AO4468

SymbolVDSVGSIDMTJ,TSTGSymbolTypMax31405975RθJL1624MaximumJunction-to-LeadCSteady-State°C/WThermalCharacteristicsParameterUnitsMaximumJunction-to-AmbientAt≤10sRθJA°C/W°C/WAbsoluteMaximumRatingsTA=25°CunlessotherwisenotedVV±20PulsedDrainCurrentBPowerDissipationTA=25°CGate-SourceVoltageDrain-SourceVoltageMaximumJunction-to-AmbientASteady-State11.69.250ContinuousDrainCurrentAMaximumUnitsParameterTA=25°CTA=70°C30WJunctionandStorageTemperatureRangeAPD°C3.12-55to150TA=70°CIDAO4468N-ChannelEnhancementModeFieldEffectTransistorFeaturesVDS(V)=30VID=11.6A(VGS=10V)RDS(ON)14mΩ(VGS=10V)RDS(ON)22mΩ(VGS=4.5V)GeneralDescriptionTheAO4468usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.ThesourceleadsareseparatedtoallowaKelvinconnectiontothesource,whichmaybeusedtobypassthesourceinductance.StandardProductAO4468isPb-free(meetsROHS&Sony259specifications).AO4468LisaGreenProductorderingoption.AO4468andAO4468Lareelectricallyidentical.SOIC-8GSSSDDDDGDSAlpha&OmegaSemiconductor,Ltd.AO4468SymbolMinTypMaxUnitsBVDSS30V0.0031TJ=55°C5IGSS±100nAVGS(th)1.523VID(ON)50A1114TJ=125°C172117.422mΩgFS19SVSD0.731VIS4.5ACiss9551200pFCoss145pFCrss112pFRg0.50.85ΩQg(10V)1724nCQg(4.5V)912nCQgs3.4nCQgd4.7nCtD(on)56.5nstr67.5nstD(off)1925nstf4.56nstrr1921nsQrr912nCTHISPRODUCTHASBEENDESIGNEDANDQUALIFIEDFORTHECONSUMERMARKET.APPLICATIONSORUSESASCRITICALCOMPONENTSINLIFESUPPORTDEVICESORSYSTEMSARENOTAUTHORIZED.AOSDOESNOTASSUMEANYLIABILITYARISINGOUTOFSUCHAPPLICATIONSORUSESOFITSPRODUCTS.AOSRESERVESTHERIGHTTOIMPROVEPRODUCTDESIGN,FUNCTIONSANDRELIABILITYWITHOUTNOTICE.MaximumBody-DiodeContinuousCurrentInputCapacitanceOutputCapacitanceTurn-OnDelayTimeDYNAMICPARAMETERSVGS=10V,VDS=15V,ID=11.6ATotalGateChargeGateDrainChargeVGS=0V,VDS=15V,f=1MHzSWITCHINGPARAMETERSTurn-OnRiseTimeTurn-OffDelayTimeVGS=10V,VDS=15V,RL=1.30Ω,RGEN=3ΩTurn-OffFallTimemΩVGS=4.5V,ID=10AIS=1A,VGS=0VVDS=5V,ID=11.6ARDS(ON)StaticDrain-SourceOn-ResistanceForwardTransconductanceDiodeForwardVoltageIDSSµAVDS=24V,VGS=0VVDS=0V,VGS=±20VZeroGateVoltageDrainCurrentGate-BodyleakagecurrentElectricalCharacteristics(TJ=25°Cunlessotherwisenoted)STATICPARAMETERSParameterConditionsOnstatedraincurrentID=250µA,VGS=0VVGS=4.5V,VDS=5VVDS=VGSID=10mAGateThresholdVoltageDrain-SourceBreakdownVoltageBodyDiodeReverseRecoveryTimeBodyDiodeReverseRecoveryChargeIF=11.6A,dI/dt=100A/µsVGS=10V,ID=11.6AReverseTransferCapacitanceIF=11.6A,dI/dt=100A/µsTotalGateChargeGateSourceChargeGateresistanceVGS=0V,VDS=0V,f=1MHzA:ThevalueofRθJAismeasuredwiththedevicemountedon1in2FR-4boardwith2oz.Copper,inastillairenvironmentwithTA=25°C.Thevalueinanygivenapplicationdependsontheuser'sspecificboarddesign.Thecurrentratingisbasedonthet≤10sthermalresistancerating.B:Repetitiverating,pulsewidthlimitedbyjunctiontemperature.C.TheRθJAisthesumofthethermalimpedencefromjunctiontoleadRθJLandleadtoambient.D.ThestaticcharacteristicsinFigures1to6areobtainedusing80µspulses,dutycycle0.5%max.E.Thesetestsareperformedwiththedevicemountedon1in2FR-4boardwith2oz.Copper,inastillairenvironmentwithTA=25°C.TheSOAcurveprovidesasinglepulserating.Rev0:Apr2006Alpha&OmegaSemiconductor,Ltd.AO4468TYPICALELECTRICALANDTHERMALCHARACTERISTICSVDS=VGSID=1mA1.41.850800140220801400.5157THISPRODUCTHASBEENDESIGNEDANDQUALIFIEDFORTHECONSUMERMARKET.APPLICATIONSORUSESASCRITICALCOMPONENTSINLIFESUPPORTDEVICESORSYSTEMSARENOTAUTHORIZED.AOSDOESNOTASSUMEANYLIABILITYARISIOUTOFSUCHAPPLICATIONSORUSESOFITSPRODUCTS.AOSRESERVESTHERIGHTTOIMPROVEPRODUCTDESIGN,FUNCTIONSANDRELIABILITYWITHOUTNOTICE01020304050607001234VDS(Volts)Fig1:On-RegionCharacteristicsID(A)VGS=3.5V4.5V10V6V051015202530351.522.533.544.5VGS(Volts)Figure2:TransferCharacteristicsID(A)51015202505101520ID(A)Figure3:On-Resistancevs.DrainCurrentandGateVoltageRDS(ON)(mΩ)1.0E-051.0E-041.0E-031.0E-021.0E-011.0E+001.0E+010.00.20.40.60.81.0VSD(Volts)Figure6:Body-DiodeCharacteristicsIS(A)25°C125°C0.811.21.41.61.80255075100125150175Temperature(°C)Figure4:On-Resistancevs.JunctionTemperatureNormalizedOn-ResistanceVGS=10VID=11.6AVGS=4.5VID=10A1020304050246810VGS(Volts)Figure5:On-Resistancevs.Gate-SourceVoltageRDS(ON)(mΩ)ID=11.6A25°C125°CVDS=5VVGS=4.5VVGS=10V25°C125°CAlpha&OmegaSemiconductor,Ltd.AO4468TYPICALELECTRICALANDTHERMALCHARACTERISTICSVDS=VGSID=1mA1.41.850800140220801400.5157THISPRODUCTHASBEENDESIGNEDANDQUALIFIEDFORTHECONSUMERMARKET.APPLICATIONSORUSESASCRITICALCOMPONENTSINLIFESUPPORTDEVICESORSYSTEMSARENOTAUTHORIZED.AOSDOESNOTASSUMEANYLIABILITYARISIOUTOFSUCHAPPLICATIONSORUSESOFITSPRODUCTS.AOSRESERVESTHERIGHTTOIMPROVEPRODUCTDESIGN,FUNCTIONSANDRELIABILITYWITHOUTNOTICE0246810048121620Qg(nC)Figure7:Gate-ChargeCharacteristicsVGS(Volts)0250500750100012501500051015202530VDS(Volts)Figure8:CapacitanceCharacteristicsCapacitance(pF)Ciss010203040500.00010.0010.010.1110100PulseWidth(s)Figure10:SinglePulsePowerRatingJunction-to-Ambient(NoteE)Power(W)0.010.11100.000010.00010.0010.010.11101001000PulseWidth(s)Figure11:NormalizedMaximumTransientThermalImpedanceZθJANormalizedTransientThermalResistance