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SemiconductorDevicesandphysicsSemiconductorDevicesandphysics1.CrystalStructureofSolids2.QuantumTheoryofSolids3.SemiconductorinEquilibriumandCarrierTransportphenomena4.PNJunctionandMetal-Semiconductor5.BJT6.MOSFET7.OpticalDevice,AT&T,1947,1952,1954,,1958,,19611958()19611964()121980182010Transistors10K100K1M10M19751980198519901995404080808086802868038680486PentiumPentiumIII1K2000ITRSRoadmapIC---1,000,000,000SLSI(SuperLargeScaleIntegration)10,000,000~1,000,000,000ULSI(UltraLargeScaleIntegration)100,000~10,000,000VLSI(VeryLargeScaleIntegration)5,000~100,000LSI(LargeScaleIntegration)50~5,000MSI(MediumScaleIntegration)2~50SSI(SmallScaleIntegration)300~400300300200~300200200(mm)0.010.020.030.050.10.340M25M13M7M4M2MASIC/cm2()0.020.050.10.20.5190M50M25M13M7M4M/cm2()0.00020.00050.0010.0030.0070.01764G16G4G1G256M64MDRAM/()0.070.100.130.150.250.35(mm)2007200420011999199719950.350.250.18300mm200mm150mm1997NECn+n+P0.014:NECCorporationICIC(Å)100Å0.0130IC:CMOS,AlCuPiPNPPMDp+p+n+n+WContactPNN-•N-Vt•N-LDD•N-S/DP-•P-Vt•P-LDD•P-S/D(STI)VssVddNMOSPMOSVinVoutSTI(a)(b)(c)CMOS1,N2,P3,4,7,9,N-Vt,LDD,S/D5,8,10,P-Vt,LDD,S/D6,/11,12,CMOS:SGSThompsonCrystalStructureofSolidsSemiconductormaterialsCrystallinelatticeCrystallinelatticeCrystalline:Atomsmakingupthesolidarearrangedinaperiodicorder.()Amorphous:Atomsmakingupthesolidhavenoperiodicstructureatall.()Polycrystalline:Atomsmakingupthesolidhavesmallregionshortrangeperiodicstructures.()Lattice:Theperiodicarrangementofatomsinacrystal()Threetypesofsolids,classifiedaccordingtoatomicarrangement:(a)crystallineand(b)amorphousmaterialsareillustratedbymicroscopicviewsoftheatoms,whereas(c)polycrystallinestructureisillustratedbyamoremacroscopicviewofadjacentsingle-crystallineregions,suchas(a).ExamplesofCrystallineandNoncrystalllineSolidsGlassvsQuartzDiamondvscoalCoalvsgraphitePrimitiveandUnitCellParticularatomicarraybyadotthatiscalledalatticepoint.Thesinglecrystalwithitsregulargeometricperiodicityintheatomicarrangement.Arepresentativeunit,orgroupofatoms,isrepeatedatregularintervalsineachofthethreedimensionstoformthesinglecrystal.=theperiodicarrangementofatomsinthecrystaliscalledthelattice.Aunitcellisasmallvolumeofthecrystalthatcanbeusedtoreproducetheentirecrystal.(notauniqueentity)SpaceLatticesUnitcellUnitcellPrimitivecellPrimitivecellBasisvectorsBasisvectorsrr=p=paa++qqbb+s+sccLatticeconstantLatticeconstantThreeThreebasiccubiclatticebasiccubiclattice;;SimplecubicSimplecubicBodycentercubicBodycentercubicFacecentercubicFacecentercubicDiamondlatticeandDiamondlatticeandZincblendeZincblendelatticelatticeLatticeRepresentationsUnitcellsforthreetypesofcubiclatticestructures.BasicCrystalStructuresPackingofhardspheresinanfcclattice.CrystalplanesandMillerIndicesMillerindex1.latticevector(p,q,r)2.(p,q,r)(1/p,1/q,1/r)(h,k,l)3.(h,k,l)4.(h,k,l)MillerindexEquivalenceofthecubefaces({100}planes)byrotationoftheunitcellwithinthecubiclattice.Crystaldirectionsinthecubiclattice.Threelatticeplanes:(a)(100)plane,(b)(110)plane,(c)(111)planeInthesimplecubiclattices,the[hkl]directionisperpendiculartothe(hkl)plane.;thisperpendicularitymaynotbetrueinnoncubiclattices.TheDiamondStructureDiamondstructure:FCC1/4eg.SicrystalZincblendestructure:FCC1/4eg.GaAscrystalDiamondstructure:FCC1/4eg.SicrystalDiamondlatticestructure:(a)aunitcellofthediamondlatticeconstructedbyplacingatomsfromeachatominanfcc;(b)topview(alongany100direction)ofanextendeddiamondlattice.Thecoloredcirclesindicateonefccsublatticeandtheblackcirclesindicatetheinterpenetratingfcc.Zincblendestructure:FCC1/4eg.GaAscrystalAtomicBondsChemicalbondingbetweenatomsoccursincethereisanetdecreaseinthepotentialenergyofatomsinthebondedstate.=atomsinthebondedstateareinamorestableenergyconditionthanwhentheyareunbonded;ingeneral,chemicalbondsbetweenatomscanbedividedintotwogroups:primary(orstrongbonds)andsecondary(orweakbonds).(I)PrimaryAtomicBonds:(largeinteratomicforce)1.Ionicbonds:byaelectrontransferfromoneatomtoanothertoproduceionsthatarebondedtogetherbycoulombicforces(attractionofpositivelyandnegativelychargedions)=relativelystrongnondirectionalbond.2.Covalentbonds:bythesharingofelectronstoformabondwithalocalizeddirection.3.Metallicbonds:bythesharingofelectronsinadelocalizedmannertoformstrongnondirectionalbondingbetweenatoms.(GroupI)(II)SecondaryAtomicandMolecularBonds:1.PermanentDipoleBonds:relativelyweakintermolecularbondsareformedbetweenmoleculesthatpossesspermanentdipoles.Adipoleinamoleculeexistsduetoasymmetryinitselectrondensitydistribution.2.FluctuatingDipoleBonds:Veryweakelectricdipolebondingcantakeplaceamongatomsduetotheasymmetricaldistributionofelectrondensitiesaroundtheirnuclei=fluctuating:electrondensityiscontinuouslychangingwithtime.Inreality,crystalsareneverperfectandcontainvarioustypesofimperfectionsanddefectsthataffectmanyoftheirphysicalandmechanicalproperties,whichinturnaffectmanyimportantengineeringpropertiesofmaterialssuchasthecoldformabilityofalloys,theelectronicconductivityofsemiconductors,therateofmigrationofato
本文标题:联大电机系电子材料与元件应用实验室
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