TC4452

©2006MicrochipTechnologyInc.DS21987A-page1TC4451/TC4452Features•HighPeakOutputCurrent:13A(typ.)•LowShoot-Through/Cross-ConductionCurrentinOutputStage•WideInputSupplyVoltageOperatingRange:-4.5Vto18V•HighContinuousOutputCurrent:2.6A(max.)•MatchedFastRiseandFallTimes:-21nswith10,000pFLoad-42nswith22,000pFLoad•MatchedShortPropagationDelays:44ns(typ.)•LowSupplyCurrent:-WithLogic‘1’Input–140μA(typ.)-WithLogic‘0’Input–40μA(typ.)•LowOutputImpedance:0.9Ω(typ.)•Latch-UpProtected:WillWithstand1.5AOutputReverseCurrent•InputWillWithstandNegativeInputsUpTo5V•Pin-CompatiblewiththeTC4420/TC4429,TC4421/TC4422andTC4421A/TC4422AMOSFETDrivers•Space-Saving,Thermally-Enhanced,8-PinDFNPackageApplications•LineDriversforExtraHeavily-LoadedLines•PulseGenerators•DrivingtheLargestMOSFETsandIGBTs•LocalPowerON/OFFSwitch•MotorandSolenoidDriver•LFInitiatorGeneralDescriptionTheTC4451/TC4452aresingle-outputMOSFETdrivers.Thesedevicesarehigh-currentbuffer/driverscapableofdrivinglargeMOSFETsandInsulatedGateBipolarTransistors(IGBTs).TheTC4451/TC4452havematchedoutputriseandfalltimes,aswellasmatchedleadingandfalling-edgepropagationdelaytimes.TheTC4451/TC4452devicesalsohaveverylowcross-conductioncurrent,reducingtheoverallpowerdissipationofthedevice.Thesedevicesareessentiallyimmunetoanyformofupset,exceptdirectovervoltageorover-dissipation.Theycannotbelatchedunderanyconditionswithintheirpowerandvoltageratings.Thesepartsarenotsubjecttodamageorimproperoperationwhenupto5Vofgroundbounceispresentontheirgroundterminals.Theycanaccept,withoutdamageorlogicupset,morethan1.5Ainductivecurrentofeitherpolaritybeingforcedbackintotheiroutputs.Inaddition,allterminalsarefullyprotectedagainstupto4kVofelectrostaticdischarge.TheTC4451/TC4452inputsmaybedrivendirectlyfromeitherTTLorCMOS(3Vto18V).Inaddition,300mVofhysteresisisbuiltintotheinput,providingnoiseimmunityandallowingthedevicetobedrivenfromslowlyrisingorfallingwaveforms.Withbothsurface-mountandpin-through-holepackages,inadditiontoawideoperatingtemperaturerange,theTC4451/TC4452familyof12AMOSFETdriversfitintomostanyapplicationwherehighgate/linecapacitancedriveisrequired.12AHigh-SpeedMOSFETDriversTC4451/TC4452DS21987A-page2©2006MicrochipTechnologyInc.PackageTypes(1)FunctionalBlockDiagram8-Pin1234VDD5678OUTPUTGNDVDDINPUTNCGNDOUTPUTTC4451TC44525-PinTO-220VDDGNDINPUTGNDOUTPUTTC4451TC4452TabisCommontoVDDNote1:Duplicatepinsmustbothbeconnectedforproperoperation.2:ExposedpadoftheDFNpackageiselectricallyisolated.TC4451TC4452VDDOUTPUTGNDOUTPUTPDIP/SOIC8-PinDFN(2)VDDINPUTNCGND23456781TC4451TC4452VDDOUTPUTGNDOUTPUTTC4451TC4452VDDOUTPUTGNDOUTPUTEffectiveInputOutputInputGNDVDD300mV4.7VTC4451C=25pFTC4452InvertingNon-Inverting140μACross-ConductionReductionandPre-DriveCircuitryOutput©2006MicrochipTechnologyInc.DS21987A-page3TC4451/TC44521.0ELECTRICALCHARACTERISTICSAbsoluteMaximumRatings†SupplyVoltage.....................................................+20VInputVoltage....................(VDD+0.3V)to(GND–5V)InputCurrent(VINVDD)...................................50mA†Stressesabovethoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.Thesearestressratingsonlyandfunctionaloperationofthedeviceattheseoranyotherconditionsabovethoseindicatedintheoperationsectionsofthespecificationsisnotimplied.ExposuretoAbsoluteMaximumRatingconditionsforextendedperiodsmayaffectdevicereliability.DCCHARACTERISTICSElectricalSpecifications:Unlessotherwisenoted,TA=+25°Cwith4.5V≤VDD≤18V.ParametersSymMinTypMaxUnitsConditionsInputLogic‘1’,HighInputVoltageVIH2.41.5—VLogic‘0’,LowInputVoltageVIL—1.30.8VInputCurrentIIN–10—+10μA0V≤VIN≤VDDInputVoltageVIN–5—VDD+0.3VOutputHighOutputVoltageVOHVDD–0.025——VDCTestLowOutputVoltageVOL——0.025VDCTestOutputResistance,HighROH—1.01.5ΩIOUT=10mA,VDD=18VOutputResistance,LowROL—0.91.5ΩIOUT=10mA,VDD=18VPeakOutputCurrentIPK—13—AVDD=18VContinuousOutputCurrentIDC2.6——A10V≤VDD≤18V(Note2,Note3)Latch-UpProtectionWithstandReverseCurrentIREV—1.5—ADutycycle≤2%,t≤300μsSwitchingTime(Note1)RiseTimetR—3040nsFigure4-1,CL=15,000pFFallTimetF—3240nsFigure4-1,CL=15,000pFPropagationDelayTimetD1—4452nsFigure4-1,CL=15,000pFPropagationDelayTimetD2—4452nsFigure4-1,CL=15,000pFPowerSupplyPowerSupplyCurrentIS—140200μAVIN=3V—40100μAVIN=0VOperatingInputVoltageVDD4.5—18.0VNote1:Switchingtimesensuredbydesign.2:Testedduringcharacterization,notproductiontested.3:ValidforATandMFpackagesonly.TA=+25°C.TC4451/TC4452DS21987A-page4©2006MicrochipTechnologyInc.DCCHARACTERISTICS(OVEROPERATINGTEMPERATURERANGE)TEMPERATURECHARACTERISTICSElectricalSpecifications:Unlessotherwisenoted,overoperatingtemperaturerangewith4.5V≤VDD≤18V.ParametersSymMinTypMaxUnitsConditionsInputLogic‘1’,HighInputVoltageVIH2.4——VLogic‘0’,LowInputVoltageVIL——0.8VInputCurrentIIN–10—+10μA0V≤VIN≤VDDOutputHighOutputVoltageVOHVDD–0.025——VDCTestLowOutputVoltageVOL——0.025VDCTestOutputResistance,HighROH——2.2ΩIOUT=10mA,VDD=18VOutputResistance,LowROL——2.0ΩIOUT=10mA,VDD=18VSwitchingTime(Note1)RiseTimetR—3560nsFigure4-1,CL=15,000pFFallTimetF—3860nsFigure4-1,CL=15,000pFPropagationDelayTimetD1—5565nsF