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EE/--IC11KCL2KVLKVL2(C=S/4kd)4rorSSSCddkd14okrSd34shunt-shuntfeedbackseries-seriesfeedbackseries-shuntfeedbackshunt-seriesfeedback4.1amplifierdesign4.24.3poweroutputstage4.4broadbandamplifiers5MOS5.1bipolartransistorICBOICEOICEO=1+betaICBOICBOICEObetaVBE-2~3mV/KICMbeta2/3PCMPc=Ic*VCEIcVCEPcPCM;VBREBOVBRCEOVBRCBOfTff()1offjf|()|2of|()|1Tf21Toofff1()()1()1(1)oooffffjf|()|2of(1)offTfffTfffTfoof5.2MOSFETtransistor22movovIgIVV2ovIV212ovIV022ttFSBFVVV(0.01~0.3)mbmggMOSVGSVtIdsVGSJFETJFETVGS0VGS0igGSVGS0|VGS|idsFETBJTFETBJTFETDSMOSVGSBJTFETBJTFETBJTFETBJTJFETFET6oscillationnullingresistor-3dBP2276.1RC--CC--RC-6.2fzf2fzP2f2f2P2f1f171801118045601-3dB28nullingresistor99.19.1.1gmVinRDRD9.1.2VoutVDD-VthM1M2M2M2VovVgs2Voutmax9.1.3VoutVout9.1.4MOSoxCTHPVVbVoutmax=VDD9.1.5sourcedegeneration1mmmSgGgRRsGmAvAv9.21()mSVmmbSgRAggRM1VinRs9.3()vmmbDAggR11()()DoDinmmbommbommbRrRZggrggrggRD1inmmbZggbuffergdC-9.4221outmooZgrrM2M1CSCGCDCSCGCD110Y+Y-,2CMYYYDMYYY1111.1CMOS112112SSovovIIVVM1M2Vid1||2idovVV11.2BJTVEEVCCIEE2idV2idV1Ci2CiVid||2idTVV121(1)221(1)22idCEETidCEETViIVViIV1212.112.1.1ViVoR1R221oivRvR12.1.2ViVoR1R2211oivRvR12.212.2.1Vi1VoR1Rf1212()ffoiiRRvvvRRR2Vi212.2.2Vi1VoR1Rf321232321()(1)foiiRRRvvvRRRRRR2Vi2R312.312.3.1Vi1VoR1Rf3121321(1)ffoiiRRRvvvRRRRR2Vi2R312.3.2Vi1Vo1R1Rf1Rp1VoR3Rf2Rp2R2Vi2111122123221212312foiffooifffoiiRvvRRRvvvRRRRRvvvRRR12.4ViVoR1oivvRCsRpC011()()()(0)toiiovtvtdtvtdtVtRCRC12.5ViVoRoivRCsvRpC()()-iodvtvtRCdt1310ViVoR9R14rise/fall(Infineon)15RCRCCRRC16?RCViVo1111111oivsCvRCsRsCsw11wRC90RCViVo1111oivRRCsvRCsRsCRCssw11wRC90W1RLCRC17S=V0sin(2pif0t)+V1cos(2pif1t)+V2sin(2pif3t+90),1812PCB19CMOSPNNMOS5V0V0V0V0VVth5V5V5V0V5VGS5-V5-VthPMOSNMOS20mos5(Infineon)2121.1CurrentsourceP76ALLENCMOSSimplecurrentmirror:Whenappliedinlow-currentbiasing(atlevelsofmicroamprange),Rislargeandcostlyintermsofdiearea;IoutVCCRDisadvantageaffectedbytemperatureWidlarcurrentsource:Advantagestheoutputcurrentismuchlessdependentontheinputcurrentandpower-supplyvoltagethaninthesimplecurrentmirrorofFig.4.30a;allowscurrentsinmicroamprangetoberealizedwithmoderatevaluesofresistance;DisadvantageaffectedbytemperatureBipolarpeakingcurrentsource:Advantages:allowcurrentsinthenanoamprangetoberealizedwithmoderatevaluesofresistanceDisadvantageaffectedbytemperatureBase-emitterreferencedcurrentsourceOUTCCIVSwidlarcurrentsourceDisadvantageaffectedbytemperatureSelfbiasingcurrentsourceAdvantagesPower-supplysensitivitycanbegreatlyreducedDisadvantagesneedstart-upcircuittodriveitoutofthezero-currentstateaffectedbytemperatureAdvantagesVDDtemperaturecascodeVDD21.2VoltagesourceBase-emittervoltageorthresholdvoltageofatransistorquitetemperaturedependent1-2mV/KThethermalvoltagequitetemperaturedependentk/q=86uV/KBreakdownvoltageofzenerdiodequitetemperaturedependent6V710Vpowersupplyproducelargeamountofvoltagenoiseunderreverse-breakdownconditions;+3mV/KREFCCVVSBandgapreferencedbiasvoltage:lowtemperaturecoefficientlowpowersupplysensitivity22Simplecurrentmirrorsimplecurrentmirror1channellengthmodulation2thresholdoffsetbetweenthetwotransitor3imperfectgeometricalmatchingStandardcascadecurrentsinksimplecurrentmirrorVoutmin=2Vov+VtVinmin=2Vov+2VtHigh-swingcascadeM1M3VDSchannellengthmodulationcurrentmirrorImprovedhigh-swingcascadeM1M3VDSmirrorSelf-biashigh-swingcascadecurrentsourceWilsoncurrentmirrorVinmin=Vt2+Vov2+Vt3+Vov3Voutmin=Vt2+Vov2+Vov3RegulatedcascadecurrentmirrorWilsoncurrentmirror23mogr23,1VTH+,VTH-2symbol23.1CMOSIVOV'OV1R2RVDD=2VTHR2R1IVOV21122(1)TTHTTHRRVVVVRRRTVTV21122()(1)DDDDTTHTTHRRVVVVVVRRR23.2CMOSVDDVDDVIVOVIVO5V5V24,(,12....)25LC26VCO,(?)2728D2930RF31L,T3233DACADC34A/D35(),3637.0.707-3dB0.707-3dB()()38.|T(j)|1(T)=(K)+(F)=2n,n=0,1,2|T(j)|=1(T)=(K)+(F)=2n,n=0,1,2RCLCRCRCRCoVfVRC1owRC12ofRC1/3o()()()foVsFsVs|()|Fs()Fsow90-90RCViVoR1R2211oivRvR12ofRC21113RAR212RR39.40.P131=360=18078.5%0=180~360ExamplesCLASSARLRL1VoVCC-VcesatIoRLRL2IoIQVoIQ*RL2RL=RL3VoVCC-VcesatIoIQRL=RL3VoIoQIQIoI()CCCEsatVVoV()()CCCEsatVVIC1=2IQIC1=0Q1cutoffIoQ2IQ25%Psupply=2Vcc*IQQ2VCC*IQQ1VCC*IQQ10.5VCC*IQ0.5VCC*IQCMOSP351,ac25%CLASSBPUSH-PULLOCLhavingessentiallyzeropowerdissipationwthzeroinputsignal;Q1andQ2conductforalternatehalfcycles;efficiencyishigherthanCLASSA(ideally78.6%atfulloutputpower)Anotch(ordeadband)of2Vbe(on)inVicenteredaroundVi=0;+VCC-VCCCLASSBRLVo78.6%ac0CLASSBstandbypowerdissipationisessentially0()oCCCEsatCCVVVVRL2max2CCLLVPR2(singlesupply=()/24ooCCCLLLVVVPPPRR20.63oCCCCVVV(singleCP(singlemaxmaxmax220.2CLLPPP_()ctranCECCCCLCpviViRi2CCCLViR_ctranpoVVCC/2VCC/(2RL)__maxmax0.5ctranLpPCLASSABViQ1Vbe1Vbe2Vbe1+Vbe2=constantQ2ViQ2VbeVbe1Q1Vi=0Q1Q241(NPNPNP)abcd121212(1)CEOCEOCEOCEOIIIICEOIT2BET14232111212111FFnFFFPPPPPPnNNNNNAAAAAA4311vovAAswriset//sininoFsonoPniPPPNPPAP11vovAAsw1(0)()0(0)itvtt1()(1)(1)twtovovovtAeAe112.20.35risetwf44RC()VtCCV/()()[()(0)]tVtVVVeRC//()()()()(1)ttVtVVeVeRCV(0)=0_______________________________________________________________________1()()DLatch2----IntelPentium4()()3ococ4SetupHoldup5setupholdup,.6setuptimeholdtime7setupholdtimeviolation
本文标题:IC设计基础笔试面试常见题目(含详细答案)
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