FF450R12KT4中文说明书

1技术信息/TechnicalInformationFF450R12KT4IGBT-模块IGBT-modulespreparedby:MKapprovedby:WRdateofpublication:2013-11-04revision:3.0ULapproved(E83335)62mmC-Series模块采用第四代高速沟槽栅/场终止IGBT和HE型发射极控制二极管62mmC-SeriesmodulewithfastTrench/FieldstopIGBT4andEmitterControlledHEdiodeVCES=1200VICnom=450A/ICRM=900A典型应用TypicalApplications••大功率变流器HighPowerConverters••电机传动MotorDrives••UPS系统UPSSystems••风力发电机WindTurbines电气特性ElectricalFeatures••提高工作结温TvjopExtendedOperationTemperatureTvjop••低开关损耗LowSwitchingLosses••低VCEsatLowVCEsat••无与伦比的坚固性UnbeatableRobustness••VCEsat带正温度系数VCEsatwithpositiveTemperatureCoefficient机械特性MechanicalFeatures••4kV交流1分钟绝缘4kVAC1minInsulation••封装的CTI400PackagewithCTI400••高爬电距离和电气间隙HighCreepageandClearanceDistances••高功率密度HighPowerDensity••绝缘的基板IsolatedBasePlate••标封装StandardHousingModuleLabelCodeBarcodeCode128DMX-CodeContentoftheCodeDigitModuleSerialNumber1-5ModuleMaterialNumber6-11ProductionOrderNumber12-19Datecode(ProductionYear)20-21Datecode(ProductionWeek)22-232技术信息/TechnicalInformationFF450R12KT4IGBT-模块IGBT-modulespreparedby:MKapprovedby:WRdateofpublication:2013-11-04revision:3.0IGBT,逆变器/IGBT,Inverter最大额定值/MaximumRatedValues集电极－发射极电压Collector-emittervoltageTvj=25°CVCES1200V连续集电极直流电流ContinuousDCcollectorcurrentTC=100°C,Tvjmax=175°CTC=25°C,Tvjmax=175°CICnomIC450580AA集电极重复峰值电流RepetitivepeakcollectorcurrenttP=1msICRM900A总功率损耗TotalpowerdissipationTC=25°C,Tvjmax=175°CPtot2400W栅极－发射极峰值电压Gate-emitterpeakvoltageVGES+/-20V特征值/CharacteristicValuesmin.typ.max.集电极－发射极饱和电压Collector-emittersaturationvoltageIC=450A,VGE=15VIC=450A,VGE=15VIC=450A,VGE=15VVCEsat1,752,052,102,15VVVTvj=25°CTvj=125°CTvj=150°C栅极阈值电压GatethresholdvoltageIC=17,0mA,VCE=VGE,Tvj=25°CVGEth5,25,86,4V栅极电荷GatechargeVGE=-15V...+15VQG3,60µC内部栅极电阻InternalgateresistorTvj=25°CRGint1,9Ω输入电容Inputcapacitancef=1MHz,Tvj=25°C,VCE=25V,VGE=0VCies28,0nF反向传输电容Reversetransfercapacitancef=1MHz,Tvj=25°C,VCE=25V,VGE=0VCres1,10nF集电极-发射极截止电流Collector-emittercut-offcurrentVCE=1200V,VGE=0V,Tvj=25°CICES5,0mA栅极-发射极漏电流Gate-emitterleakagecurrentVCE=0V,VGE=20V,Tvj=25°CIGES400nA开通延迟时间(电感负载)Turn-ondelaytime,inductiveloadIC=450A,VCE=600VVGE=±15VRGon=1,0Ωtdon0,160,170,18µsµsµsTvj=25°CTvj=125°CTvj=150°C上升时间(电感负载)Risetime,inductiveloadIC=450A,VCE=600VVGE=±15VRGon=1,0Ωtr0,040,0450,05µsµsµsTvj=25°CTvj=125°CTvj=150°C关断延迟时间(电感负载)Turn-offdelaytime,inductiveloadIC=450A,VCE=600VVGE=±15VRGoff=1,0Ωtdoff0,450,520,54µsµsµsTvj=25°CTvj=125°CTvj=150°C下降时间(电感负载)Falltime,inductiveloadIC=450A,VCE=600VVGE=±15VRGoff=1,0Ωtf0,100,160,18µsµsµsTvj=25°CTvj=125°CTvj=150°C开通损耗能量(每脉冲)Turn-onenergylossperpulseIC=450A,VCE=600V,LS=30nHVGE=±15V,di/dt=9000A/µs(Tvj=150°C)RGon=1,0ΩEon19,030,036,0mJmJmJTvj=25°CTvj=125°CTvj=150°C关断损耗能量(每脉冲）Turn-offenergylossperpulseIC=450A,VCE=600V,LS=30nHVGE=±15V,du/dt=4500V/µs(Tvj=150°C)RGoff=1,0ΩEoff26,040,043,0mJmJmJTvj=25°CTvj=125°CTvj=150°C短路数据SCdataVGE≤15V,VCC=800VVCEmax=VCES-LsCE·di/dtISC1800ATvj=150°CtP≤10µs,结－外壳热阻Thermalresistance,junctiontocase每个IGBT/perIGBTRthJC0,062K/W外壳－散热器热阻Thermalresistance,casetoheatsink每个IGBT/perIGBTλPaste=1W/(m·K)/λgrease=1W/(m·K)RthCH0,03K/W在开关状态下温度TemperatureunderswitchingconditionsTvjop-40150°C3技术信息/TechnicalInformationFF450R12KT4IGBT-模块IGBT-modulespreparedby:MKapprovedby:WRdateofpublication:2013-11-04revision:3.0二极管,逆变器/Diode,Inverter最大额定值/MaximumRatedValues反向重复峰值电压RepetitivepeakreversevoltageTvj=25°CVRRM1200V连续正向直流电流ContinuousDCforwardcurrentIF450A正向重复峰值电流RepetitivepeakforwardcurrenttP=1msIFRM900AI2t-值I²t-valueVR=0V,tP=10ms,Tvj=125°CVR=0V,tP=10ms,Tvj=150°CI²t3400032000A²sA²s特征值/CharacteristicValuesmin.typ.max.正向电压ForwardvoltageIF=450A,VGE=0VIF=450A,VGE=0VIF=450A,VGE=0VVF1,701,751,752,25VVVTvj=25°CTvj=125°CTvj=150°C反向恢复峰值电流PeakreverserecoverycurrentIF=450A,-diF/dt=9000A/µs(Tvj=150°C)VR=600VVGE=-15VIRM490550560AAATvj=25°CTvj=125°CTvj=150°C恢复电荷RecoveredchargeIF=450A,-diF/dt=9000A/µs(Tvj=150°C)VR=600VVGE=-15VQr44,080,090,0µCµCµCTvj=25°CTvj=125°CTvj=150°C反向恢复损耗（每脉冲）ReverserecoveryenergyIF=450A,-diF/dt=9000A/µs(Tvj=150°C)VR=600VVGE=-15VErec19,035,039,0mJmJmJTvj=25°CTvj=125°CTvj=150°C结－外壳热阻Thermalresistance,junctiontocase每个二极管/perdiodeRthJC0,11K/W外壳－散热器热阻Thermalresistance,casetoheatsink每个二极管/perdiodeλPaste=1W/(m·K)/λgrease=1W/(m·K)RthCH0,055K/W在开关状态下温度TemperatureunderswitchingconditionsTvjop-40150°C4技术信息/TechnicalInformationFF450R12KT4IGBT-模块IGBT-modulespreparedby:MKapprovedby:WRdateofpublication:2013-11-04revision:3.0模块/Module绝缘测试电压IsolationtestvoltageRMS,f=50Hz,t=1min.VISOL4,0kV模块基板材料MaterialofmodulebaseplateCu内部绝缘Internalisolation基本绝缘(class1,IEC61140)basicinsulation(class1,IEC61140)Al2O3爬电距离Creepagedistance端子-散热片/terminaltoheatsink端子-端子/terminaltoterminal29,023,0m