大容量逆变电源IGBT并联应用的仿真分析

:2004-09-2523220062:1006-9348(2006)02-0197-03IGBT,,(,214122):IGBT(),MOSFET(),IGBT,IGBT,,,,IGBT:IGBT,,:;;;:TM743:BSimulationandAnalysisofIGBTsinParallelAppliedinHighCapacityInverterPowerZANGXiao-hui,HUIJing,SHENJin-fei(SouthernYangtzeUniversity,WuxiJiangsu214036,China)ABSTRACT:Wheninverterpowerisdevelopedasalargeoutputpower,itisusuallylimitedbytheelectriccurrentcapacityofasingleIGBT(InsulatedGateBipolarTransistor).IlluminatedbythesuccessofMOSFETsappliedinparallel,thispaperaimsattosolvethisproblembyusingtheparallelmethodofIGBTs.BasedonanalyzingtheIGBTpsoperatingmechanism,thispaperalsodescribestheelectriccircuitanditsoperatingprinciple.ThereasonsledtocurrentunbalancesofeachIGBTinparallelareanalyzed,andthecorrespondingsolutionsandthehybridICareproposed.ThetheoryanalysisandtheresultsofthecircuitsimulationshowthatthehighcapacityinverterpowerwiththeparallelmethodofIGBTsisavailable,inthiswayitcanenlargetheelectriccurrentcapacityofthewholemachineandincreasethepowerofinverter.KEYWORDS:IGBT;Parallel;Inverterpower;Simulation1IGBTGTRP-MOSFET,,:,,1[1],UPS,IGBT,IGBTIGBT[2-3]IGBT1IGBT,MOSFET,IGBT,,,IGBT22.1UPS,,2791(UVW),C1VD,,Z1Z4Vab,TZT2KVA2Z1Z4(1200V)IGBT,IGBT,2IGBT,3n32IGBT2.2IGBT4IGBTZ1Z2Z7Z8,Z3Z4Z5Z6,/180,,Z1Z2Z5Z6Z3Z4Z7Z80tT/2,Z1Z2,Z7Z8,Z3Z4,Z5Z6VAB=+VD(1),T/2tT,Z3Z4,Z5Z6,Z1Z2,Z7Z8VAB=-VD(2),VAB,IGBTVAB1804IGBT,VD,PWM,[1]3:0tT/2,IGBTIZ1=IZ2=IZ7=IZ8=ID/2(3)T/2tT,IGBTIZ3=IZ4=IZ5=IZ6=ID/2(4)3IGBTMOSFETRON,MOSFETIGBT,RON,IGBT,,,[4]3.11)IGBTIGBTton2),,5(a),,di/dtdu/dt,LS=0.01DN2LD+0.44(H)(5):DL;:cmN5(b),LS=1.1Umdi/dt(H)(6)8915IGBT:1.1;UmIGBT;di/dtIGBT(A/s)3),4)IGBT,IGBT:In=(1.5-2)ILm(0.8-0.9)np(7):1.52:;0.80.9:;np:IGBT;ILm:5),IGBT6)IGBT(RCD),(SOA)3.2IGBT,EXB851EXB841,,[3.5]6,,400A/600V300A/1200VIGBT,EXB851EXB8414,PSPICE3IGBT,2IGBTPSPICE,VD,IGBTCM200DY28HPSPICEIGBT,6IGBT72abVabIL83ABVABIL7IGBTVabIL:VD,IGBT8IGBTVABIL92Z1,103IGBTZ1,:nIGBT,(218)991,,,,Uz,;AVR,,,:[1].[J].,2001.3:13-14.[2],.[J].,2001.1:1-4.[3].[R].:02210185,2002-11-27.[4],,.[J].,2002,4:96-100.[5],,.[M],,1998-9.13-17.[6].[J].,2000,5:40-41.[7].[J].,2002,4:554-556.[](1964,12),(),,,,,,(1963,5),(),,,,,(199)9IGBTZ1I10IGBTZ1IpIGBTIGBT1/n,IGBTIGBT,,5IGBT,IGBT,PSPICE:IGBT,,,IGBTUPS,:[1].[M].,2002-8.[2],.IGBTMOSFETDCDC[J].,1998,1:65-67.[3],.MOSFET[J].,2003,19(4):352-355.[4],.[M].,2002-7.[5]JHe,MEJacobs,Non-DissipativeDynatnicCurrent-SharingSnubberforParallelBoostConnectedIGBTsinHighPowerConverter[C].IEEEAPECConf.p99,1999,2:1105-1111.[](1980-),(),,,(1957-),(),,,,(1955-),(),,,,,2,10812