting，appliedvoltagecomparatordefiningtimeofphotonarriving，statedseveraltypicalkindsoftimetodigitalconverter，designedtwotypestimeamplifiercircuitbasedonS-Rlanchand重庆大学硕士学位论文IVcurrentbiasratio．Keywords:single-photondetector，avalanchephotodiode，photoncounting，TCSPC目录V目录中文摘要········································································································I英文摘要······································································································III1绪论··········································································································11.1引言··········································································································11.2单光子探测技术··························································································11.3国内外研究现状··························································································41.4课题主要工作和内容安排··············································································62单光子探测技术的基本理论与方法·····················································72.1SPAD介绍··································································································72.1.1SPAD工作原理·······················································································72.1.2SPAD主要参数·······················································································82.1.3SPAD工艺与结构····················································································92.2SPAD等效电路模型···················································································1222.2.1简单SPAD等效电路························································