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CMOS工艺技术CMOS工艺流程∶CSMC-HJWaferFabricationProcessTechnologyCMOSCMOSStartingwithasiliconwaferCrossSectionoftheSiliconWaferMagnifyingtheCrossSectionCMOSn/p-wellFormationGrowThinOxideDepositNitrideDepositResistsiliconsubstrateUVExposureDevelopResistEtchNitriden-wellImplantRemoveResistCMOSn/p-wellFormationsiliconsubstrateGrowOxide(n-well)RemoveNitridep-wellImplantRemoveOxideTwin-wellDrive-inp-welln-wellRemoveDrive-InOxidesiliconsubstratep-welln-wellCMOSLOCOSIsolationGrowThinOxideDepositNitrideDepositResistUVExposureDevelopResistEtchNitrideRemoveResistCMOSLOCOSIsolationsiliconsubstratep-welln-wellDepositResistUVExposureDevelopResistFieldImplantBRemoveResistGrowFieldOxideFoxRemoveNitrideRemoveOxidesiliconsubstratep-welln-wellGrowScreenOxideCMOSTransistorFabricationVtImplantDepositResistUVExposureDevelopResistPunchthroughImplantRemoveResistRemoveOxideFoxsiliconsubstratep-welln-wellGrowGateOxideCMOSTransistorFabricationDepositPolySiPolySiImplantpolySipolySiDepositResistUVExposureDevelopResistEtchPolySiRemoveResistFoxsiliconsubstratep-welln-wellCMOSTransistorFabricationDepositThinOxideDepositResistUVExposureDevelopResistn-LDDImplantRemoveResistFoxpolySipolySisiliconsubstratep-welln-wellCMOSTransistorFabricationDepositResistUVExposureDevelopResistp-LDDImplantRemoveResistDepositSpacerOxideEtchSpacerOxideFoxpolySipolySisiliconsubstratep-welln-wellCMOSTransistorFabricationDepositResistUVExposureDevelopResistn+S/DImplantn+n+RemoveResistFoxpolySipolySisiliconsubstratep-welln-wellCMOSTransistorFabricationDepositResistUVExposureDevelopResistp+S/DImplantp+p+RemoveResistFoxpolySipolySin+n+siliconsubstratep-welln-wellCMOSContacts&InterconnectsDepositBPTEOSBPTEOSBPSGReflowPlanarizationEtchbackDepositResistUVExposureDevelopResistContactEtchbackRemoveResistFoxpolySipolySin+n+p+p+siliconsubstratep-welln-wellCMOSContacts&InterconnectsDepostMetal1Metal1DepositResistUVExposureDevelopResistEtchMetal1RemoveResistFoxpolySipolySip+p+n+n+BPTEOSsiliconsubstratep-welln-wellCMOSContacts&InterconnectsDepositIMD1IMD1DepositSOGSOGPlanarizationEtchbackDepositResistUVExposureDevelopResistViaEtchRemoveResistFoxpolySipolySip+p+Metal1n+n+BPTEOSsiliconsubstratep-welln-wellCMOSContacts&InterconnectsDepositMetal2Metal2Metal2DepositResistUVExposureDevelopResistEtchMetal2RemoveResistDepositPassivationFoxpolySipolySip+p+Metal1n+n+BPTEOSIMD1SOGPassivation
本文标题:CMOS的工艺技术
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