GaN半导体研究与进展

:1999-06-03GaN(,050051)GaNGaNTN365TN30ResearchandDevelopmentofGaNSemiconductorGuZhongliang(HebeiSemiconductorResearchInstitute,Shijiazhuang050051)AbstractInthispaper,thekeytechnologiesforGaNmaterialsanddevicesarereviewed.TheprogressofGaNsemiconductorinmicroelectronicsandoptoelectronicsispresented.KeywordsGaNOptoelectronicsMicroelectronicsWidebandgapsemiconductor1,GaN,GaN;GaN,GaNGaN,,SiC,GeSiGaAsInP,,2GaNGaN,,,GaNLEDGaN,GaN12GaN,90,,,0136419998©1995-2004TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.1GaNEg(300K)=3139eVEg(116K)=3150eV(T=300K)dEgö(dT)=-61010-4eVöK(T=300K)dEgö(dP)=-41210-3eVökbara=013189nma=015185nm(T=300K)$aöa=515910-6K$cöc=311710-6Kk=113WöcmKn(1eV)=2133n(3138eV)=2167E0=819E0=915E0=5135mc=01200102m0(T=300K)A1(TO)=532cm-1E1(TO)=560cm-1E2=1441569cm-1A1(LO)=710cm-1E1(LO)=741cm-12GaN(T=300K)Eg=31300102eVEg=3145eVEg=312eV(T=300K)a=0145201455nma=0145nma=014531nma=0145nma=014520105nm2(T=53K)31196eV2(T=53K)31262eV740cm-1403cm-13GaN,(MBE),,,GaN,,MBEMOCVDSiCSiGaAsGaP,MBEMOCVDGaNMBEË2Í,MBEGaN,(ECR)(RF)(PE)N,RF(ECR)1000MOCVD,MBE,AlGaNMBE,(RHEED),,GaAlË,NH3N,Ë,800AlN,GaNnGaN,nNH3CRMBEpGaN,21018cm-3,25cm2öVsRMBEpGaN,90GaN,,p,pGaN,GaNInGaNAlGaN,LEDLDFET,4GaNGaN,MBE1136419998©1995-2004TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.GaN,GaNGaN(MESFET)(HFET)(MODFET)AlGaNöGaN(2000cm2öVs)(3107cmös),;GaN(314eV),,GaNöAlGaN1GaNGaAsSiCMESFET,GaNGaNMESFETGaN,8GHz4WömmRF,50%,23dBm20dB1LmGaNMESFETftfmax817GHz,,GaNMESFETft2040GHz1GaNGaAsSiCGaNHEMT2,GaN,AlGaNöGaNHEMT2GHz111Wömm18GHz3Wömm50GHz94GHzX1WGaNHEMT,,GaNFET2GaNHEMT5GaNGaN,GaN1991GaNLED,InGaNöAlGaNLEDInGaNGaNLEDLED,InGaNIn,LED,2cd6cdGaNLEDLEDLED3(SQW)MBE,InGaNSQWInGaNSQWGaAlNLED,LEDË,GaInN2136419998©1995-2004TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.LED,LDLED,LED,2000LD,3LEDËp,ËLEDËLEDLDNichia,1993,1cdGaInNöAlGaNLED,4ZnGaInN4InGaNöAlGaNLED,217%,450nm,1994,LED310mW,30nm,2cd1995,Nichia210mW,6cdGaNLED,525nm,40nm,NichiaLED,,6500K,715öWNichia,HP,CreeLEDHP1997111cdGaInNLED,475nm,114ö(SAIT)LED1999LEDLED525~InGaNö100AGaNMQW470nmLED525nmLEDLED19983186200310LED,,,DVD,,GaN(CW),InGaN(MQW)LD,417nm,LDLD,ËLED,ËLD1996,NichiaGaNLD,1996,GaNLDCWNichiaGaNLD,GaNLD2mW10000LD,ËLDHP,3136419998©1995-2004TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.GaInNöAlGaNLD,80mW,SDL1998GaNLD,,,,81512kAöcm2,395408nm,Nichia,150mWFujitsuCreeSiC,ËLD,5FujitsuGaN20mW,414nmCree19972SiC,GaNLD,GaNLDCW,2000LD,HP100000,10GaNLD5GaNLDGaNLED,SiCSiCGaNCreeResearchSiCCWRT,SiC,GaN,SiC,,CreeCW6H2SiC100nm,500nm1100,(1100)p25(300ns,1kHz),84mA1210V,516kAöcm2,SiCInGaNCW,115mA1015V40812nm40Nichia,CreeResearch,InGaN,CWSiC,(pn)CW,GaN,369nm,SiGaNGaNöAlGaN,80%GaN61998LED7,2005LEDLED1ö8,1ö2,50100LED,GaNMURI,GaN,GaN,(34)4136419998©1995-2004TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.3MPM[5](19931998)(19982003)(20032008)(100)4öSLW232440ö:160320MPMSLW232,440ö,:(116312)104MPMSLQ254,,6400ö;SLQ232,,1600ö:(018312)104MPMö:1000MPM:112104MPM:112104MPM:50100MPM:50100MPM:50100MPMö:105MPM:105106MPM:106107MPMö:1104MPM:(110)104MPM:(110)105MPM5,,MPM,,1AbramsRHJr.Themicrowavepowermodule:Asupercomponentforradartransmitters.Recordofthe1994IEEENationalRadarConference,1994;12AbramsRHJr.ParkerRK.IntroductiontotheMPM:whatitisandwhereitmightfit.1993IEEEMTT2sDigest,1993;1:1073SmithCR.Powermoduletechnologyforthe21stcentury.ProceedingoftheIEEE1995NationalAerospaceandElectronicsConference,1995;1:1064BreesA,DohlerG,DuthieJetal.Microwavepowermo2dule(MPM)developmentandresults.IEDM,1993;1455CosbyL.MPMapplication:Aforecastofnear2and2long2termapplications.1993IEEEMTT2sDigest,1993;1:111,1969,1990,DSP(14)GaNLEDLD,GaN,GaNFET,GaNLED,30%,GaNLED,,GaN44%,,2006GaN30,GaN20%,6LEDLED6GaN,GaN,4336419998©1995-2004TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.