如何正确读懂英飞凌的IGBT的资料

InfineondatasheetunderstandingIFXAIMZhouYizhengPage2ForinternaluseonlyInfineondatasheetunderstandingCurrentparametersCurrentparametersVoltageparametersVoltageparametersSwitchingparametersSwitchingparametersDiodeparametersDiodeparametersThermalparametersThermalparametersModuleparametersModuleparametersPage3ForinternaluseonlyCurrentparameters!Nominalcurrent(ICnom)Specifiedasdatacode:FF450R17ME3Nominalcurrentisspecifiedat80℃,25℃valueisalsogivenasreference)**@(maxmax,maxthjcCnomjcesatjcRITVTT−=Calculatedvaluewillbehigherthandatasheetvalue,allnominalcurrentistakenasintegerThisvaluejustrepresentsIGBTDCbehavior,canbeareferenceofchoosingIGBT,butnotyardstick.Page4ForinternaluseonlyCurrentparameters!Pulsecurrent(ICRMIRBSOA)ICRMisdefinedasrepetitiveturnonpulsecurrentIRBSOAisdefinedasmaximumturnoffcurrentICRMIRBSOAVCEICVGE1msisjusttestcondition,realpulsewidthisdependonthermalPage5ForinternaluseonlyCurrentparameters!Shortcircuitcurrent(ISC)IscIShortbeforeSwitchOnIscIIShortafterSwitchOnVCEICVGEVCEICVGETheshortcircuitcurrentvalueisatypicalvalue.Inapplications,theshortcircuittimeshouldnotexceed10us.Page6ForinternaluseonlyCurrentparameters!Shortcircuitcondition:¬VGE:gatevoltage(15V)¬VCC:DCbusvoltage¬Tvj:shortcircuitstarttemperatureVGEISCtSCInfineontestshortcircuitatmaximumoperationTjPage7ForinternaluseonlyVoltageparameters!Blockingvoltage(VCES)VCESspecifiedatTj=25℃.HigherTj,higherblockingvoltageRBSOAChiplevelModulelevelDuetostrayinductanceinsidemoduleδLdtdiV*/=∆VCESiseasiesttobeexceedduringturnoff,duetoexternalandinternalstrayinductanceVCEScannotbeviolatedatanycondition,otherwiseIGBTwouldbreakthoughPage8ForinternaluseonlyVoltageparameters!Saturationvoltage(VCEsat)VCEsatisspecifiedatnominalcurrent,bothTj=25℃and125℃aregivenInfineonIGBTareallpositivetemperaturecoefficientGoodforparallelingVCEsatvalueistotallyatchiplevel,excludingleadresistancePage9ForinternaluseonlyVoltageparametersVCEsatincreasewithVGEdecreasingVCEsatincreasewithICincreasingVGEisnotrecommendedtousetoosmall,ThisincreasesIGBTbothconductionandswitchinglossesPage10ForinternaluseonlyVoltageparametersVCEsatvalueisusedtocalculateconductionlossesBasicdataforconductionlossescalculationCCETCEIRVV*0+=)1()2()1()2(CCCECECCECEIIVVIVR−−=∆∆=VT0ΔVCERCEΔICTangentpointshouldsetclosetooperatingpoint)**318*(*cos*)4**(212020,PCEPTPCEPTIGBTcondIRIVmIRIVPπϕπ+++=ForSPWMcontrol,theconductionlossesis:m:modulationfact;IP:outputpeakcurrent;cosφ:powerfactorPage11ForinternaluseonlySwitchingparameters!Internalgateresistor(RGint)Torealizemoduleinternalchipcurrentsharing,moduleintegrateinternalgateresistor.ThisvalueshouldbeconsideredasonepartoftotalgateresistortocalculatepeakcurrentcapabilityofadriverPage12ForinternaluseonlySwitchingparameters!Externalgateresistor(RGext)Externalgateresistoriswhatusercanset,thisvalueinfluenceIGBTswitchingperformanceTheminimumrecommendedRgextisshownintheswitchingtestconditionUsercangetdifferentRGonandRGoffbyadecouplingdiodeMinimumRGonislimitedbyturnondi/dt,minimumRGoffislimitedbyturnoffdv/dt.ToosmallRGcauseoscillationandmaydestroyIGBTanddiode221,//RRRRRGoffGon==Thisisjustanexample.TherearealotofcircuittorealizeitPage13ForinternaluseonlySwitchingparameters!Externalgatecapacitor(CGE)HighvoltagemoduleisrecommendedtousedexternalCGEtocontrolgateturnonspeed.WithexternalCGE,turnondi/dtanddv/dtcanbedecoupled.Thishelptorealizelowturnonlosseswithlimitedturnondi/dtdi/dtCGEdv/dtdi/dtRGdv/dtPage14ForinternaluseonlySwitchingparameters!RgintlimitationextgR_int_gRoRint_int)15(1515GdatasheetGextGGextORRRRRVss+−−≤++−MinimumRGextforIGBTmaxint15OGGextOIRRRVss≤++−MinimumRGextforDrivercapabilityIfdrivercapabilityisnotenough,IGBTswitchingperformancewillbeseriouslyinfluencedPage15ForinternaluseonlySwitchingparameters!Gatecharge(QG)!Cies,CresThisvalueisspecifiedat+/-15V,usedtocalculatedrivingpowerECGCGCCGECECCies=CGE+CGC:Inputcapacitance(outputshorted)Coss=CGC+CEC:Outputcapacitance(inputshorted)Cres=CGC:Reversetransfercapacitance(Millercapacitance)fVQPGEg⋅∆⋅=fVCPGEies⋅∆⋅⋅=25Requiredgatepoweratswitchingfrequencyf:Page16ForinternaluseonlySwitchingparameters!Switchingtime(tdon,tr,tdoff,tf)ThesevaluesaregreatlyinfluencedbyIG(RG),IC,VGE,Tj.Thesevaluecanbeusedtodeterminethedeadtime:5.1*)))))(((minmaxminmaxmaxPLHPHLdonfdoffDTtttttt−+−+=tPHLmax:driveroutputhightolowdelaytPLHmin:driveroutputlowtohighdelayPage17ForinternaluseonlySwitchingparametersvGEvCEiCttiC(t)vCE(t)0,1*VGEtd(on)tr0,9*ICM0,1*ICM0,02*VCCICMVCE0,9*VGE0,9*ICM0,1*ICMtd(off)tf•td(off):90%VGEto90%ICM•td(on):10%VGEto10%ICM•tr:10%ICMto90%ICM•tf:90%ICMto10%ICMPage18ForinternaluseonlySwitchingparameters!Switchinglosses(Eon,Eoff)•Eoff:10%VCEto2%IC•Eon:10%ICto2%VCEInfineondefineswitchinglossesby“10%-2%”integrationlimit.Whilesomecompetitorsdefineswitchinglossesby“10%-10%”integrationlimit.Thisleadsto10–25%lowerlossesvalue.Page19ForinternaluseonlySwitchingparametersEon,EoffdependonIC,VCE,drivercapability(VGE,IG,RG),Tjandstrayinductance.WeassumethatEon/EoffisinproportionalwithIC,andincertainrangeinproportionalwithVCE(20%)testCECEnomCCnomoffof