CMOS工艺中的元件及版图

HuazhongUniversityofScienceandTechnology,Wuhan,ChinaEST-ICCCMOSEST-ICC2CMOS•MOS––––••••EST-ICC3CMOS•MOS•––•••EST-ICC4CMOS•MOS••–––MOS–••EST-ICC5CMOS•MOS•••–-––MOS–“”•EST-ICC6CMOS•MOS••••–PNPBJT–PSD/NWELLDiode–NSD/P-epiDiodeEST-ICC7MOS•MOS––CMOSPMOSNMOS–MOSEST-ICC8MOS•NMOSDSBGNMOSNMOSNMOSNNNNNNNPFOXFOXDGSBLWDGSBEST-ICC9MOS•PMOSDSBGPMOSPMOSPMOSP-substrateP-substrateN-N-PPPN-FOXFOXNNDGSBLWDGSBEST-ICC10MOS–,MOS,S,G,D,B.•MOS–MOS,(I-V):IDS=k•W/L•[(VG-VT-VS)2-(VG-VT-VD)2]EST-ICC11MOS•MOS–VG,VS,VD,,,VT.–k,k=µ•Cox/2,µ,,Cox,–W,LMOSFET,–Lmin——,0.35um,0.18um.W,W,,.EST-ICC12MOS•MOS1.IDS=0IDS=k•W/L•[(VG-VT-VS)2-(VG-VT-VD)2]IDS=k•W/L•[(VG-VT-VS)2-(VG-VT-VD)2]2.0≤--STGVVV0,0≤----DTGSTGVVVVVV0,0----DTGSTGVVVVVV[]FBSFTTVVVΦ-+Φ+=220gEST-ICC13MOS,MOS1MOS2VddGndoutinP-substrateP-substrateN-N-NNPPNNNNN-PFOXFOXNNMOS1MOS2BSGDDSBGEST-ICC14MOSD,S.,DS,,I=I1+I2.,,,.D2S2B2G2DSBGD1S1B1G1DSII1I2M1M2MeffEST-ICC15MOS*:SD.,,:I=I1=I2.D2S2B2G2DSBGD1S1B1G1DSII1I2M1M2MeffEST-ICC16MOS•MOS*P1P2N1N2P1P2N1N2P1P2N2N1EST-ICC17•***EST-ICC18•**RRRRRRRRRRCCCCCCCCCEST-ICC19•*(,)——0.05/*———1015/*N——2030/EST-ICC20substratetwh⎥⎥⎦⎤⎢⎢⎣⎡⎟⎠⎞⎜⎝⎛+⎟⎠⎞⎜⎝⎛++=5.025.006.106.177.0hthwhwCePloyMetal1Metal2Metal3Metal4(um)0.250.350.450.500.60(aF/um*um)9030159.07.0(aF/um)110805040304-metal0.25umtechnologyEST-ICC21•P123EST-ICC22•–––EST-ICC23MOSMOS(MOSFET)MOS.EST-ICC24•*——V=RI**EST-ICC25•P*.*,.,,.R=Rpoly-Si•L/W*Rpoly-Si=1kEST-ICC26•NWELLPN+N+NN*,,R=Rwell•L/W*Rwell=0.85kN+implantN+implantactiveEST-ICC27•MOS*MOS*,()()[]22DTGSTGSDDSDSVVVVVVkVVIVR------==EST-ICC28•*——1015/*N——2030/N+implantN+implantactiveEST-ICC29•*——Q=CV**EST-ICC30•-*,,*PN+11N+N+implantforcapN+implantforcapactiveEST-ICC31PN+•-*()22101VVCCaa++≈252141105:105:----××VVaa*1*——20%C*MOSEST-ICC32•-*,,*-*0.7fF/um*umP12P21EST-ICC33•MOS*MOS,,.,,S(D).*,.oxtWLC⋅=eCchRsPN+N+Vc+-**EST-ICC34•MOS**VcCchMOSC/VEST-ICC35•“”***(50~60%C)PC1C2C3C4CpC=C1+C2+C3+C41234EST-ICC36(BJT)•BJT**NCMOSPNPBJT*EST-ICC37BJT•PNPBJTPN+NNPP+P+BECECB1C2WB3WBBEAWBEST-ICC38BJT•*ISAWB**•iCvBE⎟⎟⎠⎞⎜⎜⎝⎛=tBESCVvIiexpBCFii=bEST-ICC39Diode•**NCMOSPSD/NWELLNSD/P-epiDiode*ESDEST-ICC40•PSD/NWELLDiodePN+NNPP+CA1PNPBJTBJTbeta0.11023AEST-ICC41•NSD/P-epiDiodePN+PP+CA1C2ESD2AEST-ICC42•*ISA*-*PN⎥⎦⎤⎢⎣⎡-⎟⎟⎠⎞⎜⎜⎝⎛=1exptDSDVvIiEST-ICC43•CMOS–MOS––––BJT••HuazhongUniversityofScienceandTechnology,Wuhan,ChinaEST-ICCTheEndThanks