AT60142F-DD15MMQ中文资料

1Rev.4408A–AERO–02/05FeaturesOperatingVoltage:3.3VAccessTime:–15nsfor3.3Vbiasedonly(AT60142F)–17nsfor5VTolerant(AT60142FT)VeryLowPowerConsumption–Active:650mW(Max)@15ns,540mW(Max)@25ns–Standby:3.5mW(Typ)WideTemperatureRange:-55to+125°CTTL-CompatibleInputsandOutputsAsynchronousDesignedon0.25µmRadiationHardenedProcessNoSingleEventLatchUpbelowLETThresholdof80MeV/mg/cm2TesteduptoaTotalDoseof300krads(Si)accordingtoMIL-STD-883Method1019500MilsWideFP36PackageESDBetterthan4000VfortheAT60142FESDBetterthan2000VfortheAT60142FTQualityGrades:ESCC,QML-QorVwithsmd5962-05208DescriptionTheAT60142F/FTareverylowpowerCMOSstaticRAMorganizedas524288x8bits.Atmelbringsthesolutiontoapplicationswherefastcomputingisasmandatoryaslowconsumption,suchasaerospaceelectronics,portableinstruments,orembarkedsystems.Utilizinganarrayofsixtransistors(6T)memorycells,theAT60142F/FTcombineanextremelylowstandbysupplycurrent(Typicalvalue=1mA)withafastaccesstimeat15nsoverthefullmilitarytemperaturerange.Thehighstabilityofthe6Tcellprovidesexcellentprotectionagainstsofterrorsduetonoise.TheFversionisbiasedat3.3Vandisnot5Vtolerant:itisavailableto15nsspecification.TheFTversionisavariantallowingfor5Vtolerance:itisavailablein17nsspecification.TheAT60142F/FTareprocessedaccordingtothemethodsofthelatestrevisionoftheMILPRF38535orESCC9000.Itisproducedonaradiationhardened0.25µmCMOSprocess.RadHard512Kx8VeryLowPowerCMOSSRAMAT60142FAT60142FT2AT60142F/FT4408A–AERO–02/05BlockDiagramPinConfigurationA0A1A2A3A4CSI/O1I/O2VccGNDI/O3I/O4WEA5A6A7A8A9123456789101112131415161718363534333231302928272625242322212019NCA18A17A16A15OEI/O8I/O7GNDVccI/O6I/O5A14A13A12A11A10N/C36-pin-Flatpack-500Mils3AT60142F/FT4408A–AERO–02/05PinDescriptionTable1.PinNamesTable2.TruthTable(1)NameDescriptionA0-A18AddressInputsI/O1-I/O8DataInput/OutputCSChipSelectWEWriteEnableOEOutputEnableVccPowerSupplyGNDGroundCSWEOEInputs/OutputsModeHXXZDeselect/Power-downLHLDataOutReadLLXDataInWriteLHHZOutputDisableNote:1.L=low,H=high,X=HorH,Z=highimpedance.4AT60142F/FT4408A–AERO–02/05ElectricalCharacteristicsAbsoluteMaximumRatings*Note:1.7VforFTversion.2.ForAT60142F.Itisbetterthan2000VforAT60142FT.MilitaryOperatingRangeRecommendedDCOperatingConditionsNote:1.FTversion:5.5VinDC,5.8Vintransientconditions.CapacitanceNote:1.Guaranteedbutnottested.SupplyVoltagetoGNDPotential:.........................-0.5V+4.6VDCInputVoltage:.....................................GND-0.5Vto4.6V(1)DCOutputVoltageHighZState:................GND-0.5Vto4.6VStorageTemperature:...................................-65°Cto+150°COutputCurrentIntoOutputs(Low):...............................20mAElectroStaticsDischargeVoltage(2):...........4000V(MILSTD883DMethod3015.3)*NOTE:StressesbeyondthoselistedunderAbsoluteMaxi-mumRatings”maycausepermanentdamagetothedevice.Thisisastressratingonlyandfunctionaloper-ationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedintheoperationalsectionsofthisspecificationisnotimplied.Exposuretoabsolutemaximumratingconditionsforextendedperiodsmayaffectdevicereliability.OperatingVoltageOperatingTemperatureMilitary3.3+0.3V-55°Cto+125°CParameterDescriptionMinTypMaxUnitVccSupplyvoltage33.33.6VGNDGround0.00.00.0VVILInputlowvoltageGND-0.30.00.8VVIHInputhighvoltage2.2–VCC+0.3(1)VParameterDescriptionMinTypMaxUnitCin(1)Inputlowvoltage––12pFCout(1)Outputhighvoltage––12pF5AT60142F/FT4408A–AERO–02/05DCParametersConsumptionParameterDescriptionMinimumTypicalMaximumUnitIIX(1)1.GNDVINVCC,GNDVOUTVCCOutputDisabled.2.FTversiononly:VIN=5.5V,VOUT=5.5V,OutputDisabled.3.VCCmin.IOL=8mA.4.VCCmin.IOH=-4mA.Inputleakagecurrent-1–1µAIOZ(1)Outputleakagecurrent-1–1µAIIH(2)at5.5VInputLeakageCurrent-1–10µAIOZH(2)at5.5VOutputLeakageCurrent-1–10µAVOL(3)Outputlowvoltage––0.4VVOH(4)Outputhighvoltage2.4––VSymbolDescriptionTAVAV/TAVAWTestConditionAT60142F-15AT60142FT-17UnitValueICCSB(1)1.CSVIHStandbySupplyCurrent–2.52.5mAmaxICCSB1(2)2.CSVCC-0.3V3.F=1/TAVAV,Iout=0mA,WE=OE=VIH,VIN=GND/VCC,VCCmax.4.F=1/TAVAW,Iout=0mA,W=VIL,OE=VIH,VIN=GND/VCC,VCCmax.StandbySupplyCurrent–22mAmaxICCOP(3)ReadDynamicOperatingCurrent15ns17ns25ns50ns1µs180-1507510-1701507510mAmaxICCOP(4)WriteDynamicOperatingCurrent15ns17ns25ns50ns1µs150-130120100-145130120100mAmax6AT60142F/FT4408A–AERO–02/05ACCharacteristicsTemperatureRange:................................................-55+125°CSupplyVoltage:........................................................3.3+0.3VInputPulseLevels:..................................................GNDto3.0VInputRiseandFallTimes:.......................................3ns(10-90%)InputandOutputTimingReferenceLevels:............1.5VOutputLoadingIOL/IOH:............................................SeeFigure1Figure1.ACTestLoadsWaveformsDataRetentionModeAtmelCMOSRAM'saredesignedwithbatterybackupinmind.Dataretentionvoltageandsupplycurrentareguaranteedovertemperature.Thefollowingrulesinsuredataretention:1.DuringdataretentionchipselectCSmustbeheldhighwithinVCCtoVCC-0.2V.2.OutputEnable(OE)shouldbeheldhightokeeptheRAMoutputshighimped-ance,minimizingpowerdiss