bjt_model参数解释

第1页共9页附件A、三极管的Pspice模型参数.ModelmodelnameNPN(PNP、LPNP)[modelparameters]模型参数含义单位默认值备注AFflickernoiseexponent1.0噪声指数BFidealmaximumforwardbeta100.0最大正向放大倍数BRidealmaximumreversebeta1.0最大反向放大倍数CJCbase-collectorzero-biasp-ncapacitancefarad0.0集电结电容CJEbase-emitterzero-biasp-ncapacitancefarad0.0发射结电容CJS(CCS)Substratezero-biasp-ncapacitancefarad0.0EGbandgapvoltage(barrierheight)eV1.11FCforward-biasdepletioncapacitorcoefficient0.5GAMMAepitaxialregiondopingfactor1E-11IKF(IK)cornerforforward-betahigh-currentroll-offampinfiniteIKRcornerforreverse-betahigh-currentroll-offampinfiniteIRBcurrentatwhichRbfallshalfwaytoampinfiniteIStransportsaturationcurrentamp1E-16饱和电流ISC(C4)base-collectorleakagesaturationcurrentamp0.0集电结漏电流ISE(C2)base-emitterleakagesaturationcurrentamp0.0发射结漏电流ISSsubstratep-nsaturationcurrentamp0.0ITFtransittimedependencyonIcamp0.0KFflickernoisecoefficient0.0噪声系数MJC(MC)base-collectorp-ngradingfactor0.33MJE(ME)base-emitterp-ngradingfactor0.33MJS(MS)substratep-ngradingfactor0.0NCbase-collectorleakageemissioncoefficient2.0集电结漏电系数NEbase-emitterleakageemissioncoefficient1.5发射结漏电系数NFforwardcurrentemissioncoefficient1.0正向电流系数NKhigh-currentroll-offcoefficient0.5NRreversecurrentemissioncoefficient1.0NSsubstratep-nemissioncoefficient1.0第2页共9页PTFexcessphase@1/(2•TF)Hzdegree0.0QCOepitaxialregionchargefactorcoulomb0.0RBzero-bias(maximum)baseresistanceohm0.0最大基极电阻RBMminimumbaseresistanceohmRB最小基极电阻RCcollectorohmicresistanceohm0.0RCOepitaxialregionresistanceohm0.0REemitterohmicresistanceohm0.0TFidealforwardtransittimesec0.0正向传递时间TRidealreversetransittimesec0.0反向传递时间TRB1RBtemperaturecoefficient(linear)0C-10.0RB的温度系数TRB2RBtemperaturecoefficient(quadratic)0C-20.0TRC1RCtemperaturecoefficient(linear)0C-10.0TRC2RCtemperaturecoefficient(quadratic)0C-20.0TRE1REtemperaturecoefficient(linear)0C-10.0TRE2REtemperaturecoefficient(quadratic)0C-20.0TRM1RBMtemperaturecoefficient(linear)0C-10.0TRM2RBMtemperaturecoefficient(quadratic)0C-20.0T_ABSabsolutetemperature0CT_MEASUREDmeasuredtemperature0CT_REL_GLOBALrelativetocurrenttemperature0CT_REL_LOCALrelativetoAKOmodeltemperature0CVAF(VA)forwardEarlyvoltagevoltinfiniteVAR(VB)reverseEarlyvoltagevoltinfiniteVJC(PC)base-collectorbuilt-inpotentialvolt0.75VJE(PE)base-emitterbuilt-inpotentialvolt0.75VJS(PS)substratep-nbuilt-inpotentialvolt0.75VOcarriermobilitykneevoltagevolt10.0VTFtransittimedependencyonVbcvoltinfiniteXCJCfractionofCJCconnectedinternallytoRb1.0XCJC2fractionofCJCconnectedinternallytoRb1.0XTBforwardandreversebetatemperaturecoefficient0.0正向和反向放大倍数的温度影响系数XTFtransittimebiasdependencecoefficient0.0传递时间系数XTI(PT)IStemperatureeffectexponent3.0IS的温度影响系数第3页共9页附件B、PSpiceGoalFunction特征函数功能说明Bandwidth(1,db_level)计算波形1从最大值下降db_leveldb的波形宽度。BPBW(1,db_level)SameasBandwidth(1,db_level)CenterFreq(1,db_level)计算波形1从最大值下降db_leveldb的两点的中心频率。Falltime(1)计算波形1的下降时间。GainMargin(1,2)计算波形1的相位为-180。时，波形2的分贝值。GenFall(1)类似于Falltime(1)，但它的下降时间相对的y轴是起点于终点，而不是最大值与最小值。GenRise(1)与GenFall(1)类似，只是它是上升时间。HPBW(1,db_level)查找第一次比最大值低db_leveldb的x坐标。（上升沿）LPBW(1,db_level)与HPBW类似，只是用于下降沿。Maxr(1,begin-x,end-x)查找区间的最大值。Overshoot(1)计算最大值与终点之间y轴坐标差与终点值的百分比。Peak(1,n_occur)查找第n-occur个峰值点的Y值Period(1)计算波形1的周期。PhaseMargin(1,2)查找波形1在0分贝时波形2的相位。Pulsewidth(1)计算波形1的脉冲宽度。Risetime(1)计算波形1的上升时间。Swingr(1,begin-x,end-x)计算在指定范围内，波形1的最大值与最小值之差。TPmW2(1,Period)XatNthy(1,Y-value,n-occur)查找波形1上第n-occur个Y-value值时的X坐标值。XatNthYn(1,Y_value,n_occur)与XatNthy类似，但它查找的Y值必须在下降沿上。XatNthYp(1,Y_value,n_occur)与XatNthy类似，但它查找的Y值必须在上升沿上。XatNthYpct(1,Y_PCT,n_occur)查找第n-occur个Y轴值为Y轴范围的Y_pct%时的X轴值。YatX(1,X_value)查找X-value值处的Y值。YatXpct(1,X_pct)查找X轴值为X轴范围的X_pct%时的Y轴值。第4页共9页附件CModelingvoltage-controlledandtemperature-dependentresistorsAnalogBehavioralModeling(ABM)canbeusedtomodelanonlinearresistorthroughuseofOhm抯lawandtablesandexpressionswhichdescriberesistance.Herearesomeexamples.Voltage-controlledresistorIfaResistancevs.Voltagecurveisavailable,alook-uptablecanbeusedintheABMexpression.Thistablecontains(Voltage,Resistance)pairspickedfrompointsonthecurve.Thevoltageinputisnonlinearlymappedfromthevoltagevaluesinthetabletotheresistancevalues.Linearinterpolationisusedbetweentablevalues.Let抯saythatpointspickedfromaResistancevs.Voltagecurveare:VoltageResistance0.5251.0502.0100TheABMexpressionforthisisshowninFigure1.第5页共9页Figure1-Voltagecontrolledresistorusinglook-uptableTemperature-dependentresistorAtemperature-dependentresistor(orthermistor)canbemodeledwithalook-uptable,oranexpressioncanbeusedtodescribehowtheresistancevarieswithtemperature.ThedenominatorintheexpressioninFigure2isusedtodescribecommonthermistors.TheTEMPvariableintheexpressionisthesimulationtemperature,inCelsius.ThisisthenconvertedtoKelvinbyadding273.15.Thisstepisnecessarytoavoidadividebyzeroprobleminthedenominator,whenT=0C.NOTE:TEMPcanonlybeusedinABMexpressions(E,Gdevices).Figure3showstheresultsofaDCsweepoftemperaturefrom-40to60C.They-axisshowstheresistanceorV(I1:-)/1A.Figure2-Temperaturecontrolledresistor第6页共9页Figure3-PSpiceplotofResistancevs.Temperature(current=1A)VariableQRLCnetworkInmostcircuitsthevalueofaresis